G. Götz

1.3k total citations
81 papers, 1.0k citations indexed

About

G. Götz is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Götz has authored 81 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 42 papers in Computational Mechanics and 24 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Götz's work include Ion-surface interactions and analysis (34 papers), Silicon and Solar Cell Technologies (33 papers) and Integrated Circuits and Semiconductor Failure Analysis (27 papers). G. Götz is often cited by papers focused on Ion-surface interactions and analysis (34 papers), Silicon and Solar Cell Technologies (33 papers) and Integrated Circuits and Semiconductor Failure Analysis (27 papers). G. Götz collaborates with scholars based in Germany, France and Belarus. G. Götz's co-authors include W. Wesch, E. Wendler, H.‐D. Geiler, E. Glaser, K. Gärtner, Timo Kuschel, H. Fischer, Bernd Gruska, Günter Reiss and Н. А. Соболев and has published in prestigious journals such as Physical Review Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

G. Götz

77 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Götz Germany 19 733 482 387 303 86 81 1.0k
D. Fathy United States 17 1.1k 1.5× 387 0.8× 371 1.0× 489 1.6× 43 0.5× 48 1.4k
B.J. Sealy United Kingdom 17 836 1.1× 236 0.5× 424 1.1× 509 1.7× 48 0.6× 111 1.1k
G. Vitali Italy 18 730 1.0× 414 0.9× 195 0.5× 533 1.8× 118 1.4× 89 1.1k
S. Rigo France 19 1.0k 1.4× 279 0.6× 148 0.4× 627 2.1× 124 1.4× 75 1.4k
I. H. Wilson Hong Kong 16 396 0.5× 362 0.8× 263 0.7× 451 1.5× 85 1.0× 78 911
A. H. van Ommen Netherlands 21 711 1.0× 326 0.7× 753 1.9× 278 0.9× 60 0.7× 40 1.1k
S. D. Ferris United States 12 544 0.7× 299 0.6× 270 0.7× 327 1.1× 100 1.2× 20 975
G. J. Galvin United States 9 475 0.6× 348 0.7× 148 0.4× 404 1.3× 44 0.5× 16 836
Y. E. Strausser United States 16 691 0.9× 224 0.5× 367 0.9× 383 1.3× 123 1.4× 35 1.0k
M. Voelskow Germany 18 918 1.3× 200 0.4× 286 0.7× 621 2.0× 76 0.9× 124 1.2k

Countries citing papers authored by G. Götz

Since Specialization
Citations

This map shows the geographic impact of G. Götz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Götz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Götz more than expected).

Fields of papers citing papers by G. Götz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Götz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Götz. The network helps show where G. Götz may publish in the future.

Co-authorship network of co-authors of G. Götz

This figure shows the co-authorship network connecting the top 25 collaborators of G. Götz. A scholar is included among the top collaborators of G. Götz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Götz. G. Götz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Götz, G., et al.. (2018). Preferential weakening of rotational magnetic anisotropy by keV-He ion bombardment in polycrystalline exchange bias layer systems. Kobra (Universitätsbibliothek Kassel). 12 indexed citations
2.
Kuschel, Timo, Christoph Klewe, J. Schmalhorst, et al.. (2015). Static Magnetic Proximity Effect inPt/NiFe2O4andPt/FeBilayers Investigated by X-Ray Resonant Magnetic Reflectivity. Physical Review Letters. 115(9). 97401–97401. 59 indexed citations
3.
Müller, Philipp, W. Wesch, П. И. Гайдук, et al.. (1993). Low temperature recrystallization of ion implanted InP. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 80-81. 721–725. 6 indexed citations
4.
Wendler, E., W. Wesch, & G. Götz. (1991). Radiation damage and optical properties of Ar+-implanted GaP. Journal of Applied Physics. 70(1). 144–149. 13 indexed citations
5.
Gärtner, K., et al.. (1989). Ion Implanted Buried Si3N4 Layers below Epitaxial NSi2 Layers. physica status solidi (a). 112(2). 733–738. 1 indexed citations
6.
Geiler, H.‐D., et al.. (1989). Explosive crystallization phenomena in SOI structures. Applied Surface Science. 36(1-4). 632–639. 1 indexed citations
7.
Götz, G., et al.. (1988). High energy ion beam analysis of solids. Akademie Verlag eBooks. 36 indexed citations
8.
Andrä, W., et al.. (1988). IR and RBS spectroscopy investigation of semi-insulating phosphorus-doped polycrystalline silicon layers. physica status solidi (a). 110(1). 181–187. 3 indexed citations
9.
Andrä, W., et al.. (1988). Composition dependence of magnetization of ion implanted cobalt layers. physica status solidi (a). 106(2). 589–594. 1 indexed citations
10.
Wendler, E., W. Wesch, & G. Götz. (1986). Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAs. physica status solidi (a). 93(1). 207–212. 21 indexed citations
11.
Götz, G., et al.. (1984). Crystallization of high-dose antimony-implanted silicon by millisecond pulse laser irradiation. physica status solidi (a). 83(1). 69–76. 1 indexed citations
12.
Andrä, G., et al.. (1982). Explosive Liquid-Phase Crystallization of Thin Silicon Films during Pulse Heating. physica status solidi (a). 74(2). 511–515. 18 indexed citations
13.
Двуреченский, А. В., et al.. (1981). Influence of the thickness of damaged layers on the migration of dopands during laser annealing in implanted silicon. physica status solidi (a). 63(2). K203–K206. 2 indexed citations
14.
Götz, G., et al.. (1981). Radiation damage and refractive index of ion-implanted LiNbO3. Nuclear Instruments and Methods. 182-183. 777–780. 27 indexed citations
15.
Wesch, W., et al.. (1981). Correlation between structural defects and optical properties in ion-implanted silicon. physica status solidi (a). 65(1). 225–232. 11 indexed citations
16.
Gruska, Bernd & G. Götz. (1981). Depth profiling of extended defects in silicon by Rutherford backscattering measurements. physica status solidi (a). 67(1). 129–139. 6 indexed citations
17.
Wesch, W. & G. Götz. (1980). Influence of ion implantation on the optical properties of silicon. Radiation Effects. 49(1-3). 137–140. 14 indexed citations
18.
Götz, G. & Gerald Sommer. (1979). Location of self-interstitial atoms in boron-implanted silicon by means of rutherford backscattering of channelled ions. Radiation Effects. 41(4). 195–202. 5 indexed citations
19.
Götz, G., et al.. (1975). Investigation of radiation damage in silicon by a backscattering method. Radiation Effects. 25(1). 27–32. 2 indexed citations
20.
Götz, G., et al.. (1972). [Survey of the color of the natural teeth in the population of Hungary].. PubMed. 65(10). 312–5. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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