Zhonghai Yu

1.4k total citations
50 papers, 1.1k citations indexed

About

Zhonghai Yu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Zhonghai Yu has authored 50 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 28 papers in Materials Chemistry and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Zhonghai Yu's work include GaN-based semiconductor devices and materials (16 papers), Chalcogenide Semiconductor Thin Films (15 papers) and ZnO doping and properties (11 papers). Zhonghai Yu is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Chalcogenide Semiconductor Thin Films (15 papers) and ZnO doping and properties (11 papers). Zhonghai Yu collaborates with scholars based in United States, China and Singapore. Zhonghai Yu's co-authors include T. H. Myers, N. C. Giles, J. F. Schetzina, J.D. Brown, J. W. Cook, Mark A. Johnson, Michelle Richards‐Babb, John F. Muth, R. M. Kolbas and Haolei Hui and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Zhonghai Yu

48 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zhonghai Yu United States 18 736 665 385 380 241 50 1.1k
Salvatore Di Franco Italy 21 597 0.8× 1.0k 1.6× 283 0.7× 318 0.8× 200 0.8× 105 1.4k
Basanta Roul India 19 605 0.8× 503 0.8× 512 1.3× 624 1.6× 225 0.9× 74 1.1k
P. H. Jefferson United Kingdom 16 662 0.9× 554 0.8× 435 1.1× 529 1.4× 121 0.5× 23 1.1k
S. Nagai Japan 9 463 0.6× 449 0.7× 225 0.6× 418 1.1× 240 1.0× 19 894
Mohana K. Rajpalke India 19 483 0.7× 707 1.1× 295 0.8× 418 1.1× 307 1.3× 67 1.2k
Hyunwook Shim South Korea 11 622 0.8× 433 0.7× 386 1.0× 562 1.5× 172 0.7× 14 990
Donald L. Dorsey United States 15 833 1.1× 498 0.7× 604 1.6× 512 1.3× 118 0.5× 43 1.2k
Sandip Ghosh India 19 998 1.4× 767 1.2× 349 0.9× 530 1.4× 260 1.1× 79 1.5k
Ziguang Ma China 13 436 0.6× 387 0.6× 275 0.7× 506 1.3× 186 0.8× 59 833
David Segev United States 9 752 1.0× 425 0.6× 530 1.4× 621 1.6× 134 0.6× 11 1.1k

Countries citing papers authored by Zhonghai Yu

Since Specialization
Citations

This map shows the geographic impact of Zhonghai Yu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhonghai Yu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhonghai Yu more than expected).

Fields of papers citing papers by Zhonghai Yu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhonghai Yu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhonghai Yu. The network helps show where Zhonghai Yu may publish in the future.

Co-authorship network of co-authors of Zhonghai Yu

This figure shows the co-authorship network connecting the top 25 collaborators of Zhonghai Yu. A scholar is included among the top collaborators of Zhonghai Yu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhonghai Yu. Zhonghai Yu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Lei, Shishun Zhao, Weijian Li, et al.. (2025). Ultrabroadband nonlinear Hall rectifier using SnTe. Nature Nanotechnology. 20(11). 1588–1595. 1 indexed citations
2.
Han, Yanbing, Zhonghai Yu, Junhao Zhu, et al.. (2025). Integration of Photo‐ and Thermal‐Detection Based on Hexagonal Chalcogenide Perovskite Sr 8 Ti 7 S 21 with Full Spectrum Absorption. Advanced Functional Materials. 35(34). 1 indexed citations
3.
Lai, Jia‐Min, Zhonghai Yu, Xiaoqian Zhang, et al.. (2025). Recent progress on electron- and magnon-mediated torques. Chinese Physics B. 34(10). 107501–107501.
4.
Guo, Jiale, Zhonghai Yu, Kaiyun Chen, et al.. (2025). Tunable green luminescence in Eu-doped SrZrS3 perovskite with air stability. Journal of Rare Earths.
5.
Yu, Zhonghai, Lei Yang, Rui Hou, et al.. (2025). Field‐Free Switching of Perpendicular Magnetization in Low‐Symmetry Materials. Advanced Functional Materials. 36(21). 1 indexed citations
6.
Yang, Lei, et al.. (2025). Impact of Sulfurization Temperature on the Formation and Properties of Chalcogenide Perovskites. Molecules. 30(6). 1198–1198. 1 indexed citations
7.
Yu, Zhonghai, Jiale Guo, Kaiyun Chen, et al.. (2024). Ti–S antibonding coupling enables enhanced bandgap tuning in Ti-substituted BaHfS3 perovskite. Ceramics International. 50(7). 10889–10896. 10 indexed citations
8.
Yu, Zhonghai, Haolei Hui, Damien West, et al.. (2023). Chalcogenide Perovskite Thin Films with Controlled Phases for Optoelectronics. Advanced Functional Materials. 34(7). 22 indexed citations
9.
Wang, Zepeng, Ruirui Kang, Wenyuan Liu, et al.. (2021). (Bi0.5Na0.5)TiO3-based relaxor ferroelectrics with medium permittivity featuring enhanced energy-storage density and excellent thermal stability. Chemical Engineering Journal. 427. 131989–131989. 87 indexed citations
10.
Tian, Fanghua, Shuo Huang, Yin Zhang, et al.. (2021). Tuning the exchange bias effect via thermal treatment temperature in bulk Ni50Mn42In3Sb5 Heusler alloys. Applied Physics Express. 14(10). 105502–105502. 2 indexed citations
11.
Shi, Peng, Tangyuan Li, Xiaojie Lou, et al.. (2020). Large electric-field-induced strain and energy storage properties in Bi0.5Na0.5TiO3-(0.5Ba0.7Ca0.3TiO3-0.5BaTi0.8Zr0.2O3) lead-free relaxor ferroelectric ceramics. Journal of Alloys and Compounds. 860. 158369–158369. 46 indexed citations
12.
Johnson, Mark A., Zhonghai Yu, J.D. Brown, et al.. (1999). A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 594–599. 2 indexed citations
13.
Yu, Zhonghai, Mark A. Johnson, J.D. Brown, et al.. (1998). Study of the epitaxial–lateral-overgrowth (ELO) process for GaN on sapphire. Journal of Crystal Growth. 195(1-4). 333–339. 20 indexed citations
14.
Setzler, Scott D., Simona Moldovan, Zhonghai Yu, et al.. (1997). Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy. Applied Physics Letters. 70(17). 2274–2276. 36 indexed citations
15.
Yu, Zhonghai, et al.. (1996). The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions. MRS Proceedings. 449. 10 indexed citations
16.
Yu, Zhonghai, et al.. (1996). The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy. Applied Physics Letters. 69(18). 2731–2733. 67 indexed citations
17.
Johnson, Mark A., Zhonghai Yu, C. Boney, et al.. (1996). MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple RF Plasma Sources. MRS Proceedings. 449. 7 indexed citations
18.
Yu, Zhonghai, T. H. Myers, K. A. Harris, et al.. (1995). Reflectance and photoreflectance for in-situ monitoring of the molecular beam epitaxial growth of CdTe and Hg-based materials. Journal of Electronic Materials. 24(5). 685–690. 2 indexed citations
19.
Giles, N. C., Jaesun Lee, T. H. Myers, et al.. (1995). Optical properties of undoped and iodine-doped CdTe. Journal of Electronic Materials. 24(5). 691–696. 7 indexed citations
20.
Richards‐Babb, Michelle, et al.. (1995). An Atomic Force Microscopy Study of the Initial Nucleation of GaN on Sapphire. MRS Proceedings. 395. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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