R. Solomon

530 total citations
22 papers, 386 citations indexed

About

R. Solomon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, R. Solomon has authored 22 papers receiving a total of 386 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in R. Solomon's work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). R. Solomon is often cited by papers focused on Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). R. Solomon collaborates with scholars based in United States. R. Solomon's co-authors include A. Sher, T.Y. Chan, Chenming Hu, D.C. DeFevere, P.K. Ko, P.K. Ko, Robert Fairman, W.H. Haydl, J. Chen and R.C. Newman and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

R. Solomon

20 papers receiving 356 citations

Peers

R. Solomon

EEE

MC

AMPO

IC

CMP

George O. Ramseyer United States

C. D. Marshall United States

Sidney G. Parker United States

Ross E. Shrader United States

V. Dallacasa Italy

C. Paracchini Italy

Simon Larach United States

I. Taniguchi Japan

M. Robinson United States

Mushti V. Ramakrishna United States

George O. Ramseyer United States

R. Solomon

106 ×0.4

EEE

167 ×1.4

MC

82 ×0.9

AMPO

18 ×0.2

IC

14 ×0.5

CMP

Citations per year, relative to R. Solomon R. Solomon (= 1×) peers George O. Ramseyer

Countries citing papers authored by R. Solomon

Since Specialization

Citations

This map shows the geographic impact of R. Solomon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Solomon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Solomon more than expected).

Fields of papers citing papers by R. Solomon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Solomon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Solomon. The network helps show where R. Solomon may publish in the future.

Co-authorship network of co-authors of R. Solomon

This figure shows the co-authorship network connecting the top 25 collaborators of R. Solomon. A scholar is included among the top collaborators of R. Solomon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Solomon. R. Solomon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Solomon, R.. (2007). FABRICATION AND CHARACTERIZATION OF Cu/4H-SiC SCHOTTKY DIODES. TigerPrints (Clemson University).

2.

Solomon, R., et al.. (2002). Time dependence of fully-depleted SOI MOSFETs subthreshold current. 32–33. 1 indexed citations

3.

Quader, K.N., et al.. (2002). Hot electron gate current and degradation in P-channel SOI MOSFETs. 34. 8–9. 2 indexed citations

4.

Chen, Jian, et al.. (2002). Effects of the field-edge transistor on SOI MOSFETs. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 219–223. 2 indexed citations

5.

Fang, Peng, et al.. (2002). Noise overshoot at drain current kink in SOI MOSFET. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 40–41. 8 indexed citations

6.

Chen, J., F. Assaderaghi, H.-J. Wann, et al.. (2002). An accurate model of thin film SOI-MOSFET breakdown voltage. 671–674. 9 indexed citations

7.

Solomon, R., et al.. (1992). Threshold voltage and C-V characteristics of SOI MOSFET's related to Si film thickness variation on SIMOX wafers. IEEE Transactions on Electron Devices. 39(10). 2346–2353. 41 indexed citations

8.

Quader, K.N., et al.. (1991). HOT ELECTRON GATE CURRENT &VD DEGRADATION P-CHANNEL SOI MOSFET'S. 2 indexed citations

9.

Solomon, R., et al.. (1991). A CV technique for measuring thin SOI film thickness. IEEE Electron Device Letters. 12(8). 453–455. 54 indexed citations

10.

Assaderaghi, F., et al.. (1991). Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs. IEEE Electron Device Letters. 12(10). 518–520. 14 indexed citations

11.

Wu, Chao‐Hsin, et al.. (1978). Optimization studies of CVD growth of GaAs0.6P0.4. Journal of Electronic Materials. 7(6). 791–821. 6 indexed citations

12.

Barrera, Júnior, et al.. (1976). High-Q GaAs tuning varactors. 120–121. 3 indexed citations

13.

Barrera, Júnior, et al.. (1976). Minimum Resistance Microwave Diodes. 14–18.

14.

Fairman, Robert & R. Solomon. (1973). Submicron Epitaxial Films for GaAs Field Effect Transistors. Journal of The Electrochemical Society. 120(4). 541–541. 12 indexed citations

15.

Solomon, R. & D.C. DeFevere. (1972). Efficiency shift in very high efficiency GaP (Zn–O) diodes. Applied Physics Letters. 21(6). 257–260. 18 indexed citations

16.

Haydl, W.H. & R. Solomon. (1968). The effect of illumination on Gunn oscillations in epitaxial GaAs. IEEE Transactions on Electron Devices. 15(11). 941–942. 7 indexed citations

17.

Solomon, R., et al.. (1966). Polarization in LaF3. Journal of Applied Physics. 37(9). 3427–3432. 30 indexed citations

18.

Sher, A., et al.. (1966). Transport Properties of LaF3. Physical Review. 144(2). 593–604. 111 indexed citations

19.

Solomon, R., et al.. (1963). STIMULATED EMISSION AT 5985 Å FROM Pr+3 IN LaF3. Applied Physics Letters. 3(8). 135–137. 44 indexed citations

20.

Solomon, R., et al.. (1961). Germanium-Doped Gallium Arsenide Tunnel Diodes. Journal of The Electrochemical Society. 108(7). 716–716. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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