Hao Zhu

7.5k total citations · 5 hit papers
243 papers, 5.8k citations indexed

About

Hao Zhu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Hao Zhu has authored 243 papers receiving a total of 5.8k indexed citations (citations by other indexed papers that have themselves been cited), including 200 papers in Electrical and Electronic Engineering, 98 papers in Materials Chemistry and 30 papers in Cellular and Molecular Neuroscience. Recurrent topics in Hao Zhu's work include Advanced Memory and Neural Computing (88 papers), Semiconductor materials and devices (72 papers) and Ferroelectric and Negative Capacitance Devices (69 papers). Hao Zhu is often cited by papers focused on Advanced Memory and Neural Computing (88 papers), Semiconductor materials and devices (72 papers) and Ferroelectric and Negative Capacitance Devices (69 papers). Hao Zhu collaborates with scholars based in China, United States and Australia. Hao Zhu's co-authors include Lin Chen, Qingqing Sun, David Wei Zhang, Tianyu Wang, Shi‐Jin Ding, Peng Zhou, John Q. Xiao, Jie Han, Yan Jin and Jialin Meng and has published in prestigious journals such as Nature Communications, SHILAP Revista de lepidopterología and Nano Letters.

In The Last Decade

Hao Zhu

221 papers receiving 5.7k citations

Hit Papers

Uptake, translocation, and accumulation of manufactured i... 2008 2026 2014 2020 2008 2021 2022 2024 2025 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hao Zhu China 41 4.2k 2.4k 1.1k 803 661 243 5.8k
Tukaram D. Dongale India 39 3.8k 0.9× 1.9k 0.8× 1.0k 1.0× 733 0.9× 1.4k 2.1× 273 5.5k
Tania Roy United States 38 2.9k 0.7× 2.7k 1.1× 377 0.4× 1.2k 1.5× 355 0.5× 75 5.0k
Jia Huang China 62 8.2k 2.0× 2.9k 1.2× 2.0k 1.8× 2.7k 3.4× 3.3k 5.0× 223 11.4k
Chang Liu China 46 5.3k 1.3× 3.3k 1.4× 337 0.3× 1.1k 1.3× 1.3k 1.9× 221 8.0k
Dandan Hao China 32 1.7k 0.4× 913 0.4× 522 0.5× 390 0.5× 526 0.8× 77 3.1k
You Meng China 40 2.8k 0.7× 2.2k 0.9× 147 0.1× 889 1.1× 530 0.8× 158 4.1k
Yongli He China 34 2.6k 0.6× 795 0.3× 1.1k 1.0× 837 1.0× 479 0.7× 67 4.2k
Qiang Zhao China 36 2.4k 0.6× 1.4k 0.6× 323 0.3× 947 1.2× 1.3k 2.0× 127 4.3k
Jiaqiang Li China 33 1.7k 0.4× 1.6k 0.6× 246 0.2× 457 0.6× 247 0.4× 78 3.5k

Countries citing papers authored by Hao Zhu

Since Specialization
Citations

This map shows the geographic impact of Hao Zhu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hao Zhu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hao Zhu more than expected).

Fields of papers citing papers by Hao Zhu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hao Zhu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hao Zhu. The network helps show where Hao Zhu may publish in the future.

Co-authorship network of co-authors of Hao Zhu

This figure shows the co-authorship network connecting the top 25 collaborators of Hao Zhu. A scholar is included among the top collaborators of Hao Zhu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hao Zhu. Hao Zhu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Li, Zhenhai, Tianyu Wang, Yongkai Liu, et al.. (2024). Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals. Advanced Science. 12(4). e2410765–e2410765. 1 indexed citations
3.
Guo, Hongxuan, Jiahao Yao, Siyuan Chen, et al.. (2024). Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al2O3 Layer Formation: A Study on Preparation Techniques and Performance Impact. Micromachines. 15(12). 1499–1499. 1 indexed citations
4.
Wang, Tianyu, Yongkai Liu, Jiajie Yu, et al.. (2024). La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application. IEEE Transactions on Electron Devices. 71(9). 5375–5379. 2 indexed citations
5.
Cao, Yuanyuan, Yilun Liu, Qingxuan Li, et al.. (2023). Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses. Advanced Electronic Materials. 9(5). 17 indexed citations
6.
Hao, Guolin, Jinbiao Xiao, Hao Zhu, et al.. (2023). Van der waals epitaxial growth of mixed-dimensional 1D/2D heterostructures with tellurium nanowires and transition metal dichalcogenide nanosheets for nonlinear optical applications. Materials Today Physics. 34. 101069–101069. 21 indexed citations
7.
Li, Zhenhai, Tianyu Wang, Jialin Meng, et al.. (2023). Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing. Materials Horizons. 10(9). 3643–3650. 19 indexed citations
8.
Li, Qingxuan, Jialin Meng, Tianyu Wang, et al.. (2023). Photonic Synapses for Image Recognition and High Density Integration of Simplified Artificial Neural Networks. Advanced Electronic Materials. 9(6). 18 indexed citations
9.
Xu, Hang, Jingjing Tan, Lin Chen, et al.. (2023). Impact Analysis of Off-State Avalanche-Breakdown Stress on 650 V-Class Superjunction MOSFET. IEEE Transactions on Electron Devices. 70(7). 3743–3747. 1 indexed citations
11.
Xin, Chao, Chengkang Tang, Chen Wang, et al.. (2022). Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress. IEEE Transactions on Electron Devices. 69(12). 6587–6593. 14 indexed citations
12.
Meng, Jialin, Zhenhai Li, Qingxuan Li, et al.. (2022). Li-Ion Doped Artificial Synaptic Memristor for Highly Linear Neuromorphic Computing. IEEE Electron Device Letters. 43(12). 2069–2072. 17 indexed citations
13.
Meng, Jialin, Tianyu Wang, Zhenyu He, et al.. (2021). Flexible boron nitride-based memristor forin situdigital and analogue neuromorphic computing applications. Materials Horizons. 8(2). 538–546. 110 indexed citations
14.
Wang, Yang, Xingli Zou, Sheng Han, et al.. (2021). Growth Mechanisms and Morphology Engineering of Atomic Layer-Deposited WS2. ACS Applied Materials & Interfaces. 13(36). 43115–43122. 18 indexed citations
15.
Wang, Yin, Hongwei Tang, Yufeng Xie, et al.. (2021). An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations. Nature Communications. 12(1). 3347–3347. 79 indexed citations
16.
Wang, Tianyu, Jialin Meng, Zhenyu He, et al.. (2020). Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning. Nanoscale. 12(16). 9116–9123. 40 indexed citations
17.
Zhang, Simeng, Hu Xu, Fuyou Liao, et al.. (2019). Wafer-scale transferred multilayer MoS 2 for high performance field effect transistors. Nanotechnology. 30(17). 174002–174002. 42 indexed citations
18.
Liao, Fuyou, Jianan Deng, Xinyu Chen, et al.. (2019). A Dual‐Gate MoS2 Photodetector Based on Interface Coupling Effect. Small. 16(1). e1904369–e1904369. 72 indexed citations
19.
Wang, Tianyu, Jialin Meng, Zhenyu He, et al.. (2019). Fully transparent, flexible and waterproof synapses with pattern recognition in organic environments. Nanoscale Horizons. 4(6). 1293–1301. 50 indexed citations
20.
Wang, Tianyu, Lin Chen, Hao Zhu, et al.. (2018). Stateful Logic Operations Implemented With Graphite Resistive Switching Memory. IEEE Electron Device Letters. 39(4). 607–609. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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