M. Boukerche

589 total citations
21 papers, 433 citations indexed

About

M. Boukerche is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Boukerche has authored 21 papers receiving a total of 433 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in M. Boukerche's work include Advanced Semiconductor Detectors and Materials (20 papers), Semiconductor Quantum Structures and Devices (18 papers) and Chalcogenide Semiconductor Thin Films (12 papers). M. Boukerche is often cited by papers focused on Advanced Semiconductor Detectors and Materials (20 papers), Semiconductor Quantum Structures and Devices (18 papers) and Chalcogenide Semiconductor Thin Films (12 papers). M. Boukerche collaborates with scholars based in United States. M. Boukerche's co-authors include J. P. Faurie, J. P. Faurie, S. Sivananthan, I. K. Sou, J. Reno, P. S. Wijewarnasuriya, S. Sivananthan, R. Sporken, C. Hsu and J. L. Reno and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

M. Boukerche

21 papers receiving 411 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Boukerche United States	14	421	304	126	20	20	21	433
Ronald D. Graft United States	9	247 0.6×	199 0.7×	57 0.5×	15 0.8×	11 0.6×	20	334
T. Colin Norway	12	251 0.6×	266 0.9×	127 1.0×	13 0.7×	12 0.6×	22	361
D. K. Blanks United States	15	561 1.3×	437 1.4×	221 1.8×	7 0.3×	31 1.6×	24	639
Y.–H. Zhang United States	11	309 0.7×	291 1.0×	113 0.9×	15 0.8×	28 1.4×	33	385
E. R. Youngdale United States	9	386 0.9×	353 1.2×	83 0.7×	40 2.0×	17 0.8×	20	436
E. Ahlswede Germany	9	378 0.9×	426 1.4×	83 0.7×	29 1.4×	19 0.9×	10	461
B. Jensen United States	10	233 0.6×	224 0.7×	90 0.7×	4 0.2×	33 1.6×	22	308
Jarosław Wróbel Poland	11	309 0.7×	202 0.7×	101 0.8×	68 3.4×	36 1.8×	34	364
Jason Machan United States	9	298 0.7×	225 0.7×	56 0.4×	9 0.5×	20 1.0×	20	342
Hubert Vollmer United States	9	154 0.4×	130 0.4×	34 0.3×	10 0.5×	19 0.9×	24	206

Countries citing papers authored by M. Boukerche

Since Specialization

Citations

This map shows the geographic impact of M. Boukerche's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Boukerche with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Boukerche more than expected).

Fields of papers citing papers by M. Boukerche

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Boukerche. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Boukerche. The network helps show where M. Boukerche may publish in the future.

Co-authorship network of co-authors of M. Boukerche

This figure shows the co-authorship network connecting the top 25 collaborators of M. Boukerche. A scholar is included among the top collaborators of M. Boukerche based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Boukerche. M. Boukerche is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Wijewarnasuriya, P. S., M. Boukerche, & J. P. Faurie. (1990). High-quality p-type HgCdTe grown by molecular beam epitaxy. Journal of Applied Physics. 67(2). 859–862. 15 indexed citations

Boukerche, M., et al.. (1990). The spreading resistance technique applied to mercury cadmium telluride heterojunctions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 8(2). 1233–1236. 1 indexed citations

Sou, I. K., P. S. Wijewarnasuriya, M. Boukerche, & J. P. Faurie. (1989). Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy. Applied Physics Letters. 55(10). 954–956. 5 indexed citations

Sporken, R., et al.. (1989). Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100). Applied Physics Letters. 55(18). 1879–1881. 91 indexed citations

Boukerche, M., et al.. (1989). Planar Heterojunctions Made On MBE Grown Mercury Cadmium Telluride Using Low Energy Ion Sputtering. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1106. 172–172. 1 indexed citations

Boukerche, M., S. Sivananthan, P. S. Wijewarnasuriya, I. K. Sou, & J. P. Faurie. (1989). Electrical properties of intrinsic p-type shallow levels in HgCdTe grown by molecular-beam epitaxy in the (111)B orientation. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(2). 311–313. 14 indexed citations

Boukerche, M., et al.. (1988). The doping of mercury cadmium telluride grown by molecular‐beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(4). 2830–2833. 40 indexed citations

Boukerche, M., et al.. (1988). Mercury cadmium telluride junctions grown in situ by molecular‐beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(4). 2623–2626. 7 indexed citations

Wijewarnasuriya, P. S., et al.. (1987). Electrical properties of Li-doped Hg1−xCdxTe(100) by molecular beam epitaxy. Applied Physics Letters. 51(24). 2025–2027. 27 indexed citations

10.

Boukerche, M., et al.. (1987). Mercury cadmium telluride n-isotype heterojunctions grown i n s i t u by molecular-beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 5(5). 3119–3123. 1 indexed citations

11.

Boukerche, M., P. S. Wijewarnasuriya, J. Reno, I. K. Sou, & J. P. Faurie. (1986). Electrical properties of molecular beam epitaxy produced HgCdTe layers doped during growth. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(4). 2072–2076. 16 indexed citations

12.

Faurie, J. P., J. L. Reno, S. Sivananthan, et al.. (1986). Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100). Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(2). 585–589. 23 indexed citations

13.

Faurie, J. P., J. Reno, S. Sivananthan, et al.. (1986). Molecular beam epitaxial growth and characterization of HgCdTe, HgZnTe, and HgMnTe on GaAs(100). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(4). 2067–2071. 16 indexed citations

14.

Boukerche, M., J. Reno, I. K. Sou, C. Hsu, & J. P. Faurie. (1986). Indium doping of HgCdTe layers during growth by molecular beam epitaxy. Applied Physics Letters. 48(25). 1733–1735. 21 indexed citations

15.

Raccah, P. M., J. W. Garland, J. Reno, et al.. (1986). Hall and electroreflectance studies of the effects of doping in mercury–cadmium telluride grown by molecular-beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(4). 2077–2080. 9 indexed citations

16.

Faurie, J. P., et al.. (1985). Molecular beam epitaxy of alloys and superlattices involving mercury. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 3(1). 55–59. 21 indexed citations

17.

Sivananthan, S., Xiangfeng Chu, M. Boukerche, & J. P. Faurie. (1985). Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrate. Applied Physics Letters. 47(12). 1291–1293. 18 indexed citations

18.

Faurie, J. P., M. Boukerche, S. Sivananthan, J. Reno, & C. Hsu. (1985). HgTe/CdTe superlattices grown by molecular beam epitaxy. Superlattices and Microstructures. 1(3). 237–244. 27 indexed citations

19.

Faurie, J. P., J. Reno, & M. Boukerche. (1985). II–VI semiconductor compounds: New superlattice systems for the future?. Journal of Crystal Growth. 72(1-2). 111–116. 11 indexed citations

20.

Faurie, J. P., S. Sivananthan, M. Boukerche, & J. Reno. (1984). Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substrates. Applied Physics Letters. 45(12). 1307–1309. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact