P. Pichler

2.2k total citations
136 papers, 1.6k citations indexed

About

P. Pichler is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, P. Pichler has authored 136 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 115 papers in Electrical and Electronic Engineering, 62 papers in Atomic and Molecular Physics, and Optics and 24 papers in Computational Mechanics. Recurrent topics in P. Pichler's work include Silicon and Solar Cell Technologies (74 papers), Semiconductor materials and interfaces (49 papers) and Semiconductor materials and devices (47 papers). P. Pichler is often cited by papers focused on Silicon and Solar Cell Technologies (74 papers), Semiconductor materials and interfaces (49 papers) and Semiconductor materials and devices (47 papers). P. Pichler collaborates with scholars based in Germany, France and Austria. P. Pichler's co-authors include H. Ryssel, R. Falster, Mohan V. Jacob, S. Selberherr, E. Guerrero, F. Cristiano, H. Pötzl, Anton J. Bauer, A. Claverie and G. Bauer and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

P. Pichler

126 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Pichler Germany 22 1.3k 658 390 242 181 136 1.6k
C. Donolato Italy 19 1.1k 0.9× 581 0.9× 353 0.9× 86 0.4× 159 0.9× 67 1.5k
R. Falster United States 31 3.3k 2.6× 1.5k 2.2× 1.2k 3.1× 153 0.6× 322 1.8× 192 3.6k
H. A. Davis United States 17 300 0.2× 241 0.4× 158 0.4× 249 1.0× 60 0.3× 69 888
C.B. Thomas United Kingdom 19 705 0.6× 253 0.4× 762 2.0× 34 0.1× 80 0.4× 87 1.1k
J. Slinkman United States 17 707 0.6× 617 0.9× 111 0.3× 44 0.2× 298 1.6× 42 1.0k
J. Beauvillain France 17 479 0.4× 355 0.5× 225 0.6× 245 1.0× 176 1.0× 58 1.1k
Ph. Niedermann Switzerland 17 498 0.4× 747 1.1× 306 0.8× 51 0.2× 320 1.8× 56 1.2k
Stéphane Larouche United States 19 456 0.4× 425 0.6× 141 0.4× 47 0.2× 573 3.2× 44 1.3k
Ken K. Chin United States 23 1.8k 1.4× 639 1.0× 672 1.7× 48 0.2× 435 2.4× 109 2.2k
J. Vancea Germany 20 708 0.6× 688 1.0× 392 1.0× 67 0.3× 218 1.2× 40 1.3k

Countries citing papers authored by P. Pichler

Since Specialization
Citations

This map shows the geographic impact of P. Pichler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Pichler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Pichler more than expected).

Fields of papers citing papers by P. Pichler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Pichler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Pichler. The network helps show where P. Pichler may publish in the future.

Co-authorship network of co-authors of P. Pichler

This figure shows the co-authorship network connecting the top 25 collaborators of P. Pichler. A scholar is included among the top collaborators of P. Pichler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Pichler. P. Pichler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pichler, P., et al.. (2025). Radial thermal transport from heated silicon nanowires: Molecular dynamics simulations and compact engineering models. Case Studies in Thermal Engineering. 69. 106056–106056.
2.
Michałowski, Paweł Piotr, et al.. (2024). Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 359. 41–46.
3.
Eggeler, Yolita M., et al.. (2020). Intrinsic nano-diffusion-couple for studying high temperature diffusion in multi-component superalloys. Scripta Materialia. 192. 120–124. 10 indexed citations
4.
Pichler, P., et al.. (2019). Channeling in 4H-SiC from an Application Point of View. Materials science forum. 963. 386–389. 5 indexed citations
5.
Beljakowa, Svetlana, et al.. (2019). Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon. physica status solidi (a). 216(17). 5 indexed citations
6.
Pichler, P.. (2015). Gettering and Defect Engineering in Semiconductor Technology XVI. Trans Tech Publications Ltd. eBooks. 3 indexed citations
7.
Mortet, V., Guillermo P. Ortiz, Tobias Erlbacher, et al.. (2014). Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs. Materials science forum. 778-780. 583–586. 3 indexed citations
8.
Cristiano, F., P. Pichler, C. Tavernier, & Wolfgang Windl. (2014). Advanced Extra Functionality CMOS‐based Devices. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(1). 7–8. 2 indexed citations
9.
Wolf, F. Alexander, et al.. (2013). A comprehensive model for the diffusion of boron in silicon in presence of fluorine. Solid-State Electronics. 87. 4–10. 2 indexed citations
10.
Fisicaro, Giuseppe, et al.. (2013). Anomalous Impurity Segregation and Local Bonding Fluctuation inl-Si. Physical Review Letters. 110(11). 117801–117801. 27 indexed citations
11.
Pichler, P., et al.. (2011). On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells. Solid-State Electronics. 65-66. 114–122. 1 indexed citations
12.
Koffel, S., P. Pichler, Anton J. Bauer, et al.. (2009). Honeycomb voids due to ion implantation in germanium. Thin Solid Films. 518(9). 2323–2325. 22 indexed citations
13.
Pichler, P., et al.. (2007). Characterization of the Segregation of Arsenic at the Interface SiO2/Si. MRS Proceedings. 994. 4 indexed citations
14.
Pichler, P., C.J. Ortiz, B. Colombeau, et al.. (2006). Diffusion and activation of dopants in silicon and advanced silicon-based materials. HAL (Le Centre pour la Communication Scientifique Directe). 3 indexed citations
15.
McCoy, S., et al.. (2006). Flash Annealing Technology for USJ: Modeling and Metrology. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 103–110. 2 indexed citations
16.
Frey, L., et al.. (1998). Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon. Radiation effects and defects in solids. 145(3). 213–223. 3 indexed citations
17.
Jacob, Mohan V., P. Pichler, H. Ryssel, et al.. (1997). Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 57-58. 349–354. 15 indexed citations
18.
Ryssel, H., et al.. (1995). Simulation of semiconductor devices and processes, vol. 6. Springer eBooks.
19.
Kuchar, F., R. Meisels, K. Y. Lim, et al.. (1987). Hall Conductivity at Microwave and Submillimeter Frequencies in the Quantum Hall Effect Regime. Physica Scripta. T19A. 79–86. 3 indexed citations
20.
Pichler, P., et al.. (1985). Simulation of critical IC-fabrication steps. IEEE Transactions on Electron Devices. 32(10). 1940–1953. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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