Fu-Ju Hou

477 total citations
40 papers, 263 citations indexed

About

Fu-Ju Hou is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Fu-Ju Hou has authored 40 papers receiving a total of 263 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 8 papers in Biomedical Engineering. Recurrent topics in Fu-Ju Hou's work include Semiconductor materials and devices (31 papers), Ferroelectric and Negative Capacitance Devices (19 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). Fu-Ju Hou is often cited by papers focused on Semiconductor materials and devices (31 papers), Ferroelectric and Negative Capacitance Devices (19 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). Fu-Ju Hou collaborates with scholars based in Taiwan, United States and Japan. Fu-Ju Hou's co-authors include Bau‐Tong Dai, Wha‐Tzong Whang, Yung‐Chun Wu, Yao‐Jen Lee, Guang-Li Luo, Horng‐Chih Lin, Chih-Chao Yang, Wen-Fa Wu, Jia‐Min Shieh and Chang‐Hong Shen and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Fu-Ju Hou

36 papers receiving 257 citations

Peers

Fu-Ju Hou
Chen‐Wei Peng China
Tewook Bang South Korea
Dinesh Kumar Sharma India
Tao Chu Japan
Ramon B. Salazar United States
Ian Cayrefourcq France
O. Schultz Germany
Pascal Faucherand France
Po-Jung Sung Taiwan
Chen‐Wei Peng China
Fu-Ju Hou
Citations per year, relative to Fu-Ju Hou Fu-Ju Hou (= 1×) peers Chen‐Wei Peng

Countries citing papers authored by Fu-Ju Hou

Since Specialization
Citations

This map shows the geographic impact of Fu-Ju Hou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fu-Ju Hou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fu-Ju Hou more than expected).

Fields of papers citing papers by Fu-Ju Hou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fu-Ju Hou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fu-Ju Hou. The network helps show where Fu-Ju Hou may publish in the future.

Co-authorship network of co-authors of Fu-Ju Hou

This figure shows the co-authorship network connecting the top 25 collaborators of Fu-Ju Hou. A scholar is included among the top collaborators of Fu-Ju Hou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fu-Ju Hou. Fu-Ju Hou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
3.
4.
Chen, Yuhong, et al.. (2025). Low-temperature microwave annealing stabilizes the morphotropic phase boundary in HfO2/ZrO2 superlattice heterostructures. Applied Physics Letters. 126(23). 1 indexed citations
5.
Huang, Kaiwei, et al.. (2024). 3-D Self-Aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate Simple Process. IEEE Electron Device Letters. 45(10). 2013–2016.
6.
Luo, Guang-Li, et al.. (2024). High-Temperature Retention Stability of Multibit Ferroelectric HfZrO₂ FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window. IEEE Transactions on Electron Devices. 71(10). 5975–5979. 1 indexed citations
7.
Yang, Chih-Chao, et al.. (2024). High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization. IEEE Electron Device Letters. 45(12). 2272–2275. 3 indexed citations
8.
Tseng, Ting-Yu, et al.. (2023). High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET. Nanomaterials. 13(8). 1310–1310. 8 indexed citations
9.
Chang, Hao‐Hsiang, et al.. (2023). Vertically Stacked Ge Diamond-shape Nanowires GAAFET with Ferroelectric HZO. 127–128. 1 indexed citations
10.
Tseng, Ting-Yu, et al.. (2023). SiGe/Si Superlattice Ferroelectric HfZrO2 ΩFET and CMOS Inverter With SSmin,n = 62.4 mV/dec, ION/IOFF > 1.0 × 107, and Voltage Gain = 111.4 V/V. IEEE Electron Device Letters. 45(2). 260–263. 2 indexed citations
11.
Tsai, Yu-Chen, et al.. (2021). Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance. ECS Journal of Solid State Science and Technology. 10(6). 65002–65002. 2 indexed citations
12.
Su, Chang, Hwan‐You Chang, Guang-Li Luo, et al.. (2021). Sub-60 mV/dec Germanium Nanowire Field-Effect Transistors with 2-nm-thick Ferroelectric Hf0.5Zr0.5O2. 1–2. 1 indexed citations
13.
Chang, Hao‐Hsiang, et al.. (2021). Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance. IEEE Electron Device Letters. 42(12). 1727–1730. 6 indexed citations
14.
Chang, Hao‐Hsiang, et al.. (2020). Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor. Applied Physics Letters. 117(26). 7 indexed citations
15.
Ruan, Dun‐Bao, et al.. (2019). Investigation of 5-nm-Thick Hf0.5Zr0.5O2 Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope. IEEE Journal of the Electron Devices Society. 7. 1033–1037. 9 indexed citations
16.
Chen, Yuning, Fu-Ju Hou, Chun-Jung Su, & Yung‐Chun Wu. (2019). Study of Germanium Nanosheet Channel With Negative Capacitance Field-Effect-Transistor. 1–2. 1 indexed citations
17.
Sung, Po-Jung, Fu-Ju Hou, Fu-Kuo Hsueh, et al.. (2017). High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications. IEEE Transactions on Electron Devices. 64(5). 2054–2060. 15 indexed citations
18.
Hou, Fu-Ju, Po-Jung Sung, Fu-Kuo Hsueh, et al.. (2016). Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs. IEEE Transactions on Electron Devices. 63(10). 3837–3843. 4 indexed citations
19.
Wu, Shich-Chuan, et al.. (2007). Fabrication of Three Dimensional Cu Metallic Photonic Crystal by Electroless Plating. Journal of Physics Conference Series. 61. 1261–1265. 1 indexed citations
20.
Lin, Horng‐Chih, Mengfan Wang, Fu-Ju Hou, et al.. (2003). Nano-scale implantless Schottky-barrier SOI FinFETs with excellent ambipolar performance. 45–46. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Chen‐Wei Peng Breakdown of academic impact, for papers by Tewook Bang Breakdown of academic impact, for papers by Dinesh Kumar Sharma Breakdown of academic impact, for papers by Tao Chu Breakdown of academic impact, for papers by Ramon B. Salazar Breakdown of academic impact, for papers by Ian Cayrefourcq Breakdown of academic impact, for papers by O. Schultz Breakdown of academic impact, for papers by Pascal Faucherand Breakdown of academic impact, for papers by Po-Jung Sung
Rankless by CCL
2026