Kai‐Jhih Gan

568 citations

31 papers · 448 indexed · h-index 14

Co-authors: Po‐Tsun Liu Dun‐Bao Ruan Simon M. Sze Wei‐Chiao Chang Po‐Yi Kuo Kuei‐Shu Chang‐Liao Hsiao‐Wen Zan Yue Kuo
Topics: Transition Metal Oxide Nanomaterials (19 papers)Thin-Film Transistor Technologies (18 papers)Advanced Memory and Neural Computing (14 papers)
Cited by: Polymers and Plastics Electrical and Electronic Engineering Materials Chemistry
Journals: Applied Physics Letters Scientific Reports ACS Applied Materials & Interfaces
Partner nations: Taiwan China United States

In The Last Decade

Kai‐Jhih Gan

29 papers receiving 435 citations

Peers

Countries citing papers authored by Kai‐Jhih Gan

Since Specialization

Citations

This map shows the geographic impact of Kai‐Jhih Gan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kai‐Jhih Gan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kai‐Jhih Gan more than expected).

Fields of papers citing papers by Kai‐Jhih Gan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kai‐Jhih Gan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kai‐Jhih Gan. The network helps show where Kai‐Jhih Gan may publish in the future.

Co-authorship network of co-authors of Kai‐Jhih Gan

This figure shows the co-authorship network connecting the top 25 collaborators of Kai‐Jhih Gan. A scholar is included among the top collaborators of Kai‐Jhih Gan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kai‐Jhih Gan. Kai‐Jhih Gan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Enhancing Stability and Performance of Conductive Bridge Random Access Memory: Use of a Copper-Doped ZnO Nanorod-Embedded Switching Layer 2025 ·ACS Applied Materials & Interfaces ·Po‐Tsun Liu,(unknown),(unknown),Kai‐Jhih Gan,Dun‐Bao Ruan,(unknown),Shu‐Wei Chang	2
2	Surface functionalization of indium tin oxide via (3-aminopropyl) triethoxysilane and glucose oxidase for enhanced sensitivity in glucose detection 2025 ·Vacuum ·Kai‐Jhih Gan,(unknown),(unknown),Tiaoyang Li,Shao Hao Wang,Kuei‐Shu Chang‐Liao,Dun‐Bao Ruan	0
3	Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer 2025 ·IEEE Electron Device Letters ·(unknown),Kai‐Jhih Gan,Sheau-Shi Pan,Shao Hao Wang,Tiaoyang Li,Dun‐Bao Ruan	2
4	Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment 2024 ·IEEE Electron Device Letters ·Dun‐Bao Ruan,Kuei‐Shu Chang‐Liao,Kai‐Chun Yang,Kai‐Jhih Gan	2
5	Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments 2024 ·IEEE Transactions on Electron Devices ·Dun‐Bao Ruan,Kuei‐Shu Chang‐Liao,(unknown),(unknown),(unknown),(unknown),Kai‐Jhih Gan	1
6	Simultaneously Improved Electrical Characteristics of Ge n/p-FinFETs and Inverter With Oxidized Alloy-Like Hafnium Nitride Interfacial Layer 2024 ·IEEE Electron Device Letters ·Dun‐Bao Ruan,Kuei‐Shu Chang‐Liao,Cheng-Han Li,(unknown),Kai‐Jhih Gan	0
7	Sputtered Ultrathin WO₃ for Realizing Room-Temperature High-Sensitive NO₂ Gas Sensors 2023 ·ACS Applied Electronic Materials ·(unknown),(unknown),Po‐Tsun Liu,Hsiao‐Wen Zan,(unknown),Yue Kuo,Dun‐Bao Ruan,Kai‐Jhih Gan,(unknown)	17
8	Radiation hardness of InWZnO thin film as resistive switching layer 2022 ·Applied Physics Letters ·(unknown),Dun‐Bao Ruan,Kuei‐Shu Chang‐Liao,Kai‐Jhih Gan,Simon M. Sze,Po‐Tsun Liu	6
