Dashen Shen

543 total citations
37 papers, 373 citations indexed

About

Dashen Shen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Dashen Shen has authored 37 papers receiving a total of 373 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Dashen Shen's work include Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Dashen Shen is often cited by papers focused on Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Dashen Shen collaborates with scholars based in United States, China and Germany. Dashen Shen's co-authors include Yuehui Yu, Xinhong Cheng, Duo Cao, Li Zheng, Zhongjian Wang, Chao Xia, Lingyan Shen, Xinhong Cheng, Dawei Xu and Wenwei Yang and has published in prestigious journals such as Applied Physics Letters, The Journal of Physical Chemistry C and Applied Surface Science.

In The Last Decade

Dashen Shen

36 papers receiving 367 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Dashen Shen United States 11 300 167 46 45 44 37 373
Tsunehiro Ino Japan 11 447 1.5× 152 0.9× 22 0.5× 44 1.0× 80 1.8× 27 487
Gérard Guillot France 10 274 0.9× 139 0.8× 29 0.6× 79 1.8× 136 3.1× 50 370
Katsuhiro Kutsuki Japan 12 378 1.3× 138 0.8× 49 1.1× 63 1.4× 78 1.8× 36 410
G. Landis United States 11 312 1.0× 135 0.8× 34 0.7× 72 1.6× 120 2.7× 18 365
Donghyi Koh United States 8 200 0.7× 105 0.6× 12 0.3× 32 0.7× 39 0.9× 17 250
C.H. Ling Singapore 14 585 1.9× 124 0.7× 23 0.5× 32 0.7× 95 2.2× 77 614
Justin C. Hackley United States 9 322 1.1× 258 1.5× 28 0.6× 33 0.7× 68 1.5× 11 395
Igor Krylov Israel 12 390 1.3× 172 1.0× 50 1.1× 42 0.9× 96 2.2× 39 429
Nazareno Donato United Kingdom 8 233 0.8× 238 1.4× 31 0.7× 44 1.0× 29 0.7× 15 333
Shiyang Ji Japan 13 398 1.3× 91 0.5× 49 1.1× 122 2.7× 161 3.7× 58 470

Countries citing papers authored by Dashen Shen

Since Specialization
Citations

This map shows the geographic impact of Dashen Shen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dashen Shen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dashen Shen more than expected).

Fields of papers citing papers by Dashen Shen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dashen Shen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dashen Shen. The network helps show where Dashen Shen may publish in the future.

Co-authorship network of co-authors of Dashen Shen

This figure shows the co-authorship network connecting the top 25 collaborators of Dashen Shen. A scholar is included among the top collaborators of Dashen Shen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dashen Shen. Dashen Shen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Jingjie, Xinhong Cheng, Qian Wang, et al.. (2017). Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al 2 O 3 bilayer mask. Materials Science in Semiconductor Processing. 67. 104–109. 9 indexed citations
2.
Cao, Duo, Xinhong Cheng, Yahong Xie, et al.. (2015). Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures. RSC Advances. 5(47). 37881–37886. 40 indexed citations
3.
Cao, Duo, Xinhong Cheng, Tingting Jia, et al.. (2013). Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition. IEEE Transactions on Nuclear Science. 60(2). 1373–1378. 6 indexed citations
4.
Xia, Chao, Xinhong Cheng, Duo Cao, et al.. (2013). on-Resistance Degradation Induced by Hot-Carrier Injection in SOI SJ-LDMOS. IEEE Transactions on Electron Devices. 60(3). 1279–1281. 9 indexed citations
5.
Xia, Chao, Xinhong Cheng, Zhongjian Wang, et al.. (2013). A novel partial-SOI LDMOSFET (>800V) with n-type floating buried layer in substrate. Microelectronics Reliability. 54(3). 582–586. 2 indexed citations
6.
Cao, Duo, Xinhong Cheng, Yuehui Yu, et al.. (2013). Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films. Applied Physics Letters. 103(8). 7 indexed citations
7.
Cheng, Xinhong, Chao Xia, Dawei Xu, et al.. (2012). A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate. Journal of Semiconductors. 33(5). 54003–54003. 4 indexed citations
8.
Wan, Li, et al.. (2011). Effects of Al2O3 on Thermal Stability and Electrical Reliability of HfO2 Film on Strained SiGe. Rare Metal Materials and Engineering. 40(8). 1344–1347. 1 indexed citations
9.
Xu, Dawei, Xinhong Cheng, Youwei Zhang, et al.. (2011). Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment. Microelectronic Engineering. 93. 15–18. 8 indexed citations
10.
Cheng, Xinhong, et al.. (2009). The properties of high-k gate dielectric films deposited on HRSOI. Microelectronic Engineering. 86(12). 2404–2407. 2 indexed citations
11.
Cheng, Xinhong, et al.. (2009). Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3. Rare Metal Materials and Engineering. 38(2). 189–192. 11 indexed citations
12.
Cheng, Xinhong, et al.. (2009). Characterization of gadolinium oxide film by pulse laser deposition. Applied Surface Science. 256(3). 921–923. 22 indexed citations
13.
Cheng, Xinhong, et al.. (2008). Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics. Thin Solid Films. 517(1). 465–467. 2 indexed citations
14.
Cheng, Xinhong, En Xia Zhang, Yuehui Yu, et al.. (2007). Influence of nitrogen element on total-dose radiation response of high-k Hf-based dielectric films. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 257(1-2). 501–504. 4 indexed citations
15.
Cheng, Xinhong, et al.. (2007). Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer. Applied Physics Letters. 90(15). 8 indexed citations
16.
Cheng, Xinhong, et al.. (2005). Patterned silicon-on-insulator technology for RF Power LDMOSFET. Microelectronic Engineering. 81(1). 150–155. 25 indexed citations
17.
Hung, Shang-Chao, et al.. (2005). InGaN/GaN MQD p–n junction photodiodes. Physica E Low-dimensional Systems and Nanostructures. 30(1-2). 13–16. 5 indexed citations
18.
Li, Wen J., Zhaoning Song, Yang Yu, Song Zou, & Dashen Shen. (2003). Determination of sp3/sp2 ratio in amorphous-carbon thin film synthesized by reactive filtered arc deposition. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 206. 339–342. 4 indexed citations
19.
Lindquist, Robert G., B. Earl Wells, Mustafa A. G. Abushagur, et al.. (1997). <title>Optoelectronic design of the simultaneous optical multiprocessor exchange bus (SOME-Bus)</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3005. 303–312. 2 indexed citations
20.
Shen, Dashen & Pawan Bhat. (1989). New results on low level phosphorous doping in a-Si:H. Journal of Non-Crystalline Solids. 114. 265–267. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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