H. Fitouri

541 total citations
31 papers, 436 citations indexed

About

H. Fitouri is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, H. Fitouri has authored 31 papers receiving a total of 436 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Atomic and Molecular Physics, and Optics, 25 papers in Electrical and Electronic Engineering and 9 papers in Materials Chemistry. Recurrent topics in H. Fitouri's work include Semiconductor Quantum Structures and Devices (23 papers), Semiconductor materials and devices (12 papers) and Advanced Semiconductor Detectors and Materials (10 papers). H. Fitouri is often cited by papers focused on Semiconductor Quantum Structures and Devices (23 papers), Semiconductor materials and devices (12 papers) and Advanced Semiconductor Detectors and Materials (10 papers). H. Fitouri collaborates with scholars based in Tunisia, Saudi Arabia and France. H. Fitouri's co-authors include B. El Jani, A. Rebey, A. Fouzri, I. Halidou, T. Boufaden, A. Bchetnia, N. Ben Sédrine, R. Chtourou, N. Yacoubi and N. Sghaier and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Journal of Alloys and Compounds.

In The Last Decade

H. Fitouri

31 papers receiving 422 citations

Peers

H. Fitouri

AMPO

EEE

CMP

А. В. Соломонов Russia

M. Ozeki Japan

Yasuhiro Shiraki Japan

V. P. Evtikhiev Russia

M. Mannoh Japan

P. Roentgen Switzerland

Yurii Maidaniuk United States

I. P. Soshnikov Russia

V. Kolkovsky Poland

R. W. Streater Canada

А. В. Соломонов Russia

H. Fitouri

389 ×1.1

AMPO

361 ×1.3

EEE

174 ×1.2

98 ×0.8

CMP

82 ×1.1

Citations per year, relative to H. Fitouri H. Fitouri (= 1×) peers А. В. Соломонов

Countries citing papers authored by H. Fitouri

Since Specialization

Citations

This map shows the geographic impact of H. Fitouri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Fitouri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Fitouri more than expected).

Fields of papers citing papers by H. Fitouri

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Fitouri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Fitouri. The network helps show where H. Fitouri may publish in the future.

Co-authorship network of co-authors of H. Fitouri

This figure shows the co-authorship network connecting the top 25 collaborators of H. Fitouri. A scholar is included among the top collaborators of H. Fitouri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Fitouri. H. Fitouri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Fitouri, H., et al.. (2024). MOVPE growth and characterization of GaAs/GaAsBi/GaAs p-i-n structure. Optical Materials. 155. 115822–115822. 1 indexed citations

Fitouri, H., et al.. (2023). Thermal annealing effects on the physical properties of GaAsBi/GaAs/GaAs:Si structure. Journal of Umm Al-Qura University for Applied Sciences. 9(2). 164–175. 2 indexed citations

Fitouri, H., et al.. (2020). A Systematic Methodology for the Analysis of Multicomponent Photoreflectance Spectra Applied to GaAsBi/GaAs Structure. Physics of the Solid State. 62(6). 1060–1066. 5 indexed citations

Fitouri, H., et al.. (2019). In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy. Materials Science and Engineering B. 241. 22–26. 4 indexed citations

Fitouri, H., et al.. (2017). TEMPERATURE DEPENDENCE ON THE MORPHOLOGICAL EVOLUTION OF DILUTE InAsBi/GaAs NANOSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY. Surface Review and Letters. 24(8). 1750105–1750105. 3 indexed citations

Bouzidi, Mohamed, N. Sghaier, H. Fitouri, et al.. (2016). Photothermal deflection investigation of thermally oxidized mesoporous silicon. Optik. 127(10). 4261–4266. 4 indexed citations

Fitouri, H., et al.. (2015). Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy. Materials Letters. 152. 298–301. 13 indexed citations

Fitouri, H., et al.. (2015). Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys. Optical Materials. 42. 67–71. 29 indexed citations

Fitouri, H., et al.. (2014). Thermodynamic study of the ternary system gallium‐arsenic‐bismuth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 12(1-2). 138–141. 9 indexed citations

10.

Sghaier, N., et al.. (2014). Analysis of optical and thermal properties of thermally oxidized mesoporous silicon layers. Microporous and Mesoporous Materials. 204. 137–142. 5 indexed citations

11.

Fitouri, H., et al.. (2013). Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy. Applied Surface Science. 291. 40–44. 13 indexed citations

12.

Fitouri, H., et al.. (2013). Atmospheric-pressure metal–organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates. Journal of Physics and Chemistry of Solids. 75(2). 244–251. 12 indexed citations

13.

Fitouri, H., et al.. (2011). Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 330(1). 35–38. 24 indexed citations

14.

Fitouri, H., et al.. (2010). Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction. Microelectronic Engineering. 88(4). 476–479. 24 indexed citations

15.

Fitouri, H., et al.. (2008). Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy. Thin Solid Films. 516(23). 8372–8376. 51 indexed citations

16.

Fitouri, H., et al.. (2008). Effect of thermal annealing on structural and optical properties of the GaAs_0.963Bi_0.037alloy. Semiconductor Science and Technology. 23(12). 125034–125034. 36 indexed citations

17.

Halidou, I., et al.. (2007). GaN property evolution at all stages of MOVPE Si/N treatment growth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(1). 129–132. 16 indexed citations

18.

Fitouri, H., et al.. (2006). Surface analysis of different oriented GaAs substrates annealed under bismuth flow. Journal of Crystal Growth. 300(2). 347–352. 32 indexed citations

19.

Fitouri, H., et al.. (2006). AP-MOVPE of thin GaAs1−xBix alloys. Journal of Crystal Growth. 295(2). 114–118. 37 indexed citations

20.

Fitouri, H., et al.. (2006). Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment. Applied Surface Science. 253(1). 258–260. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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