H.‐D. Geiler

441 total citations
42 papers, 346 citations indexed

About

H.‐D. Geiler is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Mechanics of Materials. According to data from OpenAlex, H.‐D. Geiler has authored 42 papers receiving a total of 346 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 18 papers in Computational Mechanics and 16 papers in Mechanics of Materials. Recurrent topics in H.‐D. Geiler's work include Laser Material Processing Techniques (15 papers), Silicon and Solar Cell Technologies (11 papers) and Thermography and Photoacoustic Techniques (11 papers). H.‐D. Geiler is often cited by papers focused on Laser Material Processing Techniques (15 papers), Silicon and Solar Cell Technologies (11 papers) and Thermography and Photoacoustic Techniques (11 papers). H.‐D. Geiler collaborates with scholars based in Germany, France and Canada. H.‐D. Geiler's co-authors include G. Götz, E. Glaser, Matthias Wagner, G. Andrä, K. Hehl, D. Stock, M. Jurisch, Marvin R Paulsen, E. Daub and U. Just and has published in prestigious journals such as Journal of Applied Physics, Applied Surface Science and Surface and Coatings Technology.

In The Last Decade

H.‐D. Geiler

37 papers receiving 313 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H.‐D. Geiler Germany 11 203 160 136 81 75 42 346
Kenkichi Suzuki Japan 8 189 0.9× 160 1.0× 161 1.2× 93 1.1× 47 0.6× 23 318
Kazuo Moriya Japan 9 211 1.0× 128 0.8× 78 0.6× 123 1.5× 47 0.6× 17 379
Mark A. Crowder United States 9 332 1.6× 222 1.4× 104 0.8× 96 1.2× 22 0.3× 17 399
O. Yavaş Japan 12 141 0.7× 116 0.7× 264 1.9× 140 1.7× 110 1.5× 18 387
R.N. Tarrant Australia 13 114 0.6× 259 1.6× 64 0.5× 49 0.6× 280 3.7× 21 368
CHARLES A. HEWETT United States 13 258 1.3× 258 1.6× 100 0.7× 55 0.7× 115 1.5× 37 418
S. Kouteva-Arguirova Germany 9 117 0.6× 165 1.0× 200 1.5× 132 1.6× 103 1.4× 17 341
S. Petzoldt Germany 6 60 0.3× 60 0.4× 238 1.8× 116 1.4× 177 2.4× 8 324
Xiaochang Ni China 11 71 0.3× 74 0.5× 248 1.8× 124 1.5× 226 3.0× 31 380
P. A. Pivovarov Russia 12 78 0.4× 162 1.0× 205 1.5× 176 2.2× 144 1.9× 59 394

Countries citing papers authored by H.‐D. Geiler

Since Specialization
Citations

This map shows the geographic impact of H.‐D. Geiler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.‐D. Geiler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.‐D. Geiler more than expected).

Fields of papers citing papers by H.‐D. Geiler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.‐D. Geiler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.‐D. Geiler. The network helps show where H.‐D. Geiler may publish in the future.

Co-authorship network of co-authors of H.‐D. Geiler

This figure shows the co-authorship network connecting the top 25 collaborators of H.‐D. Geiler. A scholar is included among the top collaborators of H.‐D. Geiler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.‐D. Geiler. H.‐D. Geiler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Geiler, H.‐D., et al.. (2013). Characterization of bonded wafer stacks by use of the photoelastic-analysis-method. Microsystem Technologies. 19(5). 697–703. 5 indexed citations
2.
Geiler, H.‐D., et al.. (2008). Laser-induced defect creation in 300 mm SOI-wafer analyzed by use of photoelastic imaging. Journal of Materials Science Materials in Electronics. 19(S1). 135–139.
3.
Geiler, H.‐D.. (2008). Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing. Materials science forum. 573-574. 237–256. 1 indexed citations
4.
Geiler, H.‐D., et al.. (2006). Photoelastic characterization of residual stress in GaAs-wafers. Materials Science in Semiconductor Processing. 9(1-3). 345–350. 17 indexed citations
5.
Geiler, H.‐D., et al.. (2002). Photoelastic stress evaluation and defect monitoring in 300-mm-wafer manufacturing. Materials Science in Semiconductor Processing. 5(4-5). 445–455. 12 indexed citations
6.
Geiler, H.‐D., et al.. (2002). Detection and analysis of crystal defects in silicon by scanning infrared depolarization and photoluminescence heterodyne techniques. Materials Science and Engineering B. 91-92. 46–50. 13 indexed citations
7.
8.
Geiler, H.‐D., et al.. (1999). Photoelastic Imaging of Process Induced Defects in 300mm-Silicon Wafers. MRS Proceedings. 591. 11 indexed citations
9.
Geiler, H.‐D., et al.. (1997). Analysis of subsurface damage in silicon by a combined photothermal and photoluminescence heterodyne measurement. Journal of Applied Physics. 81(11). 7548–7551. 3 indexed citations
10.
Lugscheider, E., et al.. (1996). Investigation of thermophysical properties of AIP coated cutting tools for dry machining. Surface and Coatings Technology. 86-87. 803–808. 7 indexed citations
11.
Just, U., et al.. (1995). Analysis of siloxane pyrolysis products by cryo-GC/FT-IR and GC/MS. Analytical and Bioanalytical Chemistry. 352(5). 515–520. 9 indexed citations
12.
Geiler, H.‐D.. (1994). Nondestructive and Contactless Evaluation of Electrical and Thermal Properties of Thin Semiconducting Layers. Materials science forum. 173-174. 265–272. 1 indexed citations
13.
Geiler, H.‐D., et al.. (1991). Single-beam thermowave analysis of semiconductors. Applied Surface Science. 50(1-4). 373–376. 6 indexed citations
14.
Geiler, H.‐D., et al.. (1989). Explosive crystallization phenomena in SOI structures. Applied Surface Science. 36(1-4). 632–639. 1 indexed citations
15.
Witzmann, A., et al.. (1989). Formation of p-n junctions and silicides in silicon using a high performance laser beam homogenization system. Applied Surface Science. 43(1-4). 260–263. 4 indexed citations
16.
Geiler, H.‐D., et al.. (1989). Explosive crystallization phenomena in SOI structures. Journal of materials research/Pratt's guide to venture capital sources. 4(6). 1473–1479.
17.
Geiler, H.‐D., K. Hehl, & D. Stock. (1982). A Model of Energy Deposition into Semiconductors during Laser Annealing. physica status solidi (a). 73(1). K57–K62. 4 indexed citations
18.
Andrä, G., et al.. (1982). Explosive Liquid-Phase Crystallization of Thin Silicon Films during Pulse Heating. physica status solidi (a). 74(2). 511–515. 18 indexed citations
19.
Geiler, H.‐D., et al.. (1982). Pd-silicide reactions induced by a millisecond laser pulse. physica status solidi (a). 70(2). K159–K162. 1 indexed citations
20.
Двуреченский, А. В., et al.. (1981). Influence of the thickness of damaged layers on the migration of dopands during laser annealing in implanted silicon. physica status solidi (a). 63(2). K203–K206. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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