Justin C. Hackley

478 total citations
11 papers, 395 citations indexed

About

Justin C. Hackley is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Justin C. Hackley has authored 11 papers receiving a total of 395 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 2 papers in Condensed Matter Physics. Recurrent topics in Justin C. Hackley's work include Semiconductor materials and devices (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Electronic and Structural Properties of Oxides (5 papers). Justin C. Hackley is often cited by papers focused on Semiconductor materials and devices (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Electronic and Structural Properties of Oxides (5 papers). Justin C. Hackley collaborates with scholars based in United States. Justin C. Hackley's co-authors include Theodosia Gougousi, J. D. Demaree, Christopher J. K. Richardson, Dilshad Ali, Bruce W. Arey, I. Arslan, B. S. Palmer, D. S. Katzer, Ilke Arslan and J.A. Roussos and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Justin C. Hackley

11 papers receiving 388 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Justin C. Hackley United States	9	322	258	68	35	33	11	395
A. Chou United States	11	657 2.0×	114 0.4×	80 1.2×	71 2.0×	24 0.7×	24	684
Gérard Guillot France	10	274 0.9×	139 0.5×	136 2.0×	39 1.1×	79 2.4×	50	370
Rodrick Kuate Defo United States	8	180 0.6×	312 1.2×	124 1.8×	36 1.0×	42 1.3×	14	402
C. D’Emic United States	11	605 1.9×	197 0.8×	115 1.7×	49 1.4×	39 1.2×	15	630
Aliekber Aktağ Türkiye	12	255 0.8×	154 0.6×	170 2.5×	27 0.8×	34 1.0×	22	344
T. Wetteroth United States	7	218 0.7×	89 0.3×	71 1.0×	69 2.0×	52 1.6×	20	308
Jemima Gonsalves United States	7	294 0.9×	229 0.9×	152 2.2×	21 0.6×	37 1.1×	15	355
Gunther Jegert Germany	12	372 1.2×	164 0.6×	49 0.7×	54 1.5×	64 1.9×	16	409
G. Weidner Germany	10	281 0.9×	171 0.7×	72 1.1×	31 0.9×	37 1.1×	37	315
Stanislav Tyaginov Austria	22	1.2k 3.7×	143 0.6×	123 1.8×	41 1.2×	44 1.3×	125	1.3k

Countries citing papers authored by Justin C. Hackley

Since Specialization

Citations

This map shows the geographic impact of Justin C. Hackley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Justin C. Hackley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Justin C. Hackley more than expected).

Fields of papers citing papers by Justin C. Hackley

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Justin C. Hackley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Justin C. Hackley. The network helps show where Justin C. Hackley may publish in the future.

Co-authorship network of co-authors of Justin C. Hackley

This figure shows the co-authorship network connecting the top 25 collaborators of Justin C. Hackley. A scholar is included among the top collaborators of Justin C. Hackley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Justin C. Hackley. Justin C. Hackley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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11 of 11 papers shown

Liu, Xiang-Yang, Ilke Arslan, Bruce W. Arey, et al.. (2018). Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays. ACS Nano. 12(7). 6843–6850. 18 indexed citations

Richardson, Christopher J. K., et al.. (2016). Fabrication artifacts and parallel loss channels in metamorphic epitaxial aluminum superconducting resonators. Superconductor Science and Technology. 29(6). 64003–64003. 30 indexed citations

Hackley, Justin C., Wendy L. Sarney, & Christopher J. K. Richardson. (2013). Antimony-assisted carbonization of Si(111) with solid source molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 31(6). 2 indexed citations

Gougousi, Theodosia, et al.. (2010). Growth and Interface Evolution of HfO[sub 2] Films on GaAs(100) Surfaces. Journal of The Electrochemical Society. 157(5). H551–H551. 21 indexed citations

Hackley, Justin C. & Theodosia Gougousi. (2009). Properties of atomic layer deposited HfO2 thin films. Thin Solid Films. 517(24). 6576–6583. 90 indexed citations

Deen, David A., S.C. Binari, David F. Storm, et al.. (2009). AlN/GaN insulated gate HEMTs with HfO ₂ gate dielectric. Electronics Letters. 45(8). 423–424. 18 indexed citations

Hackley, Justin C., et al.. (2009). Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy. Applied Physics Letters. 95(13). 84 indexed citations

Hackley, Justin C., J. D. Demaree, & Theodosia Gougousi. (2008). Atomic Layer Deposition of HfO₂ Thin Films on Si and GaAs Substrates. MRS Proceedings. 1073. 5 indexed citations

Hackley, Justin C., J. D. Demaree, & Theodosia Gougousi. (2008). Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces. Applied Physics Letters. 92(16). 42 indexed citations

10.

Hackley, Justin C., J. D. Demaree, & Theodosia Gougousi. (2008). Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 26(5). 1235–1240. 32 indexed citations

11.

Hackley, Justin C., Theodosia Gougousi, & J. D. Demaree. (2007). Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si. Journal of Applied Physics. 102(3). 53 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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