H. Nelson

1.0k citations

27 papers · 676 indexed · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Optical properties and cooling technologies in crystalline materials
Nuclear Energy and Engineering

Papers in

Atomic and Molecular Physics, and Optics 14
- Semiconductor Quantum Structures and Devices 10
Condensed Matter Physics 5
- GaN-based semiconductor devices and materials 5

Co-authors: H. Kressel G. C. Dousmanis F. Z. Hawrylo C.W. Mueller K. G. Petzinger H. Schade D. L. Staebler J. I. Pánkové
Journals: Applied Physics Letters (9 papers)Journal of Applied Physics (6 papers)IEEE Journal of Quantum Electronics (2 papers)Proceedings of the IEEE (2 papers)Journal of Crystal Growth (1 paper)
Partner nations: United States

In The Last Decade

H. Nelson

27 papers receiving 568 citations

Peers

Countries citing papers authored by H. Nelson

Since Specialization

Citations

This map shows the geographic impact of H. Nelson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Nelson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Nelson more than expected).

Fields of papers citing papers by H. Nelson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Nelson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Nelson. The network helps show where H. Nelson may publish in the future.

Co-authorship network

The 18 scholars most cited alongside H. Nelson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Nelson Line = papers co-authored together H. Nelson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Heterojunction cold-cathode electron emitters of (AlGa) As-GaAs Journal of Luminescence ·H. Kressel, H. Schade, H. Nelson	1973	9
2	Novel GaAs–(AlGa)As Cold-Cathode Structure and Factors Affecting Extended Operation Applied Physics Letters ·H. Schade, H. Nelson, H. Kressel	1972	23
3	EFFICIENT PHOTOEMISSION FROM Ge-DOPED GaAs GROWN BY LIQUID-PHASE EPITAXY Applied Physics Letters ·H. Schade, H. Nelson, H. Kressel	1971	20
4	EFFICIENT ELECTRON EMISSION FROM GaAs–Al1−xGaxAs OPTOELECTRONIC COLD-CATHODE STRUCTURES Applied Physics Letters ·H. Schade, H. Nelson, H. Kressel	1971	15
5	Control of Optical Losses in p-n Junction Lasers by Use of a Heterojunction: Theory and Experiment Journal of Applied Physics ·H. Kressel, H. Nelson, F. Z. Hawrylo	1970	35
6	Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation Metallurgical Transactions ·H. Kressel, N. E. Byer, H. F. Lockwood, F. Z. Hawrylo, H. Nelson, M. S. Abrahams, S. H. McFarlane	1970	23
7	AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTURE Applied Physics Letters ·H. Kressel, A. B. Boswell, H. Nelson, J. J. Tietjen, Leonard R. Weisberg	1970	17
8	Optical losses in "close-confinement" epitaxial p-n junction lasers - Theory and experiment IEEE Journal of Quantum Electronics ·H. Kressel, H. Nelson, F. Z. Hawrylo	1970	1
9	IMPROVED RED AND INFRARED LIGHT EMITTING AlxGa1−xAs LASER DIODES USING THE CLOSE-CONFINEMENT STRUCTURE Applied Physics Letters ·H. Nelson, H. Kressel	1969	24
10	Electrical and Optical Properties of n-Type Si-Compensated GaAs Prepared by Liquid-Phase Epitaxy Journal of Applied Physics ·H. Kressel, H. Nelson	1969	34
11	Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase Epitaxy Journal of Applied Physics ·H. Kressel, 万槐斌, H. Nelson, F. Z. Hawrylo	1968	115
12	New Deep-Level Luminescence in GaAs:Sn Journal of Applied Physics ·H. Kressel, H. Nelson, F. Z. Hawrylo	1968	30
13	High-power pulsed GaAs laser diodes operating at room temperature Proceedings of the IEEE ·H. Nelson	1967	13
14	A Light-Activated Semiconductor Switch Journal of Applied Physics ·D. D. Meyerhofer, Xiao Gang Zheng, H. Nelson	1967	4
15	TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERS Applied Physics Letters ·G. C. Dousmanis, H. Nelson, D. L. Staebler	1964	56
16	Evidence of Refrigerating Action by Means of Photon Emission in Semiconductor Diodes Physical Review ·G. C. Dousmanis, C.W. Mueller, H. Nelson, K. G. Petzinger	1964	92
17	EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GaAs DIODES Applied Physics Letters ·G. C. Dousmanis, C.W. Mueller, H. Nelson	1963	28
18	Epitaxial growth from the liquid state and its application to the fabrication of tunnel and lasar diodes Medical Entomology and Zoology ·H. Nelson	1963	24
19	The Preparation of Semiconductor Devices by Lapping and Diffusion Techniques Proceedings of the IRE ·H. Nelson	1958	1
20	The preparation of semiconductor devices by lapping and diffusion techniques IRE Transactions on Electron Devices ·H. Nelson	1958	1

About H. Nelson

H. Nelson is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Computational Mechanics and Catalysis, having authored 27 papers that have together received 676 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (10 papers), Laser Design and Applications (8 papers), Advanced Semiconductor Detectors and Materials (6 papers), GaN-based semiconductor devices and materials (5 papers), Solid State Laser Technologies (5 papers), ZnO doping and properties (4 papers), Laser Material Processing Techniques (3 papers) and Semiconductor materials and devices (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (470 citations), Nuclear Energy and Engineering (4 citations), Electrical and Electronic Engineering (493 citations), Condensed Matter Physics (84 citations) and Materials Chemistry (170 citations). H. Nelson has collaborated with scholars based in United States. Frequent co-authors include H. Kressel, G. C. Dousmanis, F. Z. Hawrylo, C.W. Mueller, K. G. Petzinger, H. Schade, D. L. Staebler, J. I. Pánkové, H. F. Lockwood and R. Braunstein. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Journal of Quantum Electronics, Proceedings of the IEEE and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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