Daniel Pardo

443 total citations
20 papers, 316 citations indexed

About

Daniel Pardo is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mathematical Physics. According to data from OpenAlex, Daniel Pardo has authored 20 papers receiving a total of 316 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 1 paper in Mathematical Physics. Recurrent topics in Daniel Pardo's work include Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (10 papers) and Semiconductor Quantum Structures and Devices (7 papers). Daniel Pardo is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (10 papers) and Semiconductor Quantum Structures and Devices (7 papers). Daniel Pardo collaborates with scholars based in Spain, France and Italy. Daniel Pardo's co-authors include T. González, J. Mateos, A. Cappy, L. Varani, B. G. Vasallo, Virginie Hoel, Lino Reggiani, L. Reggiani, Y. Roelens and Roc Berenguer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Daniel Pardo

19 papers receiving 302 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daniel Pardo Spain 10 283 184 44 24 22 20 316
W. Baechtold Switzerland 12 388 1.4× 207 1.1× 36 0.8× 26 1.1× 15 0.7× 35 415
W.O. Schlosser United States 11 427 1.5× 208 1.1× 58 1.3× 22 0.9× 9 0.4× 29 457
T. Fernández Spain 11 259 0.9× 61 0.3× 65 1.5× 31 1.3× 9 0.4× 42 287
Barry Perlman United States 10 258 0.9× 118 0.6× 28 0.6× 27 1.1× 4 0.2× 31 313
Yasutake Hirachi Japan 11 406 1.4× 105 0.6× 55 1.3× 9 0.4× 5 0.2× 56 419
George D. Vendelin United States 10 367 1.3× 65 0.4× 27 0.6× 46 1.9× 3 0.1× 27 383
Mizuki Motoyoshi Japan 13 607 2.1× 48 0.3× 21 0.5× 66 2.8× 15 0.7× 108 639
M.G. Stubbs Canada 12 518 1.8× 59 0.3× 15 0.3× 34 1.4× 4 0.2× 84 548
M. Weiß Germany 9 332 1.2× 106 0.6× 17 0.4× 13 0.5× 5 0.2× 24 347
Hyoung-Jun Kim South Korea 13 505 1.8× 291 1.6× 7 0.2× 17 0.7× 14 0.6× 48 524

Countries citing papers authored by Daniel Pardo

Since Specialization
Citations

This map shows the geographic impact of Daniel Pardo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel Pardo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel Pardo more than expected).

Fields of papers citing papers by Daniel Pardo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel Pardo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel Pardo. The network helps show where Daniel Pardo may publish in the future.

Co-authorship network of co-authors of Daniel Pardo

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel Pardo. A scholar is included among the top collaborators of Daniel Pardo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel Pardo. Daniel Pardo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pardo, Daniel, José Valero, & Ángel Giménez. (2018). Global attractors for weak solutions of the three-dimensional Navier-Stokes equations with damping. Discrete and Continuous Dynamical Systems - B. 24(8). 3569–3590. 6 indexed citations
2.
Vasallo, B. G., S. Bollaert, Yannick Roelens, et al.. (2009). Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor. Applied Physics Letters. 94(10).
3.
Vasallo, B. G., Yannick Roelens, A. Cappy, et al.. (2008). Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs. IEEE Transactions on Electron Devices. 55(6). 1535–1540. 18 indexed citations
4.
Vasallo, B. G., Y. Roelens, A. Cappy, et al.. (2007). Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs. IEEE Transactions on Electron Devices. 54(11). 2815–2822. 50 indexed citations
5.
Pardo, Daniel, et al.. (2007). Design Criteria for Full Passive Long Range UHF RFID Sensor for Human Body Temperature Monitoring. Acceda (Universidad de Las Palmas de Gran Canaria). 141–148. 36 indexed citations
6.
González, T., J. Mateos, & Daniel Pardo. (2005). 18th International Conference on Noise and Fluctuations. CERN Document Server (European Organization for Nuclear Research). 780. 2 indexed citations
7.
Rengel, Raúl, Daniel Pardo, & María J. Martín. (2004). Influence of 2D electrostatic effects on the high-frequency noise behavior of sub-100-nm scaled MOSFETs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5470. 96–96. 3 indexed citations
8.
Rengel, Raúl, Daniel Pardo, & María J. Martín. (2004). Towards the nanoscale: influence of scaling on the electronic transport and small-signal behaviour of MOSFETs. Nanotechnology. 15(4). S276–S282. 4 indexed citations
9.
Rengel, Raúl, J. Mateos, Daniel Pardo, et al.. (2003). High-frequency noise in FDSOI MOSFETs: a Monte Carlo investigation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5113. 379–379. 2 indexed citations
10.
Mateos, J., T. González, Daniel Pardo, Virginie Hoel, & A. Cappy. (2001). Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs. Microelectronics Reliability. 41(1). 73–77. 3 indexed citations
11.
Mateos, J., T. González, Daniel Pardo, Virginie Hoel, & A. Cappy. (1999). Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis. Semiconductor Science and Technology. 14(9). 864–870. 40 indexed citations
12.
Mateos, J., et al.. (1998). Discussion. Solid-State Electronics. 42(1). 79–85. 13 indexed citations
13.
González, T., Daniel Pardo, L. Reggiani, & L. Varani. (1997). Microscopic analysis of electron noise in GaAs Schottky barrier diodes. Journal of Applied Physics. 82(5). 2349–2358. 26 indexed citations
14.
Mateos, J., et al.. (1996). Influence of Real-Space Transfer on Transit Time and Noise in HEMTs. 3 indexed citations
15.
González, T. & Daniel Pardo. (1996). Physical models of ohmic contact for Monte Carlo device simulation. Solid-State Electronics. 39(4). 555–562. 55 indexed citations
16.
Mateos, J., T. González, & Daniel Pardo. (1995). Influence of spatial correlations on the analysis of diffusion noise in submicron semiconductor structures. Applied Physics Letters. 67(5). 685–687. 11 indexed citations
17.
Mateos, J., T. González, & Daniel Pardo. (1995). Spatial extent of the correlation between local diffusion noise sources in GaAs. Journal of Applied Physics. 77(4). 1564–1568. 9 indexed citations
18.
Varani, L., Lino Reggiani, T. Kühn, et al.. (1993). Number and current fluctuations in submicron semiconductor structures. AIP conference proceedings. 285. 329–332. 1 indexed citations
19.
González, T., Daniel Pardo, L. Varani, & Lino Reggiani. (1993). Spatial analysis of electronic noise in submicron semiconductor structures. Applied Physics Letters. 63(1). 84–86. 13 indexed citations
20.
González, T., Daniel Pardo, L. Varani, & Lino Reggiani. (1993). Monte Carlo analysis of noise spectra in Schottky-barrier diodes. Applied Physics Letters. 63(22). 3040–3042. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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