S. Eichler

693 total citations
40 papers, 557 citations indexed

About

S. Eichler is a scholar working on Mechanics of Materials, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, S. Eichler has authored 40 papers receiving a total of 557 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Mechanics of Materials, 22 papers in Electrical and Electronic Engineering and 20 papers in Materials Chemistry. Recurrent topics in S. Eichler's work include Muon and positron interactions and applications (19 papers), Graphene research and applications (10 papers) and Semiconductor materials and devices (10 papers). S. Eichler is often cited by papers focused on Muon and positron interactions and applications (19 papers), Graphene research and applications (10 papers) and Semiconductor materials and devices (10 papers). S. Eichler collaborates with scholars based in Germany, France and United States. S. Eichler's co-authors include G. Dlubek, R. Krause‐Rehberg, Ch. Hübner, F. Börner, J. Gebauer, A. Polity, M. Jurisch, M. Luysberg, E. R. Weber and Hyunchul Sohn and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Eichler

39 papers receiving 525 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
S. Eichler 306 274 250 144 101 40 557
B. Bellamy 239 0.8× 219 0.8× 487 1.9× 106 0.7× 123 1.2× 23 696
Marc Chason 188 0.6× 90 0.3× 206 0.8× 105 0.7× 89 0.9× 26 404
J. Brunner 222 0.7× 158 0.6× 225 0.9× 80 0.6× 81 0.8× 30 520
J.I.B. Wilson 241 0.8× 223 0.8× 555 2.2× 110 0.8× 84 0.8× 37 665
J.P. Langeron 176 0.6× 279 1.0× 340 1.4× 185 1.3× 97 1.0× 43 765
J. A. Martin 246 0.8× 122 0.4× 343 1.4× 95 0.7× 48 0.5× 21 555
P. Willich 169 0.6× 260 0.9× 252 1.0× 137 1.0× 83 0.8× 41 556
Jeffrey P. Hayes 118 0.4× 179 0.7× 357 1.4× 52 0.4× 97 1.0× 35 509
Katsumi Takahiro 299 1.0× 430 1.6× 369 1.5× 130 0.9× 72 0.7× 40 733
Rodica Vlădoiu 206 0.7× 147 0.5× 258 1.0× 86 0.6× 39 0.4× 65 420

Countries citing papers authored by S. Eichler

Since Specialization
Citations

This map shows the geographic impact of S. Eichler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Eichler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Eichler more than expected).

Fields of papers citing papers by S. Eichler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Eichler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Eichler. The network helps show where S. Eichler may publish in the future.

Co-authorship network of co-authors of S. Eichler

This figure shows the co-authorship network connecting the top 25 collaborators of S. Eichler. A scholar is included among the top collaborators of S. Eichler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Eichler. S. Eichler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rudolph, P., et al.. (2007). Studies on dislocation patterning in 6‐inch GaAs crystals. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(8). 2934–2939. 3 indexed citations
2.
Geiler, H.‐D., et al.. (2006). Photoelastic characterization of residual stress in GaAs-wafers. Materials Science in Semiconductor Processing. 9(1-3). 345–350. 17 indexed citations
3.
Schwesig, Peter, et al.. (2005). Growth and characterization of 2" and 4" low EPD InP substrate crystals by the vertical gradient freeze (VGF)-method. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 392–397. 3 indexed citations
4.
Jurisch, M., et al.. (2004). LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues. Journal of Crystal Growth. 275(1-2). 283–291. 43 indexed citations
5.
Staab, Torsten E.M., et al.. (2004). Spatially Resolved Detection of Point Defects in the Vicinity of Scratches on GaAs by the Bonn Positron Microprobe. Materials science forum. 445-446. 510–512. 1 indexed citations
6.
Vizman, Daniel, S. Eichler, Jochen Friedrich, & G. Müller. (2004). Three-dimensional modeling of melt flow and interface shape in the industrial liquid-encapsulated Czochralski growth of GaAs. Journal of Crystal Growth. 266(1-3). 396–403. 19 indexed citations
7.
Staab, Torsten E.M., et al.. (2003). Point defects as result of surface deformation on a GaAs wafer. Applied Physics Letters. 83(20). 4128–4130. 5 indexed citations
8.
Eichler, S., et al.. (2002). A combined carbon and oxygen segregation model for the LEC growth of SI GaAs. Journal of Crystal Growth. 247(1-2). 69–76. 7 indexed citations
9.
Gebauer, J., R. Krause‐Rehberg, S. Eichler, & F. Börner. (1999). Doppler broadening spectroscopy using the FAST-ComTec two-dimensional coincidence system: a case study. Applied Surface Science. 149(1-4). 110–115. 16 indexed citations
10.
Börner, F., J. Gebauer, S. Eichler, et al.. (1999). Defects in CuIn(Ga)Se2 solar cell material characterized by positron annihilation: post-growth annealing effects. Physica B Condensed Matter. 273-274. 930–933. 3 indexed citations
11.
Dlubek, G., et al.. (1999). Reasons for the deviation of I1/I3 and τ1 from the expected lifetime parameters of positronium annihilation in polymers. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 149(4). 501–513. 27 indexed citations
12.
Börner, F., et al.. (1999). Large-depth defect profiling in GaAs wafers after saw cutting. Applied Surface Science. 149(1-4). 151–158. 7 indexed citations
13.
Dlubek, G., Ch. Hübner, & S. Eichler. (1999). Do MELT or CONTIN Programs Accurately Reveal the o-Ps Lifetime Distribution in Polymers?. physica status solidi (a). 172(2). 303–315. 6 indexed citations
14.
Dlubek, G., et al.. (1999). Does the MELT Program Accurately Reveal the Lifetime Distribution in Polymers?. physica status solidi (a). 174(2). 313–325. 25 indexed citations
15.
Dlubek, G., Ch. Hübner, & S. Eichler. (1998). Do the CONTIN or the MELT programs accurately reveal the o-Ps lifetime distribution in polymers? Analysis of experimental lifetime spectra of amorphous polymers. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 142(1-2). 191–202. 38 indexed citations
16.
Polity, A., et al.. (1998). Defects in electron-irradiated Si studied by positron-lifetime spectroscopy. Physical review. B, Condensed matter. 58(16). 10363–10377. 37 indexed citations
17.
Börner, F., et al.. (1998). Determination of the defect depth profile after saw cutting of GaAs wafers measured by positron annihilation. Journal of Applied Physics. 84(4). 2255–2262. 11 indexed citations
18.
Gebauer, J., R. Krause‐Rehberg, S. Eichler, et al.. (1997). Ga vacancies in low-temperature-grown GaAs identified by slow positrons. Applied Physics Letters. 71(5). 638–640. 60 indexed citations
19.
Eichler, S., J. Gebauer, F. Börner, et al.. (1997). Defects in silicon afterB+implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy. Physical review. B, Condensed matter. 56(3). 1393–1403. 40 indexed citations
20.
Eichler, S., Ch. Hübner, & R. Krause‐Rehberg. (1997). A Monte-Carlo simulation of positron diffusion in solids. Applied Surface Science. 116. 155–161. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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