G. Janßen

1.1k total citations
38 papers, 872 citations indexed

About

G. Janßen is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, G. Janßen has authored 38 papers receiving a total of 872 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Atomic and Molecular Physics, and Optics, 20 papers in Electrical and Electronic Engineering and 16 papers in Materials Chemistry. Recurrent topics in G. Janßen's work include Diamond and Carbon-based Materials Research (15 papers), Semiconductor Quantum Structures and Devices (12 papers) and Semiconductor Lasers and Optical Devices (8 papers). G. Janßen is often cited by papers focused on Diamond and Carbon-based Materials Research (15 papers), Semiconductor Quantum Structures and Devices (12 papers) and Semiconductor Lasers and Optical Devices (8 papers). G. Janßen collaborates with scholars based in Netherlands, Germany and United States. G. Janßen's co-authors include L.J. Giling, W.J.P. van Enckevort, W. Vollenberg, J.J. Schermer, M. Seal, Stan Van Uum, Fedde van der Graaf, F.‐J. Tegude, U. Auer and Eric P. Visser and has published in prestigious journals such as Journal of Applied Physics, IEEE Journal of Solid-State Circuits and Journal of Physics Condensed Matter.

In The Last Decade

G. Janßen

36 papers receiving 823 citations

Peers

G. Janßen

EEE

AMPO

GEOPH

Ulrich M. Scheven United States

U. J. Winter Germany

S. Hussain Pakistan

Seiji Shimizu Japan

Claudio I. Zanelli United States

M. Huberman United States

J. S. Lash United States

P.H. Woerlee Netherlands

Raju Khanal Nepal

Mario Reiser Germany

Ulrich M. Scheven United States

G. Janßen

92 ×0.2

87 ×0.3

29 ×0.1

EEE

92 ×0.4

AMPO

62 ×0.3

GEOPH

Citations per year, relative to G. Janßen G. Janßen (= 1×) peers Ulrich M. Scheven

Countries citing papers authored by G. Janßen

Since Specialization

Citations

This map shows the geographic impact of G. Janßen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Janßen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Janßen more than expected).

Fields of papers citing papers by G. Janßen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Janßen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Janßen. The network helps show where G. Janßen may publish in the future.

Co-authorship network of co-authors of G. Janßen

This figure shows the co-authorship network connecting the top 25 collaborators of G. Janßen. A scholar is included among the top collaborators of G. Janßen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Janßen. G. Janßen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Dijk, Jan van, et al.. (2006). A microwave plasma model for a PCVD setup. Journal of Physics D Applied Physics. 39(12). 2553–2564. 9 indexed citations

Janßen, G., et al.. (2003). InGaAs PIN detectors for frequencies above 100 GHz. 36. 673–676. 4 indexed citations

Prost, W., U. Auer, C. Pacha, et al.. (2002). InP-based HFETs and RTDs for high speed digital circuitry. 45–49. 4 indexed citations

Janßen, G., et al.. (2002). On the applicability of the transimpedance amplifier concept for 40 Gb/s optoelectronic receivers based on InAlAs/InGaAs heterostructure field effect transistors. 215–218. 3 indexed citations

Janßen, G., Stefan van Waasen, U. Auer, et al.. (2002). 10 Gb/s low-noise transimpedance amplifier for optoelectronic receivers based on InAlAs/InGaAs/InP HEMTs. 62–67. 1 indexed citations

Janßen, G., et al.. (2002). On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuits. 176–181.

Prost, W., et al.. (2000). Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes. International Journal of Circuit Theory and Applications. 28(6). 537–552. 43 indexed citations

Janßen, G., et al.. (1998). NAND/NOR logic circuit using single InP-based RTBT. Electronics Letters. 34(25). 2390–2392. 2 indexed citations

Janßen, G., et al.. (1998). InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport. Journal of Crystal Growth. 195(1-4). 117–123. 7 indexed citations

10.

Bach, H.‐G., A. Umbach, G. Unterbörsch, et al.. (1996). Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1. 133–136. 1 indexed citations

11.

Auer, U., et al.. (1996). A novel 3-D integrated HFET/RTD frequency multiplier. IEEE Journal of Selected Topics in Quantum Electronics. 2(3). 650–654. 16 indexed citations

12.

Enckevort, W.J.P. van, G. Janßen, W. Vollenberg, & L.J. Giling. (1995). Anisotropy in monocrystalline CVD diamond growth III. Surface morphology of hot filament grown films deposited on planar substrates. Journal of Crystal Growth. 148(4). 365–382. 27 indexed citations

13.

Schermer, J.J., et al.. (1993). Controlled deposition of diamond from an acetylene-oxygen combustion flame. Diamond and Related Materials. 2(8). 1149–1155. 55 indexed citations

14.

Enckevort, W.J.P. van, G. Janßen, W. Vollenberg, et al.. (1993). CVD diamond growth mechanisms as identified by surface topography. Diamond and Related Materials. 2(5-7). 997–1003. 78 indexed citations

15.

Janßen, G., et al.. (1991). Rapid growth of single-crystal diamond on diamond substrates. Surface and Coatings Technology. 47(1-3). 113–126. 22 indexed citations

16.

Enckevort, W.J.P. van, et al.. (1991). Thermal chemical vapour deposition of homoepitaxial diamond: dependence of surface morphology and defect structure on substrate orientation. Surface and Coatings Technology. 47(1-3). 39–50. 35 indexed citations

17.

Enckevort, W.J.P. van, G. Janßen, & L.J. Giling. (1991). Anisotropy in monocrystalline CVD diamond growth I. A sphere growth experiment. Journal of Crystal Growth. 113(1-2). 295–304. 29 indexed citations

18.

Janßen, G., et al.. (1990). Rapid single crystalline diamond growth by acetylene-oxygen flame deposition. Journal of Crystal Growth. 104(3). 752–757. 46 indexed citations

19.

Sark, Wilfried van, G. Janßen, M.H.J.M. de Croon, & L.J. Giling. (1990). Analytical models for growth by metal organic vapour phase epitaxy: I. Isothermal models. Semiconductor Science and Technology. 5(1). 16–35. 14 indexed citations

20.

Sark, Wilfried van, M.H.J.M. de Croon, G. Janßen, & L.J. Giling. (1990). Analytical models for growth by metal organic vapour phase epitaxy: II. Influence of temperature gradient. Semiconductor Science and Technology. 5(1). 36–44. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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