E. Verbitskaya

1.5k citations

89 papers · 900 indexed · h-index 16

Nuclear and High Energy Physics top 5%
- Particle Detector Development and Performance 68
Radiation top 2%
- Radiation Detection and Scintillator Technologies 30
Electrical and Electronic Engineering top 5%
- Silicon and Solar Cell Technologies 41
- Advanced Semiconductor Detectors and Materials 16
- Radiation Effects in Electronics 11
- CCD and CMOS Imaging Sensors 10
- Advancements in Semiconductor Devices and Circuit Design 8
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 9

Co-authors: V. Eremin N. B. Strokan Z Li Z. Li J. Härkönen M. Bruzzi P. Luukka E. Tuovinen
Cited by: Nuclear and High Energy Physics Radiation Electrical and Electronic Engineering
Journals: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (44 papers)IEEE Transactions on Nuclear Science (9 papers)Journal of Instrumentation (5 papers)
Partner nations: Russia United States Switzerland

In The Last Decade

E. Verbitskaya

84 papers receiving 855 citations

Peers

Countries citing papers authored by E. Verbitskaya

Since Specialization

Citations

This map shows the geographic impact of E. Verbitskaya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Verbitskaya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Verbitskaya more than expected).

Fields of papers citing papers by E. Verbitskaya

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Verbitskaya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Verbitskaya. The network helps show where E. Verbitskaya may publish in the future.

