F. Redmann

459 total citations
25 papers, 372 citations indexed

About

F. Redmann is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. Redmann has authored 25 papers receiving a total of 372 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 16 papers in Mechanics of Materials and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. Redmann's work include Muon and positron interactions and applications (16 papers), Semiconductor materials and devices (14 papers) and Silicon Carbide Semiconductor Technologies (9 papers). F. Redmann is often cited by papers focused on Muon and positron interactions and applications (16 papers), Semiconductor materials and devices (14 papers) and Silicon Carbide Semiconductor Technologies (9 papers). F. Redmann collaborates with scholars based in Germany, Japan and United States. F. Redmann's co-authors include R. Krause‐Rehberg, G. Dlubek, A. Kawasuso, H. Itoh, J. Gebauer, F. Börner, P. Sperr, Michael Weidner, Thomas Frank and Gerhard Pensl and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Redmann

25 papers receiving 363 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Redmann Germany 12 218 154 92 70 64 25 372
S. Molis United States 10 171 0.8× 107 0.7× 71 0.8× 37 0.5× 54 0.8× 29 325
A. Tagliaferro Italy 14 196 0.9× 146 0.9× 418 4.5× 41 0.6× 43 0.7× 34 492
Eugene J. Karwacki United States 11 275 1.3× 61 0.4× 194 2.1× 31 0.4× 24 0.4× 24 394
Jens V. Olsen Denmark 4 127 0.6× 203 1.3× 223 2.4× 17 0.2× 26 0.4× 6 355
John Persic Canada 13 277 1.3× 121 0.8× 150 1.6× 23 0.3× 43 0.7× 33 460
A. Doghmane Algeria 10 149 0.7× 76 0.5× 231 2.5× 33 0.5× 26 0.4× 49 369
Johannes Heller Germany 6 152 0.7× 82 0.5× 159 1.7× 42 0.6× 38 0.6× 7 341
Sandeep Dalal India 8 178 0.8× 53 0.3× 179 1.9× 54 0.8× 22 0.3× 26 356
M. Piens Belgium 11 96 0.4× 56 0.4× 213 2.3× 21 0.3× 71 1.1× 11 415

Countries citing papers authored by F. Redmann

Since Specialization
Citations

This map shows the geographic impact of F. Redmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Redmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Redmann more than expected).

Fields of papers citing papers by F. Redmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Redmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Redmann. The network helps show where F. Redmann may publish in the future.

Co-authorship network of co-authors of F. Redmann

This figure shows the co-authorship network connecting the top 25 collaborators of F. Redmann. A scholar is included among the top collaborators of F. Redmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Redmann. F. Redmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kawasuso, A., et al.. (2006). Positron study of electron irradiation-induced vacancy defects in SiC. Physica B Condensed Matter. 376-377. 350–353. 12 indexed citations
2.
Kawasuso, A., M. Yoshikawa, H. Itoh, et al.. (2005). Electron-positron momentum distributions associated with isolated silicon vacancies in3C−SiC. Physical Review B. 72(4). 12 indexed citations
3.
Бондаренко, В. А., J. Gebauer, F. Redmann, & R. Krause‐Rehberg. (2005). Vacancy formation in GaAs under different equilibrium conditions. Applied Physics Letters. 87(16). 12 indexed citations
4.
Бондаренко, В. А., J. Gebauer, F. Redmann, & R. Krause‐Rehberg. (2004). Vacancy Formation in GaAs under Different Equilibrium Conditions. Materials science forum. 445-446. 54–56. 1 indexed citations
5.
Dlubek, G., В. А. Бондаренко, Jürgen Pionteck, et al.. (2003). Studies of interdiffusion in polymer blends by PALS. Radiation Physics and Chemistry. 68(3-4). 369–373. 16 indexed citations
6.
Gebauer, J., F. Redmann, R. Krause‐Rehberg, et al.. (2003). Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation. Physical review. B, Condensed matter. 67(23). 27 indexed citations
7.
Kawasuso, A., Michael Weidner, F. Redmann, et al.. (2002). Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy. Materials science forum. 389-393. 489–492. 2 indexed citations
8.
9.
Krause‐Rehberg, R., F. Börner, & F. Redmann. (2001). Positron Beam Studies of Defects in Semiconductors. Materials science forum. 363-365. 404–408. 3 indexed citations
10.
Kawasuso, A., F. Redmann, R. Krause‐Rehberg, et al.. (2001). Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study. Materials science forum. 353-356. 537–542. 2 indexed citations
11.
Dryzek, Jerzy, E. Dryzek, R. Krause‐Rehberg, & F. Redmann. (2001). Subsurface Zones in Steel Samples Studied by Means of Positron Annihilation. Tribology Letters. 11(2). 121–125. 8 indexed citations
12.
Gebauer, J., et al.. (2001). Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs. Materials science forum. 363-365. 111–113. 2 indexed citations
13.
Kawasuso, A., F. Redmann, R. Krause‐Rehberg, et al.. (2001). Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy. Journal of Applied Physics. 90(7). 3377–3382. 38 indexed citations
14.
Redmann, F., et al.. (2001). Effects of Illumination on Positron Lifetime of Electron Irradiated n-type 6H-SiC. Materials science forum. 363-365. 126–128. 2 indexed citations
15.
Redmann, F., et al.. (2001). Illumination effects in irradiated 6H n-type SiC observed by positron annihilation spectroscopy. Physica B Condensed Matter. 308-310. 629–632. 2 indexed citations
16.
Kawasuso, A., F. Redmann, R. Krause‐Rehberg, et al.. (2001). Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy. Applied Physics Letters. 79(24). 3950–3952. 38 indexed citations
17.
Kawasuso, A., Michael Weidner, F. Redmann, et al.. (2001). Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation. Physica B Condensed Matter. 308-310. 660–663. 13 indexed citations
18.
Kawasuso, A., F. Redmann, R. Krause‐Rehberg, et al.. (2001). Positron Annihilation Due to Silicon Vacancies in 3C and 6H SiC Epitaxial Layers Induced by 1 MeV Electron Irradiation. physica status solidi (b). 223(2). R8–R10. 11 indexed citations
19.
Krause‐Rehberg, R., F. Börner, & F. Redmann. (2000). Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp /2. Applied Physics Letters. 77(24). 3932–3934. 22 indexed citations
20.
Gebauer, J., et al.. (1999). Influence of stoichiometry and doping on vacancies in n-type GaAs. Physica B Condensed Matter. 273-274. 705–709. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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