S. H. McFarlane

520 total citations
22 papers, 368 citations indexed

About

S. H. McFarlane is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. H. McFarlane has authored 22 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in S. H. McFarlane's work include Semiconductor materials and devices (6 papers), Semiconductor Quantum Structures and Devices (5 papers) and Semiconductor materials and interfaces (3 papers). S. H. McFarlane is often cited by papers focused on Semiconductor materials and devices (6 papers), Semiconductor Quantum Structures and Devices (5 papers) and Semiconductor materials and interfaces (3 papers). S. H. McFarlane collaborates with scholars based in United States. S. H. McFarlane's co-authors include P. J. Zanzucchi, Judah Levine, Peter Mark, George D. O’Clock, M. T. Duffy, H. Kressel, M. Ettenberg, H. Nelson, M. S. Abrahams and I. Ladany and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. H. McFarlane

22 papers receiving 316 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. H. McFarlane United States 11 199 178 136 97 93 22 368
G. Jungk Germany 11 242 1.2× 203 1.1× 70 0.5× 65 0.7× 167 1.8× 53 400
Ray Kaplan United States 7 244 1.2× 235 1.3× 199 1.5× 54 0.6× 162 1.7× 9 482
E. I. Alessandrini United States 10 167 0.8× 149 0.8× 67 0.5× 36 0.4× 130 1.4× 24 325
E. Koppensteiner Austria 13 276 1.4× 294 1.7× 80 0.6× 71 0.7× 191 2.1× 27 458
K. Naukkarinen Finland 7 170 0.9× 85 0.5× 42 0.3× 51 0.5× 121 1.3× 17 316
D. A. Vanderwater United States 13 383 1.9× 278 1.6× 253 1.9× 67 0.7× 93 1.0× 19 533
N. L. Andrew United Kingdom 10 186 0.9× 207 1.2× 155 1.1× 47 0.5× 184 2.0× 17 411
K. E. Strege United States 11 358 1.8× 343 1.9× 45 0.3× 50 0.5× 116 1.2× 18 508
McD. Robinson United States 13 305 1.5× 141 0.8× 127 0.9× 79 0.8× 163 1.8× 30 456
K. Werner Netherlands 13 424 2.1× 308 1.7× 74 0.5× 67 0.7× 131 1.4× 36 509

Countries citing papers authored by S. H. McFarlane

Since Specialization
Citations

This map shows the geographic impact of S. H. McFarlane's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. H. McFarlane with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. H. McFarlane more than expected).

Fields of papers citing papers by S. H. McFarlane

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. H. McFarlane. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. H. McFarlane. The network helps show where S. H. McFarlane may publish in the future.

Co-authorship network of co-authors of S. H. McFarlane

This figure shows the co-authorship network connecting the top 25 collaborators of S. H. McFarlane. A scholar is included among the top collaborators of S. H. McFarlane based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. H. McFarlane. S. H. McFarlane is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Magee, C. W., et al.. (1986). The analytical ion accelerator: RBS instrumentation from a surface analyst's perspective. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 15(1-6). 707–711. 4 indexed citations
2.
McFarlane, S. H., et al.. (1978). Etch pits and dislocation in {1012} Czochralski sapphire wafers. Journal of Applied Physics. 49(12). 6171–6172. 1 indexed citations
3.
Levine, Judah, S. H. McFarlane, & Peter Mark. (1977). Si (111) 7 × 7 surface structure: Calculations of LEED intensity and comparison with experiment. Physical review. B, Solid state. 16(12). 5415–5425. 35 indexed citations
4.
Levine, Judah, Peter Mark, & S. H. McFarlane. (1977). Si(111) 7×7 surface structure. Journal of Vacuum Science and Technology. 14(4). 878–882. 13 indexed citations
5.
McFarlane, S. H., H. Kressel, R.V. D'Aiello, & P. H. Robinson. (1977). Dislocations in silicon layers grown on silicon-ribbon substrates. Journal of Applied Physics. 48(8). 3616–3617. 1 indexed citations
6.
Kressel, H., et al.. (1977). Epitaxial silicon solar cells on “ribbon” substrates. Journal of Crystal Growth. 39(1). 23–44. 8 indexed citations
7.
Mark, Peter, Judah Levine, & S. H. McFarlane. (1977). Atomic Structure of the Si(111) 7×7 Surface. Physical Review Letters. 38(24). 1408–1411. 31 indexed citations
8.
McFarlane, S. H., et al.. (1976). Crystal growth and defect characterization of heteroepitaxial III–V semiconductor films. Thin Solid Films. 31(1-2). 3–23. 10 indexed citations
9.
Dougherty, F. C., et al.. (1974). Epitaxial Growth and Properties of GaAs on Magnesium Aluminate Spinel. Journal of The Electrochemical Society. 121(4). 571–571. 10 indexed citations
10.
Ladany, I., et al.. (1974). Two-stage epitaxial growth of GaP on spinel. Journal of Crystal Growth. 24-25. 239–243. 3 indexed citations
11.
Ettenberg, M. & S. H. McFarlane. (1974). Effect of substrate preparation on the smoothness of liquid phase epitaxial (AlGa)As on GaP. Journal of Crystal Growth. 23(3). 233–236. 9 indexed citations
12.
Kressel, H., Peter M. Robinson, R.V. D'Aiello, & S. H. McFarlane. (1974). Properties of high-voltage silicon epitaxial diodes. Journal of Applied Physics. 45(9). 3930–3933. 3 indexed citations
13.
Kressel, H., P. H. Robinson, S. H. McFarlane, R.V. D'Aiello, & Vikram L. Dalal. (1974). Epitaxial silicon p-n junctions on polycrystalline ``ribbon'' substrates. Applied Physics Letters. 25(4). 197–199. 10 indexed citations
14.
Duffy, M. T., et al.. (1973). Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel. Journal of Electronic Materials. 2(2). 359–372. 122 indexed citations
15.
McFarlane, S. H., et al.. (1972). Epitaxial growth and characterization of GaP on insulating substrates. Journal of Crystal Growth. 13-14. 262–267. 19 indexed citations
16.
McFarlane, S. H., et al.. (1972). Lang Topographic Studies of III-V Heteroepitaxial Films Grown on Sapphire and Spinel. Journal of Applied Physics. 43(4). 1724–1732. 19 indexed citations
17.
Kressel, H., N. E. Byer, H. F. Lockwood, et al.. (1970). Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation. Metallurgical Transactions. 1(3). 635–638. 23 indexed citations
18.
Ladany, I., S. H. McFarlane, & S. J. Bass. (1969). Comparison of Liquid-Encapsulated and Solution-Grown Substrates for Efficient GaP Diodes. Journal of Applied Physics. 40(12). 4984–4988. 12 indexed citations
19.
McFarlane, S. H. & C. Elbaum. (1967). Formation of Dislocation Networks in Gallium Single Crystals. Journal of Applied Physics. 38(5). 2024–2029. 2 indexed citations
20.
McFarlane, S. H. & C. Elbaum. (1965). ANOMALOUS TRANSMISSION OF X RAYS IN DISLOCATION-FREE GALLIUM CRYSTALS. Applied Physics Letters. 7(2). 43–44. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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