Yingfeng He

768 total citations
35 papers, 645 citations indexed

About

Yingfeng He is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Yingfeng He has authored 35 papers receiving a total of 645 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 20 papers in Materials Chemistry and 19 papers in Electrical and Electronic Engineering. Recurrent topics in Yingfeng He's work include GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (10 papers) and Semiconductor materials and devices (10 papers). Yingfeng He is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (10 papers) and Semiconductor materials and devices (10 papers). Yingfeng He collaborates with scholars based in China, United States and Taiwan. Yingfeng He's co-authors include T. D. Moustakas, Ting Lei, S. J. Berkowitz, R. J. Graham, Mingzeng Peng, Huiyun Wei, Peng Qiu, Xinhe Zheng, Meiling Li and Caixia Hou and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

Yingfeng He

33 papers receiving 621 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yingfeng He China 12 396 325 300 233 160 35 645
Ryota Ishii Japan 14 331 0.8× 238 0.7× 220 0.7× 207 0.9× 162 1.0× 41 580
Wen-Cheng Ke Taiwan 14 281 0.7× 308 0.9× 197 0.7× 191 0.8× 102 0.6× 52 521
Ziguang Ma China 13 506 1.3× 436 1.3× 387 1.3× 275 1.2× 266 1.7× 59 833
M. Korytov France 14 350 0.9× 311 1.0× 174 0.6× 267 1.1× 138 0.9× 44 560
Mingzeng Peng China 15 282 0.7× 264 0.8× 286 1.0× 180 0.8× 90 0.6× 54 504
Erhan Arac United Kingdom 8 271 0.7× 322 1.0× 164 0.5× 332 1.4× 75 0.5× 10 578
Xiantong Zheng China 14 434 1.1× 431 1.3× 217 0.7× 324 1.4× 168 1.1× 57 730
Soojeong Choi United States 14 376 0.9× 298 0.9× 230 0.8× 293 1.3× 121 0.8× 29 569
Kwan Soo Chung South Korea 9 386 1.0× 424 1.3× 253 0.8× 265 1.1× 98 0.6× 23 683
Marta Sobańska Poland 15 423 1.1× 328 1.0× 218 0.7× 266 1.1× 91 0.6× 52 597

Countries citing papers authored by Yingfeng He

Since Specialization
Citations

This map shows the geographic impact of Yingfeng He's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yingfeng He with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yingfeng He more than expected).

Fields of papers citing papers by Yingfeng He

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yingfeng He. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yingfeng He. The network helps show where Yingfeng He may publish in the future.

Co-authorship network of co-authors of Yingfeng He

This figure shows the co-authorship network connecting the top 25 collaborators of Yingfeng He. A scholar is included among the top collaborators of Yingfeng He based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yingfeng He. Yingfeng He is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
He, Yingfeng, et al.. (2023). High-quality GaN grown on stainless steel substrate with Al2O3 buffer via plasma-enhanced atomic layer deposition. Materials Letters. 350. 134801–134801. 2 indexed citations
2.
He, Yingfeng, Huiyun Wei, Peng Qiu, et al.. (2023). Graphene-assisted low temperature growth of nearly single-crystalline GaN thin films via plasma-enhanced atomic layer deposition. Applied Physics Letters. 122(4). 3 indexed citations
3.
Zhu, Xiaoli, Peng Qiu, Huiyun Wei, et al.. (2023). Theoretical analysis of GaN-based semiconductor in changing performanc of perovskite solar cell. Acta Physica Sinica. 72(10). 107702–107702. 1 indexed citations
4.
Tian, Feng, Peng Qiu, Yingfeng He, et al.. (2023). Se vacancy modulation of centimeter-scale 2D MoSe2 continuous films via Se evaporating temperature. Materials Today Communications. 35. 105528–105528. 4 indexed citations
5.
Tian, Feng, Peng Qiu, Yingfeng He, et al.. (2022). Controllable Selenization Transformation from MoO2 to MoSe2 by Gas Pressure‐Mediated Chemical Vapor Deposition. physica status solidi (a). 219(14). 3 indexed citations
6.
Li, Yangfeng, Yingfeng He, Huiyun Wei, et al.. (2022). Two-Step Deposition of an Ultrathin GaN Film on a Monolayer MoS2 Template. ACS Applied Materials & Interfaces. 14(14). 16866–16875. 4 indexed citations
7.
He, Yingfeng, Meiling Li, Huiyun Wei, et al.. (2021). The insertion of the ALD diffusion barriers: An approach to improve the quality of the GaN deposited on Kapton by PEALD. Applied Surface Science. 566. 150684–150684. 3 indexed citations
8.
Li, Ye, Xixi Wang, Huiyun Wei, et al.. (2021). Enhancement of interface transportation for quantum dot solar cells using ultrathin InN by atomic layer deposition. Acta Physica Sinica. 70(18). 187702–187702.
9.
Wei, Huiyun, Peng Qiu, Ye Li, et al.. (2021). Challenges and strategies of all-inorganic lead-free halide perovskite solar cells. Ceramics International. 48(5). 5876–5891. 26 indexed citations
10.
He, Yingfeng, et al.. (2021). Multiscale structures and rheology of bisurea-loaded resins for anti-sagging applications. Soft Matter. 17(47). 10628–10639. 2 indexed citations
11.
Zhao, Gang, Yingfeng He, Yangfeng Li, et al.. (2020). Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films. Applied Physics Letters. 116(21). 18 indexed citations
12.
He, Yingfeng, Meiling Li, Huiyun Wei, et al.. (2019). Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition. Acta Metallurgica Sinica (English Letters). 32(12). 1530–1536. 11 indexed citations
13.
Wei, Huiyun, Jionghua Wu, Peng Qiu, et al.. (2019). Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells. Journal of Materials Chemistry A. 7(44). 25347–25354. 35 indexed citations
14.
He, Yingfeng, et al.. (2019). PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces. Chinese Physics B. 28(2). 26801–26801. 12 indexed citations
15.
Peng, Mingzeng, et al.. (2017). PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity. Nanoscale Research Letters. 12(1). 279–279. 35 indexed citations
16.
17.
Li, Zhang, et al.. (2014). Extracting accurate complex refractive index from solid pellets based on time-domain terahertz reflection spectroscopy. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9275. 92751I–92751I. 2 indexed citations
18.
Tao, Xiaoma, et al.. (2013). Thermodynamic optimization of Co–Ge binary system. Thermochimica Acta. 572. 94–100. 6 indexed citations
19.
Wang, Jian, Jie Zhu, & Yingfeng He. (2013). The influence of different locations of sputter guns on the morphological and structural properties of Cu–In–Ga precursors and Cu(In,Ga)Se2 thin films. Applied Surface Science. 288. 109–114. 9 indexed citations
20.
Geiler, Anton, et al.. (2007). Epitaxial growth of PbFe12O19 thin films by alternating target laser ablation deposition of Fe2O3 and PbO. Journal of Applied Physics. 101(9). 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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