J. Gebauer

1.1k total citations
43 papers, 888 citations indexed

About

J. Gebauer is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Gebauer has authored 43 papers receiving a total of 888 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 26 papers in Mechanics of Materials and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Gebauer's work include Semiconductor materials and devices (28 papers), Muon and positron interactions and applications (25 papers) and Semiconductor materials and interfaces (9 papers). J. Gebauer is often cited by papers focused on Semiconductor materials and devices (28 papers), Muon and positron interactions and applications (25 papers) and Semiconductor materials and interfaces (9 papers). J. Gebauer collaborates with scholars based in Germany, United States and Finland. J. Gebauer's co-authors include R. Krause‐Rehberg, E. R. Weber, M. Luysberg, R. Armitage, Qing Yang, H. Feick, Ph. Ebert, S. Eichler, P. Specht and Hyunchul Sohn and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. Gebauer

41 papers receiving 846 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
J. Gebauer 545 389 347 275 258 43 888
P. Specht 515 0.9× 568 1.5× 390 1.1× 73 0.3× 269 1.0× 61 975
H. Glückler 164 0.3× 293 0.8× 203 0.6× 226 0.8× 547 2.1× 44 917
T. Morishita 232 0.4× 256 0.7× 613 1.8× 110 0.4× 581 2.3× 98 1.1k
V. N. Brudnyı̆ 522 1.0× 315 0.8× 313 0.9× 70 0.3× 119 0.5× 100 715
Hajime Ishikawa 830 1.5× 346 0.9× 307 0.9× 61 0.2× 579 2.2× 89 1.4k
D. J. Peterman 217 0.4× 525 1.3× 366 1.1× 55 0.2× 282 1.1× 37 838
Y. Fukaya 153 0.3× 532 1.4× 490 1.4× 364 1.3× 153 0.6× 73 892
T. Wosiński 897 1.6× 881 2.3× 534 1.5× 157 0.6× 557 2.2× 112 1.5k
E. R. Weber 622 1.1× 533 1.4× 336 1.0× 108 0.4× 338 1.3× 40 1.0k
P. Schäfer 424 0.8× 322 0.8× 636 1.8× 44 0.2× 113 0.4× 51 927

Countries citing papers authored by J. Gebauer

Since Specialization
Citations

This map shows the geographic impact of J. Gebauer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Gebauer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Gebauer more than expected).

Fields of papers citing papers by J. Gebauer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Gebauer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Gebauer. The network helps show where J. Gebauer may publish in the future.

Co-authorship network of co-authors of J. Gebauer

This figure shows the co-authorship network connecting the top 25 collaborators of J. Gebauer. A scholar is included among the top collaborators of J. Gebauer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Gebauer. J. Gebauer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Contreras, Francisca, Mariia Vorobii, Marisa P. Sárria, et al.. (2025). Surface-confined enzymatic method for scalable thin film generation. Surfaces and Interfaces. 60. 106046–106046.
2.
Fischer, Inga Anita, et al.. (2013). Ferromagnetic Mn5Ge3C0.8contacts on Ge: work function and specific contact resistivity. Semiconductor Science and Technology. 28(12). 125002–125002. 8 indexed citations
3.
Elsayed, Mohamed, et al.. (2008). Vacancy generation during Cu diffusion in GaAs. Journal of Applied Physics. 104(10). 10 indexed citations
4.
Staab, Torsten E.M., R. M. Nieminen, M. Luysberg, J. Gebauer, & Thomas Frauenheim. (2003). Strain relaxation in LT-GaAs by the agglomeration of As antisites. Physica B Condensed Matter. 340-342. 293–298. 6 indexed citations
5.
Armitage, R., Qing Yang, H. Feick, et al.. (2002). Lattice-matched HfN buffer layers for epitaxy of GaN on Si. Applied Physics Letters. 81(8). 1450–1452. 55 indexed citations
6.
Staab, Torsten E.M., R. M. Nieminen, J. Gebauer, et al.. (2001). Do Arsenic Interstitials Really Exist in As-Rich GaAs?. Physical Review Letters. 87(4). 45504–45504. 34 indexed citations
7.
Gebauer, J., et al.. (2001). Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs. Materials science forum. 363-365. 111–113. 2 indexed citations
8.
Quadbeck, Peter, Ph. Ebert, Karsten Urban, J. Gebauer, & R. Krause‐Rehberg. (2000). Effect of dopant atoms on the roughness of III–V semiconductor cleavage surfaces. Applied Physics Letters. 76(3). 300–302. 12 indexed citations
9.
Gebauer, J., R. Krause‐Rehberg, S. Eichler, & F. Börner. (1999). Doppler broadening spectroscopy using the FAST-ComTec two-dimensional coincidence system: a case study. Applied Surface Science. 149(1-4). 110–115. 16 indexed citations
10.
Gebauer, J., et al.. (1999). On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon. Applied Physics A. 68(4). 411–416. 25 indexed citations
11.
Börner, F., J. Gebauer, S. Eichler, et al.. (1999). Defects in CuIn(Ga)Se2 solar cell material characterized by positron annihilation: post-growth annealing effects. Physica B Condensed Matter. 273-274. 930–933. 3 indexed citations
12.
Gebauer, J., et al.. (1999). Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs. Physical review. B, Condensed matter. 60(3). 1464–1467. 29 indexed citations
13.
Specht, P., Rui Zhao, F. Börner, et al.. (1999). Native point defect analysis in non-stoichiometric GaAs: an annealing study. Physica B Condensed Matter. 273-274. 722–724. 8 indexed citations
14.
Gebauer, J., et al.. (1999). Influence of stoichiometry and doping on vacancies in n-type GaAs. Physica B Condensed Matter. 273-274. 705–709. 4 indexed citations
15.
Gebauer, J., R. Krause‐Rehberg, S. Eichler, et al.. (1997). Ga vacancies in low-temperature-grown GaAs identified by slow positrons. Applied Physics Letters. 71(5). 638–640. 60 indexed citations
16.
Eichler, S., J. Gebauer, F. Börner, et al.. (1997). Defects in silicon afterB+implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy. Physical review. B, Condensed matter. 56(3). 1393–1403. 40 indexed citations
17.
Gebauer, J., et al.. (1997). Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation. Materials science forum. 258-263. 905–910. 3 indexed citations
18.
Gebauer, J., R. Krause‐Rehberg, C. Domke, Ph. Ebert, & K. Urban. (1997). Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy [Phys. Rev. Lett. 78, 3334 (1997)]. Physical Review Letters. 79(5). 958–958. 1 indexed citations
19.
Gebauer, J., R. Krause‐Rehberg, C. Domke, Ph. Ebert, & K. Urban. (1997). Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy. Physical Review Letters. 78(17). 3334–3337. 60 indexed citations
20.
Gebauer, J., R. Krause‐Rehberg, S. Eichler, et al.. (1997). Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons. Materials science forum. 255-257. 204–208. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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