Dai Okamoto

1.2k total citations
43 papers, 981 citations indexed

About

Dai Okamoto is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Dai Okamoto has authored 43 papers receiving a total of 981 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Dai Okamoto's work include Silicon Carbide Semiconductor Technologies (36 papers), Semiconductor materials and devices (33 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). Dai Okamoto is often cited by papers focused on Silicon Carbide Semiconductor Technologies (36 papers), Semiconductor materials and devices (33 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). Dai Okamoto collaborates with scholars based in Japan and United States. Dai Okamoto's co-authors include Hiroshi Yano, Takashi Fuyuki, Tomoaki Hatayama, Mitsuru Sometani, Shinsuke Harada, Kenji Hirata, Yoshiyuki Yonezawa, Tetsuo Hatakeyama, Hajime Okumura and Ryoji Kosugi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Carbon.

In The Last Decade

Dai Okamoto

41 papers receiving 954 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Dai Okamoto Japan 15 955 166 166 89 60 43 981
Katsunori Danno Japan 17 1.1k 1.1× 333 2.0× 182 1.1× 113 1.3× 79 1.3× 54 1.1k
Lori A. Lipkin United States 14 809 0.8× 131 0.8× 178 1.1× 79 0.9× 50 0.8× 24 832
Masahiro Nagano Japan 14 670 0.7× 203 1.2× 132 0.8× 97 1.1× 43 0.7× 46 724
H. Mitlehner Germany 14 882 0.9× 141 0.8× 69 0.4× 83 0.9× 29 0.5× 43 923
Calvin H. Carter China 16 621 0.7× 148 0.9× 114 0.7× 96 1.1× 73 1.2× 23 671
Danilo Crippa Italy 12 418 0.4× 55 0.3× 151 0.9× 71 0.8× 36 0.6× 40 459
C.H. Carter United States 8 588 0.6× 157 0.9× 83 0.5× 106 1.2× 42 0.7× 14 644
Anatoly M. Strel’chuk Russia 14 672 0.7× 244 1.5× 54 0.3× 103 1.2× 42 0.7× 95 712
Christian Brylinski France 13 418 0.4× 109 0.7× 97 0.6× 136 1.5× 44 0.7× 51 489
N.S. Savkina Russia 13 502 0.5× 175 1.1× 50 0.3× 92 1.0× 57 0.9× 76 538

Countries citing papers authored by Dai Okamoto

Since Specialization
Citations

This map shows the geographic impact of Dai Okamoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dai Okamoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dai Okamoto more than expected).

Fields of papers citing papers by Dai Okamoto

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dai Okamoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dai Okamoto. The network helps show where Dai Okamoto may publish in the future.

Co-authorship network of co-authors of Dai Okamoto

This figure shows the co-authorship network connecting the top 25 collaborators of Dai Okamoto. A scholar is included among the top collaborators of Dai Okamoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dai Okamoto. Dai Okamoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sometani, Mitsuru, et al.. (2023). Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface. APL Materials. 11(11). 4 indexed citations
2.
3.
Hatakeyama, Tetsuo, et al.. (2022). Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs. Journal of Applied Physics. 131(14). 8 indexed citations
4.
Sakoda, Tatsuya, et al.. (2022). Development of Detection Technique of Residual-charges by Inductive Current Pulse. IEEJ Transactions on Fundamentals and Materials. 142(7). 345–346.
5.
Sakata, Hiroki, Dai Okamoto, Mitsuru Sometani, et al.. (2021). Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method. Japanese Journal of Applied Physics. 60(6). 60901–60901. 5 indexed citations
6.
Okamoto, Dai, Xufang Zhang, Mitsuru Sometani, et al.. (2020). Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs. Japanese Journal of Applied Physics. 59(4). 44003–44003. 6 indexed citations
7.
Hatakeyama, Tetsuo, Mitsuru Sometani, Shinsuke Harada, et al.. (2019). Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities. Applied Physics Express. 12(2). 21003–21003. 25 indexed citations
8.
Okamoto, Dai. (2019). Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method. 2 indexed citations
9.
Zhang, Xufang, Dai Okamoto, Mitsuru Sometani, et al.. (2018). Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors. Japanese Journal of Applied Physics. 57(6S3). 06KA06–06KA06. 7 indexed citations
10.
Okamoto, Dai, et al.. (2017). SiO2/4H‐SiC構造における低速界面トラップに及ぼすホウ素取込の効果. Applied Physics A. 123(2). 6. 1 indexed citations
11.
Sometani, Mitsuru, Mitsuo Okamoto, Tetsuo Hatakeyama, et al.. (2017). Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices Under Various Gate Bias Stress Conditions. 2 indexed citations
12.
An, Junjie, et al.. (2017). Investigation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test. IEEJ Transactions on Electronics Information and Systems. 137(2). 216–221. 2 indexed citations
13.
14.
Sometani, Mitsuru, Dai Okamoto, Shinsuke Harada, et al.. (2016). Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method. Japanese Journal of Applied Physics. 55(4S). 04ER11–04ER11. 27 indexed citations
15.
Sometani, Mitsuru, Dai Okamoto, Shinsuke Harada, et al.. (2015). Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC. Journal of Applied Physics. 117(2). 50 indexed citations
16.
Yano, Hiroshi, et al.. (2012). Effect of POCl<sub>3</sub> Annealing on Reliability of Thermal Oxides Grown on 4H-SiC. Materials science forum. 717-720. 739–742. 17 indexed citations
17.
Yano, Hiroshi, et al.. (2011). Improved MOS Interface Properties of C-Face 4H-SiC by POCl<sub>3</sub> Annealing. Materials science forum. 679-680. 425–428. 3 indexed citations
18.
Okamoto, Dai, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, & Takashi Fuyuki. (2010). Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide. IEEE Electron Device Letters. 31(7). 710–712. 255 indexed citations
19.
Okamoto, Dai, et al.. (2009). C面4H-SiC MOS構造中のNO直接酸化で生成された界面近傍捕獲中心の研究. Applied Physics Express. 2(2). 1–21201. 3 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Katsunori Danno Breakdown of academic impact, for papers by Lori A. Lipkin Breakdown of academic impact, for papers by Masahiro Nagano Breakdown of academic impact, for papers by H. Mitlehner Breakdown of academic impact, for papers by Calvin H. Carter Breakdown of academic impact, for papers by Danilo Crippa Breakdown of academic impact, for papers by C.H. Carter Breakdown of academic impact, for papers by Anatoly M. Strel’chuk Breakdown of academic impact, for papers by Christian Brylinski Breakdown of academic impact, for papers by N.S. Savkina
Rankless by CCL
2026