M. Gendry

3.3k total citations
200 papers, 2.7k citations indexed

About

M. Gendry is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Gendry has authored 200 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 175 papers in Electrical and Electronic Engineering, 149 papers in Atomic and Molecular Physics, and Optics and 66 papers in Materials Chemistry. Recurrent topics in M. Gendry's work include Semiconductor Quantum Structures and Devices (120 papers), Semiconductor materials and devices (64 papers) and Advanced Semiconductor Detectors and Materials (63 papers). M. Gendry is often cited by papers focused on Semiconductor Quantum Structures and Devices (120 papers), Semiconductor materials and devices (64 papers) and Advanced Semiconductor Detectors and Materials (63 papers). M. Gendry collaborates with scholars based in France, Tunisia and Canada. M. Gendry's co-authors include G. Hollinger, J. Brault, G. Grenet, Cristina Santinelli, T. Benyattou, B. Salem, G. Patriarche, Y. Robach, P. Viktorovitch and Philippe Régreny and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

M. Gendry

186 papers receiving 2.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Gendry France 25 2.1k 1.9k 1.1k 556 191 200 2.7k
M. Stoffel France 26 1.4k 0.7× 1.6k 0.8× 998 0.9× 661 1.2× 89 0.5× 104 2.4k
D. J. Olego United States 30 2.2k 1.1× 2.1k 1.1× 1.5k 1.5× 336 0.6× 174 0.9× 77 3.2k
Kathleen Kash United States 28 1.2k 0.6× 1.6k 0.8× 1.1k 1.0× 305 0.5× 186 1.0× 89 2.5k
D. Bensahel France 27 1.9k 0.9× 1.1k 0.6× 1.1k 1.0× 508 0.9× 68 0.4× 142 2.3k
G. Guizzetti Italy 26 1.4k 0.7× 1.3k 0.7× 785 0.7× 341 0.6× 188 1.0× 130 2.0k
V. Gottschalch Germany 22 1.0k 0.5× 998 0.5× 697 0.7× 381 0.7× 296 1.5× 145 1.7k
Hiroshi Kakibayashi Japan 19 1.1k 0.5× 1.1k 0.6× 760 0.7× 899 1.6× 168 0.9× 61 1.9k
S. Rubini Italy 27 1.2k 0.6× 1.2k 0.6× 1.0k 1.0× 989 1.8× 188 1.0× 140 2.2k
J.‐T. Zettler Germany 24 955 0.5× 984 0.5× 530 0.5× 180 0.3× 117 0.6× 84 1.5k
Ravi Droopad United States 31 2.8k 1.4× 1.1k 0.6× 2.1k 2.0× 374 0.7× 825 4.3× 197 3.8k

Countries citing papers authored by M. Gendry

Since Specialization
Citations

This map shows the geographic impact of M. Gendry's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Gendry with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Gendry more than expected).

Fields of papers citing papers by M. Gendry

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Gendry. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Gendry. The network helps show where M. Gendry may publish in the future.

Co-authorship network of co-authors of M. Gendry

This figure shows the co-authorship network connecting the top 25 collaborators of M. Gendry. A scholar is included among the top collaborators of M. Gendry based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Gendry. M. Gendry is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Régreny, Philippe, Céline Chevalier, Hai Son Nguyen, et al.. (2023). Enhanced Light Trapping in GaAs/TiO2-Based Photocathodes for Hydrogen Production. ACS Applied Materials & Interfaces. 15(46). 53446–53454. 8 indexed citations
2.
Botella, C., Nicholas Blanchard, M. Gendry, et al.. (2021). Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy. Nanotechnology. 32(15). 155602–155602. 10 indexed citations
3.
Régreny, Philippe, Jean‐Louis Leclercq, Maïté Volatier, et al.. (2019). Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer. Solar Energy Materials and Solar Cells. 195. 204–212. 12 indexed citations
4.
Piazza, Valerio, Andréa Cattoni, Andrea Scaccabarozzi, et al.. (2018). Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon. Nanotechnology. 30(8). 84005–84005. 15 indexed citations
5.
Benali, A., Guillaume Grenet, Nicolas Chauvin, et al.. (2016). GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell. Nanoscale. 8(34). 15637–15644. 4 indexed citations
6.
Anufriev, Roman, G. Patriarche, Xavier Letartre, et al.. (2015). Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires. Nanotechnology. 26(39). 395701–395701. 12 indexed citations
7.
8.
Benali, A., Philippe Régreny, Emmanuel Drouard, et al.. (2014). Optical Simulation of Multijunction Solar Cells Based on III-V Nanowires on Silicon. Energy Procedia. 60. 109–115. 6 indexed citations
9.
Sato, Yu, et al.. (2014). Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material. Optics Express. 22(12). 14830–14830. 8 indexed citations
10.
Gendry, M., et al.. (2013). Near-infrared nano-spectroscopy and emission energy control of semiconductor quantum dots using a phase-change material. Journal of Physics Conference Series. 471. 12007–12007. 1 indexed citations
11.
Chauvin, Nicolas, et al.. (2011). Optical properties of wurtzite InAs/InP core-shell nanowires grown on silicon substrates. 1–4.
12.
Bru‐Chevallier, C., H. Dumont, B. Canut, et al.. (2011). InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates. Journal of Nanoscience and Nanotechnology. 11(10). 9153–9159. 5 indexed citations
13.
Ilahi, Bouraoui, H. Mâaref, B. Salem, et al.. (2010). Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes. HAL (Le Centre pour la Communication Scientifique Directe). 4 indexed citations
14.
Saiki, Toshiharu, et al.. (2010). Low-Density InAs Quantum Dots Grown on InP(001) Using Solid-Source Molecular Beam Epitaxy with a Post-Growth Annealing Process. Japanese Journal of Applied Physics. 49(4R). 41201–41201. 12 indexed citations
15.
Seassal, Christian, Emmanuel Dupuy, Philippe Régreny, et al.. (2009). Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 15 μm using cavity-confined slow light. Optics Express. 17(7). 5439–5439. 14 indexed citations
16.
Delhaye, Gabriel, Clément Merckling, Mario El Kazzi, et al.. (2006). Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001). Journal of Applied Physics. 100(12). 65 indexed citations
17.
Chauvin, Nicolas, G. Brémond, G. Guillot, et al.. (2006). Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001). Nanotechnology. 17(8). 1831–1834. 8 indexed citations
18.
Chauvin, Nicolas, et al.. (2006). Shape and size effects on multi‐exciton complexes in single InAs quantum dots grown on InP(001) substrate. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(11). 3912–3915. 2 indexed citations
19.
Gendry, M., E. Bergignat, G. Grenet, et al.. (2001). Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy. Optical Materials. 17(1-2). 271–274. 1 indexed citations
20.
Hollinger, G., et al.. (1990). Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilization. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(4). 832–837. 90 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by M. Stoffel Breakdown of academic impact, for papers by D. J. Olego Breakdown of academic impact, for papers by Kathleen Kash Breakdown of academic impact, for papers by D. Bensahel Breakdown of academic impact, for papers by G. Guizzetti Breakdown of academic impact, for papers by V. Gottschalch Breakdown of academic impact, for papers by Hiroshi Kakibayashi Breakdown of academic impact, for papers by S. Rubini Breakdown of academic impact, for papers by J.‐T. Zettler Breakdown of academic impact, for papers by Ravi Droopad
Rankless by CCL
2026