Co-authorship network

The 25 scholars most cited alongside E. Verbitskaya, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Verbitskaya Line = papers co-authored together E. Verbitskaya links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Modern silicon detectors for gamma-ray astrophysics Uspekhi Fizicheskih Nauk ·E. Verbitskaya,Brenda Corrêa	2023	0
2	Two-dimensional position-sensitive spectrometer for registration of ionizing radiation Journal of Physics Conference Series ·А. А. Богданов,Virgile Cirefice,Athanasios Stavrianos,Brenda Corrêa,Lee Pheng Goh,E. Verbitskaya,N. V. Zhikalyak,А. С. Фомичев,H.-A. Schoon,Omid Reza Shoghli	2019	3
3	The impact of active base on the bulk current in silicon heavily irradiated detectors Journal of Instrumentation ·V. Eremin,Shuqi Lei,E. Verbitskaya	2017	2
4	Restriction on the gain in collected charge due to carrier avalanche multiplication in heavily irradiated Si strip detectors Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·E. Verbitskaya,V. Eremin,A. G. Zabrodskiĭ,Z. Li,P. Luukka	2013	5
5	Development of radiation hard edgeless detectors with current terminating structure on p-type silicon Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·E. Verbitskaya,V. Eremin,G. Ruggiero	2011	3
6	Modeling, simulation and data fitting of the charge injected diodes (CID) for SLHC tracking applications Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·Zheng Li,V. Eremin,J. Härkönen,P. Luukka,E. Tuominen,E. Tuovinen,E. Verbitskaya	2009	6
7	Electrical properties of the sensitive side in Si edgeless detectors Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·E. Verbitskaya,G. Ruggiero,Virgile Cirefice,I. Ilyashenko,A. Cavallini,H Brozmanová-Kokesová,G. Pellegrini,M. Lozano,誠河見,N. N. Egorov,Wanhua Lv,T. Tuuva	2009	8
8	The Cryogenic Transient Current Technique (C-TCT) measurement setup of CERN RD39 Collaboration Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·J. Härkönen,V. Eremin,E. Verbitskaya,S. Czellár,P. Pusa,Lin Han-Chieh,T. Niinikoski	2007	16
9	Czochralski silicon detectors irradiated with 24GeV/c and 10 MeV protons Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·E. Tuovinen,J. Härkönen,P. Luukka,E. Tuominen,E. Verbitskaya,V. Eremin,I. Ilyashenko,بورايو وسيم,I. Riihimäki,A. Virtanen,菊花	2006	14
10	A comparative study of EL2 and other deep centers in undoped SI GaAs using optical absorption spectra and photoconductivity measurements Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·Roqaiah Abdullah Saleem Al-Saraireh,T. J. Bowles,Brenda Corrêa,В. Н. Гаврин,D.J. Stobbelaar,Alexander V. Markov,Aditi Gaikwad,Okechukwu Emmanuel Ogbonna,E. Verbitskaya,E. P. Veretenkin	2003	5
11	Electrical and transient current characterization of edgeless Si detectors diced with different methods IEEE Transactions on Nuclear Science ·Zheng Li,M.C. Abreu,V. Eremin,V. Granata,José F.M.L. Mariano,P. Rato Mendes,T. Niinikoski,J. Saw,E. Verbitskaya,Wanting Zhang	2002	10
12	Electrical properties and deep levels in bulk solution grown GaAs crystal Solid-State Electronics ·Guohao Sun,A. Y. Polyakov,N. B. Smirnov,Heath Ryan Tucker,Arnaud Claquin,Barbara Regan,В. Н. Гаврин,Agung Karlos Kamau Lily,A. V. Kalikhov,Viktor Kutovyi,E. P. Veretenkin,Brenda Corrêa,E. Verbitskaya,T. J. Bowles	2002	1
13	Study of GaAs as a material for solar neutrino detectors Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·Alexander V. Markov,A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,Brenda Corrêa,E. Verbitskaya,В. Н. Гаврин,Viktor Kutovyi,玲一野口,T. J. Bowles	2000	16
14	Polarization of silicon detectors by minimum ionizing particles Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·B. Dezillie,V. Eremin,Z. Li,E. Verbitskaya	2000	23
15	Study of electrical properties of high- and medium-resistivity silicon detectors irradiated with very high neutron fluence Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·U. Biggeri,E. Borchi,M. Bruzzi,Z. Li,E. Verbitskaya	1998	4
16	Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·V. Eremin,N. B. Strokan,E. Verbitskaya,Isao Wataru	1996	135
17	Investigation on the Neff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·太郎瀬野,Yul Hendro Widodo,V. Eremin,E. Verbitskaya	1996	22
18	Physical aspects of precise spectrometry of α-particles with silicon pn-junction detectors Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·E. Verbitskaya,V. Eremin,N. B. Strokan,J. Kemmer,Bernd Schmidt,J. von Borany	1994	7
19	Characteristic features of the generation current in α-irradiated p + -n junctions made from high-resistivity silicon Semiconductors ·E. Verbitskaya,Brenda Corrêa,Kesen Liu,N. B. Strokan	1993	3
20	Precision semiconductor spectrometry of ions Semiconductors ·E. Verbitskaya,Brenda Corrêa,A. M. Malyarenko,N. B. Strokan,Jonathan Mark Blanchard,B. Schmidt,J. von Borany,Derek Lovley,A. Tybulewicz	1993	2

About E. Verbitskaya

E. Verbitskaya is a scholar working on Nuclear and High Energy Physics, Radiation, Nuclear Energy and Engineering, Electrical and Electronic Engineering and Surfaces, Coatings and Films, having authored 89 papers that have together received 900 indexed citations. Recurring topics across this work include Particle Detector Development and Performance (68 papers), Silicon and Solar Cell Technologies (41 papers), Radiation Detection and Scintillator Technologies (30 papers), Advanced Semiconductor Detectors and Materials (16 papers), Radiation Effects in Electronics (11 papers), CCD and CMOS Imaging Sensors (10 papers), Semiconductor materials and interfaces (9 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). The work is most often cited by research in Nuclear and High Energy Physics (670 citations), Radiation (373 citations), Electrical and Electronic Engineering (736 citations), Surfaces, Coatings and Films (26 citations) and Atomic and Molecular Physics, and Optics (105 citations). E. Verbitskaya has collaborated with scholars based in Russia, United States and Switzerland. Frequent co-authors include V. Eremin, N. B. Strokan, Z Li, Z. Li, J. Härkönen, J. Härkönen, M. Bruzzi, P. Luukka, E. Tuovinen and I. Ilyashenko. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, IEEE Transactions on Nuclear Science, Journal of Instrumentation, Journal of Applied Physics and Physics-Uspekhi.

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