H. C. Mogul

2.0k total citations
35 papers, 1.6k citations indexed

About

H. C. Mogul is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, H. C. Mogul has authored 35 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 9 papers in Computational Mechanics. Recurrent topics in H. C. Mogul's work include Semiconductor materials and devices (18 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers) and Copper Interconnects and Reliability (9 papers). H. C. Mogul is often cited by papers focused on Semiconductor materials and devices (18 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers) and Copper Interconnects and Reliability (9 papers). H. C. Mogul collaborates with scholars based in United States and Japan. H. C. Mogul's co-authors include J. W. McPherson, A. Shanware, Jin‐Young Kim, A. J. Steckl, J. Rodriguez, Steven W. Novak, J. Antonio Travieso-Rodríguez, E.T. Ogawa, Richard F. Haglund and R. A. Zuhr and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

H. C. Mogul

35 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. C. Mogul United States	15	1.3k	636	344	340	138	35	1.6k
Takashi Hirao Japan	24	1.6k 1.2×	1.1k 1.7×	193 0.6×	156 0.5×	226 1.6×	141	1.9k
Y. Kurata Japan	21	1.2k 0.9×	1.1k 1.7×	202 0.6×	91 0.3×	118 0.9×	67	1.4k
Hosun Lee South Korea	20	1.2k 0.9×	1.4k 2.1×	346 1.0×	316 0.9×	214 1.6×	106	1.8k
Yu-Ming Huang Taiwan	19	766 0.6×	438 0.7×	194 0.6×	133 0.4×	144 1.0×	48	1.1k
Pratima Agarwal India	16	757 0.6×	582 0.9×	118 0.3×	77 0.2×	101 0.7×	102	962
Jyh‐Jier Ho Taiwan	17	715 0.5×	406 0.6×	285 0.8×	92 0.3×	90 0.7×	67	917
H.B. Harrison Australia	22	2.1k 1.6×	440 0.7×	316 0.9×	323 0.9×	722 5.2×	109	2.3k
Philip Tanner Australia	22	1.5k 1.1×	451 0.7×	417 1.2×	344 1.0×	297 2.2×	91	1.8k
Jouko Vähäkangas Finland	17	744 0.6×	620 1.0×	383 1.1×	78 0.2×	165 1.2×	55	1.2k
A. Shanware United States	13	1.3k 1.0×	530 0.8×	188 0.5×	217 0.6×	105 0.8×	25	1.5k

Countries citing papers authored by H. C. Mogul

Since Specialization

Citations

This map shows the geographic impact of H. C. Mogul's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. C. Mogul with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. C. Mogul more than expected).

Fields of papers citing papers by H. C. Mogul

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. C. Mogul. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. C. Mogul. The network helps show where H. C. Mogul may publish in the future.

Co-authorship network of co-authors of H. C. Mogul

This figure shows the co-authorship network connecting the top 25 collaborators of H. C. Mogul. A scholar is included among the top collaborators of H. C. Mogul based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. C. Mogul. H. C. Mogul is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Mogul, H. C., et al.. (2005). Characterization of Defect Formation during Ni Silicidation for CMOS Device Application. Microscopy and Microanalysis. 11(S02). 6 indexed citations

McPherson, J. W., et al.. (2003). Proposed universal relationship between dielectric breakdown and dielectric constant. 633–636. 79 indexed citations

McPherson, J. W., Jin‐Young Kim, A. Shanware, H. C. Mogul, & J. Rodriguez. (2003). Trends in the ultimate breakdown strength of high dielectric-constant materials. IEEE Transactions on Electron Devices. 50(8). 1771–1778. 300 indexed citations

McPherson, J. W., et al.. (2003). Thermochemical description of dielectric breakdown in high dielectric constant materials. Applied Physics Letters. 82(13). 2121–2123. 327 indexed citations

Mogul, H. C., Andrew Marshall, & S. Natarajan. (2002). Designing with partially depleted SOI. P31–P34. 1 indexed citations

Mogul, H. C., et al.. (1998). Electrical and physical characterization of deuterium sinter on submicron devices. Applied Physics Letters. 72(14). 1721–1723. 25 indexed citations

McPherson, J. W. & H. C. Mogul. (1998). Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films. Journal of Applied Physics. 84(3). 1513–1523. 389 indexed citations

McPherson, J. W., et al.. (1997). Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics. Applied Physics Letters. 71(8). 1101–1103. 49 indexed citations

Mogul, H. C., et al.. (1997). Antenna damage analysis and reduction in multi-level metal processing.. 502–504. 1 indexed citations

10.

Mogul, H. C., et al.. (1997). Advantages of LDD-only implanted fluorine with submicron CMOS technologies. IEEE Transactions on Electron Devices. 44(3). 388–394. 6 indexed citations

11.

Steckl, A. J., et al.. (1994). Crystallinity and Photoluminescence in Stain‐Etched Porous Si. Journal of The Electrochemical Society. 141(3). 674–679. 11 indexed citations

12.

Mogul, H. C. & A. J. Steckl. (1993). Rapid thermal annealing effects on Si p/sup +/-n junctions fabricated by low-energy FIB Ga/sup +/ implantation. IEEE Electron Device Letters. 14(3). 123–125. 5 indexed citations

13.

Steckl, A. J., et al.. (1993). Doping-induced selective area photoluminescence in porous silicon. Applied Physics Letters. 62(16). 1982–1984. 37 indexed citations

14.

Mogul, H. C., A. J. Steckl, & Steven W. Novak. (1993). Shallow Si p+-n junctions fabricated by focused ion beam Ga+ implantation through thin Ti and TiSi2 layers. Journal of Applied Physics. 74(4). 2318–2322. 51 indexed citations

15.

Steckl, A. J., et al.. (1993). Photoluminescence of Chemically Etched Polycrystalline and Amorphous Si Thin Films. MRS Proceedings. 298. 1 indexed citations

16.

Mogul, H. C., A. J. Steckl, & E. Ganin. (1993). Electrical properties of Si p/sup +/-n junctions for sub-0.25 mu m CMOS fabricated by Ga FIB implantation. IEEE Transactions on Electron Devices. 40(10). 1823–1829. 6 indexed citations

17.

Steckl, A. J., et al.. (1992). Localized fabrication of Si nanostructures by focused ion beam implantation. Applied Physics Letters. 60(15). 1833–1835. 37 indexed citations

18.

Steckl, A. J., H. C. Mogul, Steven W. Novak, & C. W. Magee. (1991). Low energy off-axis focused ion beam Ga+ implantation into Si. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(6). 2916–2919. 9 indexed citations

19.

Haglund, Richard F., H. C. Mogul, R. A. Weeks, & R. A. Zuhr. (1991). Changes in the refractive index of fused silica due to implantation of transition-metal ions. Journal of Non-Crystalline Solids. 130(3). 326–331. 16 indexed citations

20.

Steckl, A. J., H. C. Mogul, & Saad Mogren. (1990). Ultrashallow Si p+–n junction fabrication by low energy Ga+ focused ion beam implantation. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(6). 1937–1940. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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