9	Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory 2022 ·Vacuum ·(unknown),Po‐Tsun Liu,Kai‐Jhih Gan,Dun‐Bao Ruan,Simon M. Sze	5
10	Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film 2021 ·Nanomaterials ·(unknown),Po‐Tsun Liu,Kai‐Jhih Gan,Dun‐Bao Ruan,Simon M. Sze	4
11	Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory 2020 ·Nanotechnology ·Kai‐Jhih Gan,Po‐Tsun Liu,Dun‐Bao Ruan,Chih-Chieh Hsu,(unknown),Simon M. Sze	7
12	Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology 2020 ·Applied Physics Letters ·Dun‐Bao Ruan,Po‐Tsun Liu,Kai‐Jhih Gan,(unknown),(unknown),Simon M. Sze	40
13	High Performance Transparent a-IGZO Thin Film Transistors With ALD-HfO₂ Gate Insulator on Colorless Polyimide Substrate 2020 ·IEEE Transactions on Nanotechnology ·(unknown),Dun‐Bao Ruan,Po‐Tsun Liu,(unknown),(unknown),Kai‐Jhih Gan,Simon M. Sze	24
14	Highly durable and flexible gallium-based oxide conductive-bridging random access memory 2019 ·Scientific Reports ·Kai‐Jhih Gan,Po‐Tsun Liu,(unknown),Dun‐Bao Ruan,Simon M. Sze	45
15	Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors 2019 ·Advanced Electronic Materials ·Dun‐Bao Ruan,Po‐Tsun Liu,(unknown),(unknown),(unknown),(unknown),Kai‐Jhih Gan,Simon M. Sze	33
16	Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems 2019 ·ACS Applied Materials & Interfaces ·Dun‐Bao Ruan,Po‐Tsun Liu,(unknown),(unknown),(unknown),Kai‐Jhih Gan,Simon M. Sze	35
17	TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology 2018 ·Surface and Coatings Technology ·Kai‐Jhih Gan,Po‐Tsun Liu,(unknown),Dun‐Bao Ruan,(unknown),Simon M. Sze	32
18	Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer 2018 ·RSC Advances ·Dun‐Bao Ruan,Po‐Tsun Liu,(unknown),Po‐Yi Kuo,(unknown),Kai‐Jhih Gan,(unknown),Simon M. Sze	30
19	The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure 2018 ·Thin Solid Films ·Dun‐Bao Ruan,Po‐Tsun Liu,Kai‐Jhih Gan,(unknown),(unknown),(unknown),(unknown),Po‐Yi Kuo,Simon M. Sze	12
20	High mobility tungsten-doped thin-film transistor on polyimide substrate with low temperature process 2018 ·Dun‐Bao Ruan,Po‐Tsun Liu,(unknown),(unknown),Kai‐Jhih Gan,(unknown),Po‐Yi Kuo,Simon M. Sze	2

About Kai‐Jhih Gan

Kai‐Jhih Gan is a scholar working on Polymers and Plastics, Electrical and Electronic Engineering and Materials Chemistry, having authored 31 papers that have together received 448 indexed citations. Recurring topics across this work include Transition Metal Oxide Nanomaterials (19 papers), Thin-Film Transistor Technologies (18 papers) and Advanced Memory and Neural Computing (14 papers). The work is most often cited by research in Polymers and Plastics (217 citations), Electrical and Electronic Engineering (413 citations) and Materials Chemistry (147 citations). Kai‐Jhih Gan has collaborated with scholars based in Taiwan, China and United States. Frequent co-authors include Po‐Tsun Liu, Dun‐Bao Ruan, Simon M. Sze, Simon M. Sze, Wei‐Chiao Chang, Po‐Yi Kuo, Kuei‐Shu Chang‐Liao, Hsiao‐Wen Zan, Yue Kuo and Yu‐Chuan Chiu. Their work appears in journals such as Applied Physics Letters, Scientific Reports and ACS Applied Materials & Interfaces.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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