Óscar G. Ossorio

444 total citations
23 papers, 342 citations indexed

About

Óscar G. Ossorio is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Materials Chemistry. According to data from OpenAlex, Óscar G. Ossorio has authored 23 papers receiving a total of 342 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 7 papers in Cellular and Molecular Neuroscience and 4 papers in Materials Chemistry. Recurrent topics in Óscar G. Ossorio's work include Advanced Memory and Neural Computing (22 papers), Ferroelectric and Negative Capacitance Devices (22 papers) and Semiconductor materials and devices (10 papers). Óscar G. Ossorio is often cited by papers focused on Advanced Memory and Neural Computing (22 papers), Ferroelectric and Negative Capacitance Devices (22 papers) and Semiconductor materials and devices (10 papers). Óscar G. Ossorio collaborates with scholars based in Spain, Germany and Estonia. Óscar G. Ossorio's co-authors include Christian Wenger, Eduardo Pérez, Helena Castán, S. Dueñas, Mamathamba Kalishettyhalli Mahadevaiah, H. García, P. Olivo, Daniele Ielmini, Cristian Zambelli and Valerio Milo and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Óscar G. Ossorio

23 papers receiving 339 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Óscar G. Ossorio Spain 10 340 122 50 42 30 23 342
Foroozan Koushan United States 7 357 1.1× 130 1.1× 74 1.5× 77 1.8× 17 0.6× 12 366
Chih-Cheng Chang Taiwan 9 297 0.9× 120 1.0× 54 1.1× 49 1.2× 61 2.0× 21 381
Samuel Aldana Spain 10 288 0.8× 109 0.9× 42 0.8× 33 0.8× 14 0.5× 22 305
Simone Cortese United Kingdom 8 336 1.0× 171 1.4× 31 0.6× 64 1.5× 20 0.7× 8 346
Stefan Wiefels Germany 10 372 1.1× 141 1.2× 66 1.3× 81 1.9× 23 0.8× 28 394
Rainer Waser Germany 9 333 1.0× 155 1.3× 27 0.5× 56 1.3× 19 0.6× 26 343
Desmond JiaJun Loy Singapore 4 307 0.9× 102 0.8× 67 1.3× 77 1.8× 24 0.8× 5 323
N. Ghenzi Argentina 14 367 1.1× 130 1.1× 79 1.6× 90 2.1× 44 1.5× 35 382
Junjie An China 7 308 0.9× 106 0.9× 50 1.0× 67 1.6× 30 1.0× 17 313

Countries citing papers authored by Óscar G. Ossorio

Since Specialization
Citations

This map shows the geographic impact of Óscar G. Ossorio's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Óscar G. Ossorio with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Óscar G. Ossorio more than expected).

Fields of papers citing papers by Óscar G. Ossorio

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Óscar G. Ossorio. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Óscar G. Ossorio. The network helps show where Óscar G. Ossorio may publish in the future.

Co-authorship network of co-authors of Óscar G. Ossorio

This figure shows the co-authorship network connecting the top 25 collaborators of Óscar G. Ossorio. A scholar is included among the top collaborators of Óscar G. Ossorio based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Óscar G. Ossorio. Óscar G. Ossorio is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
García, H., Óscar G. Ossorio, Mireia Bargalló González, et al.. (2023). Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices. 1–4. 1 indexed citations
2.
Ossorio, Óscar G., H. García, S. Dueñas, et al.. (2021). Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications. ECS Transactions. 102(2). 29–35. 2 indexed citations
3.
García, H., Óscar G. Ossorio, S. Dueñas, et al.. (2021). Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices. Electronics. 10(22). 2816–2816. 16 indexed citations
4.
Ossorio, Óscar G., H. García, S. Dueñas, et al.. (2021). Performance Assessment of Amorphous HfO 2 -Based RRAM Devices for Neuromorphic Applications. ECS Journal of Solid State Science and Technology. 10(8). 83002–83002. 5 indexed citations
5.
Milo, Valerio, Cristian Zambelli, Eduardo Pérez, et al.. (2021). Optimized programming algorithms for multilevel RRAM in hardware neural networks. UVaDOC UVaDOC University of Valladolid Documentary Repository (University of Valladolid). 1–6. 22 indexed citations
6.
García, H., Óscar G. Ossorio, Helena Castán, et al.. (2021). Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge. Solid-State Electronics. 183. 108113–108113. 8 indexed citations
7.
Ossorio, Óscar G., H. García, S. Dueñas, et al.. (2021). Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications. Solid-State Electronics. 186. 108114–108114. 4 indexed citations
8.
Dueñas, S., Helena Castán, Óscar G. Ossorio, et al.. (2020). Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films. ECS Transactions. 97(1). 3–6. 1 indexed citations
9.
García, H., Óscar G. Ossorio, S. Dueñas, & Helena Castán. (2020). (Invited) Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications. ECS Transactions. 97(1). 17–20. 1 indexed citations
10.
García, H., S. Dueñas, Óscar G. Ossorio, & Helena Castán. (2020). Current Pulses to Control the Conductance in RRAM Devices. IEEE Journal of the Electron Devices Society. 8. 291–296. 18 indexed citations
11.
Ossorio, Óscar G., et al.. (2020). Single and complex devices on three topological configurations of HfO2 based RRAM. UVaDOC UVaDOC University of Valladolid Documentary Repository (University of Valladolid). 1–4. 3 indexed citations
12.
Pérez, Eduardo, Óscar G. Ossorio, S. Dueñas, et al.. (2020). Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays. Electronics. 9(5). 864–864. 33 indexed citations
13.
Zanotti, Tommaso, Cristian Zambelli, Francesco Maria Puglisi, et al.. (2020). Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays. IEEE Transactions on Electron Devices. 67(11). 4611–4615. 13 indexed citations
14.
Ossorio, Óscar G., Eduardo Pérez, S. Dueñas, et al.. (2019). Effective Reduction of the Programing Pulse Width in Al: HfO2-based RRAM Arrays. UVaDOC UVaDOC University of Valladolid Documentary Repository (University of Valladolid). 1–4. 1 indexed citations
15.
García, H., Óscar G. Ossorio, S. Dueñas, & Helena Castán. (2019). Controlling the intermediate conductance states in RRAM devices for synaptic applications. Microelectronic Engineering. 215. 110984–110984. 12 indexed citations
16.
Dueñas, S., Helena Castán, Óscar G. Ossorio, & H. García. (2019). Dynamics of set and reset processes on resistive switching memories. Microelectronic Engineering. 216. 111032–111032. 10 indexed citations
17.
Castán, Helena, S. Dueñas, H. García, et al.. (2018). Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters. Journal of Applied Physics. 124(15). 14 indexed citations
18.
Dueñas, S., Helena Castán, H. García, et al.. (2018). The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications. Journal of Electronic Materials. 47(9). 4938–4943. 2 indexed citations
19.
Ossorio, Óscar G., et al.. (2018). Resistive Switching Properties of Atomic Layer Deposited ZrO<inf>2</inf>-HfO<inf>2</inf> Thin Films. UVaDOC UVaDOC University of Valladolid Documentary Repository (University of Valladolid). 105. 1–4. 1 indexed citations
20.
Dueñas, S., et al.. (2017). Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices. IEEE Electron Device Letters. 38(9). 1216–1219. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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