E. Constant

1.6k total citations
75 papers, 1.1k citations indexed

About

E. Constant is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, E. Constant has authored 75 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 48 papers in Atomic and Molecular Physics, and Optics and 10 papers in Condensed Matter Physics. Recurrent topics in E. Constant's work include Semiconductor Quantum Structures and Devices (32 papers), Semiconductor materials and devices (24 papers) and Advancements in Semiconductor Devices and Circuit Design (23 papers). E. Constant is often cited by papers focused on Semiconductor Quantum Structures and Devices (32 papers), Semiconductor materials and devices (24 papers) and Advancements in Semiconductor Devices and Circuit Design (23 papers). E. Constant collaborates with scholars based in France, Italy and Ireland. E. Constant's co-authors include J. Zimmermann, G. Salmer, A. Cappy, R. Fauquembergue, Y. Leroy, P.A. Rolland, J. Chevallier, M. Constant, D. Gasquet and J. P. Nougier and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

E. Constant

72 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Constant France	19	809	648	149	129	97	75	1.1k
Luis R. Elias United States	19	1.5k 1.9×	1.2k 1.8×	228 1.5×	57 0.4×	132 1.4×	75	1.9k
R. C. Hart United States	18	279 0.3×	546 0.8×	272 1.8×	32 0.2×	65 0.7×	51	860
N. I. Agladze United States	10	166 0.2×	424 0.7×	252 1.7×	175 1.4×	43 0.4×	38	783
S. M. Hamberger United Kingdom	17	368 0.5×	365 0.6×	78 0.5×	33 0.3×	45 0.5×	40	1.1k
P. P. J. M. Schram Netherlands	15	200 0.2×	469 0.7×	281 1.9×	45 0.3×	92 0.9×	69	921
D. Van Vechten United States	15	232 0.3×	189 0.3×	219 1.5×	264 2.0×	52 0.5×	55	707
Scott R. Bickham United States	18	1.0k 1.2×	545 0.8×	256 1.7×	54 0.4×	53 0.5×	67	1.5k
W. A. Miller United States	11	187 0.2×	381 0.6×	96 0.6×	63 0.5×	54 0.6×	26	664
R. G. Storer Australia	12	131 0.2×	322 0.5×	100 0.7×	51 0.4×	91 0.9×	47	722
F. DeRosa United States	20	628 0.8×	1.1k 1.8×	272 1.8×	412 3.2×	65 0.7×	46	1.4k

Countries citing papers authored by E. Constant

Since Specialization

Citations

This map shows the geographic impact of E. Constant's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Constant with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Constant more than expected).

Fields of papers citing papers by E. Constant

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Constant. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Constant. The network helps show where E. Constant may publish in the future.

Co-authorship network of co-authors of E. Constant

This figure shows the co-authorship network connecting the top 25 collaborators of E. Constant. A scholar is included among the top collaborators of E. Constant based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Constant. E. Constant is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Farah, J., Ludovic De Marzi, S. Delacroix, et al.. (2016). Benchmarking Monte Carlo simulations against experimental data in clinically relevant passive scattering proton therapy beamline configurations. Radioprotection. 51(2). 113–122. 6 indexed citations

Barbé, M., F. Bailly, J. Chevallier, et al.. (2002). Photo-induced Dissociation and Optical Cross Section of Si-H and S-H Complexes in GaAs and AlGaAs. MRS Proceedings. 719. 1 indexed citations

Constant, E., et al.. (1999). Isotope effect on the reactivation of neutralized Si dopants in hydrogenated or deuterated GaAs: The role of hot electrons. Journal of Applied Physics. 85(9). 6526–6529. 9 indexed citations

Constant, E., et al.. (1991). Hydrogen solubility in n-type silicon doped GaAs and its effects on the material electronic quality. Journal of Applied Physics. 69(3). 1345–1349. 5 indexed citations

Constant, E., et al.. (1989). Méthode générale de modélisation du transistor à effet de champ à hétérojonction. Revue de Physique Appliquée. 24(2). 151–170. 1 indexed citations

Constant, E., et al.. (1988). Realisation of very high transconductance GaAs MESFETs. Electronics Letters. 24(13). 775–776. 1 indexed citations

Constant, E., et al.. (1986). Monolithic microwave FET oscillator temperature-stabilised with a Schottky diode as a sensor. Electronics Letters. 22(3). 122–123. 1 indexed citations

Zimmermann, J., et al.. (1985). Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices. Solid-State Electronics. 28(8). 733–740. 23 indexed citations

Fauquembergue, R., et al.. (1985). Two dimensional Monte Carlo simulation of an injection modulated M.I.S.F.E.T. structure. Physica B+C. 129(1-3). 563–567. 3 indexed citations

10.

Lippens, D., et al.. (1985). Multi-layered heterojunction structure for millimeter-wave impatt devices. Physica B+C. 134(1-3). 72–76. 3 indexed citations

11.

Zimmermann, J., et al.. (1984). A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices. physica status solidi (a). 81(2). 569–577. 3 indexed citations

12.

Salmer, G., et al.. (1982). Influence of gate intervals on the behaviour of submicron dual-gate FETs. Electronics Letters. 18(18). 791–793. 3 indexed citations

13.

Lippens, D., et al.. (1982). Simulation of non steady-state transport in GaAs and InP millimeter Impatt diodes. IEEE Electron Device Letters. 3(7). 213–215. 7 indexed citations

14.

Rolland, P.A., et al.. (1981). THEORETICAL STUDY OF 100 GHz GaAs TRANSFERRED-ELECTRON DEVICES. SPIRE - Sciences Po Institutional REpository. 42(C7). C7–171. 9 indexed citations

15.

Cappy, A., et al.. (1981). Noise modeling in submicrometer-gate FET's. IEEE Transactions on Electron Devices. 28(7). 784–789. 35 indexed citations

16.

Constant, E., et al.. (1981). NON STEADY STATE CARRIER TRANSPORT IN SEMICONDUCTOR, APLICATION TO THE MODELLING OF SUBMICRON DEVICES. Le Journal de Physique Colloques. 42(C7). C7–73. 2 indexed citations

17.

Zimmermann, J., et al.. (1980). Electron dynamics in P -Si m.o.s.f.e.t. inversion channels. Electronics Letters. 16(17). 664–666. 5 indexed citations

18.

Constant, E., et al.. (1976). Gunn diode, avalanche diode, and baritt microwave amplifiers. 56. 349–357. 1 indexed citations

19.

Constant, E., et al.. (1974). Value of electron diffusion constant in GaAs for high electric field. Applied Physics Letters. 25(12). 721–723. 3 indexed citations

20.

Constant, E., et al.. (1970). Transit-time operation of an avalanche diode driven by a subharmonic signal and its application to frequency multiplication. Proceedings of the IEEE. 58(3). 483–484. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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