K. Domen

1.4k total citations
42 papers, 1.1k citations indexed

About

K. Domen is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, K. Domen has authored 42 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Atomic and Molecular Physics, and Optics, 26 papers in Electrical and Electronic Engineering and 25 papers in Condensed Matter Physics. Recurrent topics in K. Domen's work include Semiconductor Quantum Structures and Devices (27 papers), GaN-based semiconductor devices and materials (25 papers) and Semiconductor materials and devices (11 papers). K. Domen is often cited by papers focused on Semiconductor Quantum Structures and Devices (27 papers), GaN-based semiconductor devices and materials (25 papers) and Semiconductor materials and devices (11 papers). K. Domen collaborates with scholars based in Japan and United States. K. Domen's co-authors include Akito Kuramata, Toshiyuki Tanahashi, T. Tanahashi, Kazuhiko Horino, Hideo Hosono, Toshio Kamiya, S. Kubota, Makoto Kondō, C. Anayama and Hidenori Hiramatsu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

K. Domen

41 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Domen Japan 20 593 593 509 494 302 42 1.1k
Shing-Chung Wang Taiwan 18 720 1.2× 857 1.4× 656 1.3× 695 1.4× 414 1.4× 63 1.5k
Sandip Ghosh India 19 530 0.9× 767 1.3× 499 1.0× 998 2.0× 349 1.2× 79 1.5k
D. Johnstone United States 20 342 0.6× 602 1.0× 235 0.5× 486 1.0× 337 1.1× 52 938
A. Kaschner Germany 18 816 1.4× 699 1.2× 397 0.8× 939 1.9× 592 2.0× 40 1.5k
Władek Walukiewicz United States 23 432 0.7× 1.1k 1.8× 546 1.1× 993 2.0× 307 1.0× 90 1.6k
I. Izpura Spain 15 714 1.2× 719 1.2× 472 0.9× 326 0.7× 435 1.4× 69 1.1k
K. Kubota Japan 17 187 0.3× 452 0.8× 345 0.7× 572 1.2× 169 0.6× 54 957
J. Allègre France 18 428 0.7× 683 1.2× 749 1.5× 643 1.3× 219 0.7× 69 1.2k
D. V. Lang United States 13 458 0.8× 599 1.0× 311 0.6× 324 0.7× 239 0.8× 25 876
S. Nagai Japan 9 418 0.7× 449 0.8× 224 0.4× 463 0.9× 225 0.7× 19 894

Countries citing papers authored by K. Domen

Since Specialization
Citations

This map shows the geographic impact of K. Domen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Domen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Domen more than expected).

Fields of papers citing papers by K. Domen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Domen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Domen. The network helps show where K. Domen may publish in the future.

Co-authorship network of co-authors of K. Domen

This figure shows the co-authorship network connecting the top 25 collaborators of K. Domen. A scholar is included among the top collaborators of K. Domen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Domen. K. Domen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sakaguchi, Isao, Naoki Ohashi, K. Domen, et al.. (2014). Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering. ECS Journal of Solid State Science and Technology. 3(9). Q3085–Q3090. 52 indexed citations
2.
Abe, Katsumi, K. Domen, Kenji Nomura, et al.. (2014). Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs. Journal of Display Technology. 10(11). 979–983. 26 indexed citations
3.
Xiao, Zewen, K. Domen, Toshio Kamiya, & Hideo Hosono. (2013). Apparent high mobility ~30 cm<sup>2</sup>/Vs of amorphous In–Ga–Zn–O thin-film transistor and its origin. Journal of the Ceramic Society of Japan. 121(1411). 295–298. 3 indexed citations
4.
Kikkawa, T., Miyuki Nagahara, T. Kimura, et al.. (2003). A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure. 3. 1815–1818. 22 indexed citations
5.
Ramvall, P., Yoshinobu Aoyagi, Akito Kuramata, et al.. (2000). Doping-dependent optical gain in GaN. Applied Physics Letters. 76(21). 2994–2996. 12 indexed citations
6.
Hacke, Peter, et al.. (1999). Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure. physica status solidi (b). 216(1). 639–644. 8 indexed citations
7.
Kuramata, Akito, et al.. (1998). Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate. Japanese Journal of Applied Physics. 37(11B). L1373–L1373. 37 indexed citations
8.
Kuramata, Akito, et al.. (1998). Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure. Japanese Journal of Applied Physics. 37(10B). L1205–L1205. 6 indexed citations
9.
Domen, K., et al.. (1998). Interwell inhomogeneity of carrier injection in InGaN/GaN/AlGaN multiquantum well lasers. Applied Physics Letters. 73(19). 2775–2777. 32 indexed citations
10.
Domen, K., Akito Kuramata, & T. Tanahashi. (1998). Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode. Applied Physics Letters. 72(11). 1359–1361. 30 indexed citations
11.
Domen, K., et al.. (1998). Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes. MRS Internet Journal of Nitride Semiconductor Research. 3. 27 indexed citations
12.
Domen, K., et al.. (1997). Optical gain for wurtzite GaN with anisotropic strain in c plane. IEEE Journal of Selected Topics in Quantum Electronics. 3(2). 450–455. 10 indexed citations
13.
Kuramata, Akito, Kazuhiko Horino, K. Domen, & Toshiyuki Tanahashi. (1997). Properties of GaN epitaxial layer grown on (111) MgAl2O4 substrate. Solid-State Electronics. 41(2). 251–254. 4 indexed citations
14.
Kuramata, Akito, et al.. (1997). InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 36(9A). L1130–L1130. 108 indexed citations
15.
Domen, K., et al.. (1995). Effect of spin-orbit split-off band on optical gain in AlGaInP/GaInP strained quantum wells. Applied Physics Letters. 66(4). 466–468. 3 indexed citations
16.
Kondō, Makoto, C. Anayama, Naoko Okada, et al.. (1994). Crystallographic orientation dependence of impurity incorporation into III-V compound semiconductors grown by metalorganic vapor phase epitaxy. Journal of Applied Physics. 76(2). 914–927. 65 indexed citations
17.
Furuya, Akira, et al.. (1992). Small beam astigmatism of AlGaInP visible laser diode using selfaligned bend waveguide. Electronics Letters. 28(12). 1164–1165. 4 indexed citations
18.
Nakamura, T., et al.. (1992). The electrical, optical and crystalline properties of GaAs: C grown by GSMBE using TMG and AsH3 for application to HBTs. Journal of Crystal Growth. 120(1-4). 296–300. 5 indexed citations
19.
Domen, K., C. Anayama, Makoto Kondō, et al.. (1991). Study on radiative efficiency in AlGaInP/GaInP double-heterostructures: influence of deep level in cladding layers. Journal of Crystal Growth. 115(1-4). 529–532. 18 indexed citations
20.
Kondō, Makoto, K. Domen, C. Anayama, Toshiyuki Tanahashi, & Kazuo Nakajima. (1991). MOVPE growth and optical properties of AlGaInP/GaInP strained single quantum well structures. Journal of Crystal Growth. 107(1-4). 578–582. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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