M. S. Abrahams

2.6k total citations
54 papers, 2.0k citations indexed

About

M. S. Abrahams is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. S. Abrahams has authored 54 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 37 papers in Atomic and Molecular Physics, and Optics and 17 papers in Materials Chemistry. Recurrent topics in M. S. Abrahams's work include Semiconductor materials and interfaces (22 papers), Semiconductor Quantum Structures and Devices (14 papers) and Silicon and Solar Cell Technologies (11 papers). M. S. Abrahams is often cited by papers focused on Semiconductor materials and interfaces (22 papers), Semiconductor Quantum Structures and Devices (14 papers) and Silicon and Solar Cell Technologies (11 papers). M. S. Abrahams collaborates with scholars based in United States and United Kingdom. M. S. Abrahams's co-authors include C. J. Buiocchi, Juliette Blanc, Ronald E. Miller, Leonard R. Weisberg, E. K. Sichel, G.H. Olsen, T.J. Zamerowski, F.D. Rosi, R. Braunstein and J. J. Tietjen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. S. Abrahams

52 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. S. Abrahams United States 23 1.3k 1.2k 763 239 174 54 2.0k
C. J. Buiocchi United States 18 992 0.7× 873 0.7× 575 0.8× 179 0.7× 140 0.8× 31 1.5k
H. Alexander Germany 23 1.4k 1.1× 1.2k 1.0× 1.1k 1.5× 316 1.3× 258 1.5× 80 2.2k
F. C. Unterwald United States 22 917 0.7× 939 0.8× 475 0.6× 159 0.7× 163 0.9× 38 1.5k
K. Weiser United States 21 1.5k 1.2× 615 0.5× 1.2k 1.6× 126 0.5× 140 0.8× 73 2.0k
J. O. McCaldin United States 22 1.3k 0.9× 936 0.8× 704 0.9× 102 0.4× 94 0.5× 78 1.8k
W. C. Dash United States 13 1.3k 0.9× 792 0.7× 825 1.1× 331 1.4× 172 1.0× 17 1.9k
A. Armigliato Italy 23 1.2k 0.9× 737 0.6× 538 0.7× 254 1.1× 215 1.2× 129 1.7k
R. Caruso Argentina 23 997 0.7× 698 0.6× 848 1.1× 148 0.6× 105 0.6× 72 1.8k
B. L. Crowder United States 24 1.5k 1.1× 694 0.6× 841 1.1× 180 0.8× 698 4.0× 41 2.1k
G. A. Rozgonyi United States 23 1.1k 0.8× 622 0.5× 499 0.7× 379 1.6× 109 0.6× 58 1.5k

Countries citing papers authored by M. S. Abrahams

Since Specialization
Citations

This map shows the geographic impact of M. S. Abrahams's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. S. Abrahams with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. S. Abrahams more than expected).

Fields of papers citing papers by M. S. Abrahams

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. S. Abrahams. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. S. Abrahams. The network helps show where M. S. Abrahams may publish in the future.

Co-authorship network of co-authors of M. S. Abrahams

This figure shows the co-authorship network connecting the top 25 collaborators of M. S. Abrahams. A scholar is included among the top collaborators of M. S. Abrahams based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. S. Abrahams. M. S. Abrahams is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Abrahams, M. S. & C. J. Buiocchi. (1988). Nucleation of Precipitates of ZnS and (Zn, Cd)S for Phosphor Synthesis. Journal of The Electrochemical Society. 135(6). 1578–1583. 10 indexed citations
2.
Landsberg, P. T. & M. S. Abrahams. (1985). Tunnel diode theory. Electronics Letters. 21(2). 59–60.
3.
Cullen, G. W., M. S. Abrahams, J. F. Corboy, et al.. (1982). The characterization of heteroepitaxial silicon. Journal of Crystal Growth. 56(2). 281–295. 15 indexed citations
4.
Abrahams, M. S., et al.. (1981). A Note on the Ability of CVD Polysilicon to Deposit Nearly Inaccessible Areas of IC Topology. Journal of The Electrochemical Society. 128(7). 1623–1624. 2 indexed citations
5.
Abrahams, M. S., et al.. (1978). Shear strain at corners and edges of epitaxial silicon on sapphire. Journal of Applied Physics. 49(2). 652–657. 3 indexed citations
6.
Abrahams, M. S., et al.. (1977). Direct Observation of the Structure of Thin, Commercially Useful Silicon on Sapphire Films by Cross Section Transmission Electron Microscopy. Journal of The Electrochemical Society. 124(4). 634–636. 18 indexed citations
7.
Blanc, Juliette & M. S. Abrahams. (1976). Early growth of silicon on sapphire. II. Models. Journal of Applied Physics. 47(12). 5151–5160. 14 indexed citations
8.
Abrahams, M. S. & C. J. Buiocchi. (1974). Cross-sectional specimens for transmission electron microscopy. Journal of Applied Physics. 45(8). 3315–3316. 96 indexed citations
9.
Nuese, C. J., et al.. (1973). Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence. Journal of The Electrochemical Society. 120(7). 956–956. 34 indexed citations
10.
Abrahams, M. S., Juliette Blanc, & C. J. Buiocchi. (1972). Like-sign asymmetric dislocations in zinc-blende structure. Applied Physics Letters. 21(5). 185–186. 111 indexed citations
11.
Rayl, M., Peter J. Wojtowicz, M. S. Abrahams, et al.. (1972). CRITICAL SIZE FOR FERROMAGNETISM IN NICKEL. AIP conference proceedings. 472–476. 1 indexed citations
12.
Kressel, H., N. E. Byer, H. F. Lockwood, et al.. (1970). Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation. Metallurgical Transactions. 1(3). 635–638. 23 indexed citations
13.
Abrahams, M. S. & J. J. Tietjen. (1969). Stacking faults in GaAs1−xPx alloys. Journal of Physics and Chemistry of Solids. 30(10). 2491–2492. 7 indexed citations
14.
Abrahams, M. S., C. J. Buiocchi, & M. D. Coutts. (1968). Improvements to the ALBA Machine for Thinning Specimens for Electron Microscopy. Review of Scientific Instruments. 39(12). 1944–1945. 22 indexed citations
15.
Abrahams, M. S., C. J. Buiocchi, & J. J. Tietjen. (1967). Detection of Selenium Clustering in GaAs by Transmission Electron Microscopy. Journal of Applied Physics. 38(2). 760–764. 40 indexed citations
16.
Abrahams, M. S. & C. J. Buiocchi. (1965). Etching of Dislocations on the Low-Index Faces of GaAs. Journal of Applied Physics. 36(9). 2855–2863. 272 indexed citations
17.
Abrahams, M. S. & Arthur Dreeben. (1965). Formation of Dislocations Around Precipitates in Single Crystals of (Zn,Cd)S:Er. Journal of Applied Physics. 36(5). 1688–1692. 4 indexed citations
18.
Abrahams, M. S.. (1964). Dislocation Etch Pits in GaAs. Journal of Applied Physics. 35(12). 3626–3627. 17 indexed citations
19.
Abrahams, M. S.. (1962). Effects of surface oxygen on the yield drop in InSb. Acta Metallurgica. 10(10). 989–991. 3 indexed citations
20.
Abrahams, M. S., R. Braunstein, & F.D. Rosi. (1959). Thermal, electrical and optical properties of (In,Ga)as alloys. Journal of Physics and Chemistry of Solids. 10(2-3). 204–210. 93 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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