D. Manger

879 total citations
21 papers, 401 citations indexed

About

D. Manger is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, D. Manger has authored 21 papers receiving a total of 401 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 3 papers in Mechanics of Materials. Recurrent topics in D. Manger's work include Semiconductor materials and devices (12 papers), Copper Interconnects and Reliability (7 papers) and Radio Frequency Integrated Circuit Design (6 papers). D. Manger is often cited by papers focused on Semiconductor materials and devices (12 papers), Copper Interconnects and Reliability (7 papers) and Radio Frequency Integrated Circuit Design (6 papers). D. Manger collaborates with scholars based in Germany, United States and Canada. D. Manger's co-authors include W. Liebl, J. Böck, B. Heinemann, H. Rücker, Alain E. Kaloyeros, Klaus Aufinger, Rudolf Lachner, Andreas B. Pribil, S. Boguth and Christian Wipf and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Electron Device Letters.

In The Last Decade

D. Manger

19 papers receiving 381 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Manger Germany 11 366 67 61 56 52 21 401
Takashi Yunogami Japan 9 294 0.8× 65 1.0× 30 0.5× 69 1.2× 96 1.8× 13 320
Justin C. Hackley United States 9 322 0.9× 33 0.5× 68 1.1× 10 0.2× 258 5.0× 11 395
G. Giroult-Matlakowski France 6 334 0.9× 20 0.3× 108 1.8× 33 0.6× 96 1.8× 12 354
F. Milési France 10 294 0.8× 20 0.3× 113 1.9× 23 0.4× 67 1.3× 56 325
Sivananda Kanakasabapathy United States 7 175 0.5× 51 0.8× 49 0.8× 51 0.9× 42 0.8× 13 217
Christoph S. Werner Germany 11 197 0.5× 80 1.2× 211 3.5× 21 0.4× 122 2.3× 26 346
J.A. Babcock United States 15 665 1.8× 46 0.7× 77 1.3× 9 0.2× 79 1.5× 29 681
В. В. Миленин Ukraine 9 212 0.6× 26 0.4× 191 3.1× 17 0.3× 65 1.3× 69 306
T.L. McDevitt United States 5 270 0.7× 128 1.9× 97 1.6× 36 0.6× 76 1.5× 11 339
E. Delos France 9 252 0.7× 99 1.5× 88 1.4× 19 0.3× 60 1.2× 21 319

Countries citing papers authored by D. Manger

Since Specialization
Citations

This map shows the geographic impact of D. Manger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Manger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Manger more than expected).

Fields of papers citing papers by D. Manger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Manger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Manger. The network helps show where D. Manger may publish in the future.

Co-authorship network of co-authors of D. Manger

This figure shows the co-authorship network connecting the top 25 collaborators of D. Manger. A scholar is included among the top collaborators of D. Manger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Manger. D. Manger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Manger, D., Klaus Aufinger, S. Boguth, et al.. (2020). (Invited) Integration of an Epitaxial-Base-Link HBT Device with fT = 300GHz, fmax 480GHz in 90nm CMOS. ECS Transactions. 98(5). 101–110. 1 indexed citations
2.
Chevalier, P., W. Liebl, H. Rücker, et al.. (2018). SiGe BiCMOS Current Status and Future Trends in Europe. 64–71. 52 indexed citations
3.
4.
Manger, D., W. Liebl, S. Boguth, et al.. (2018). Integration of SiGe HBT with f T =305GHz, f max =537GHz in 130nm and 90nm CMOS.. 76–79. 2 indexed citations
5.
Liebl, W., Klaus Aufinger, D. Manger, et al.. (2016). (Invited) SiGe Applications in Automotive Radars. ECS Transactions. 75(8). 91–102. 6 indexed citations
6.
Böck, J., Klaus Aufinger, S. Boguth, et al.. (2015). SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project. 121–124. 125 indexed citations
7.
Fox, A., B. Heinemann, H. Rücker, et al.. (2015). Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology. IEEE Electron Device Letters. 36(7). 642–644. 28 indexed citations
8.
Engelhart, P., D. Manger, A. A. Stekolnikov, et al.. (2011). Q.ANTUM – Q-Cells Next Generation High-Power Silicon Cell & Module Concept. EU PVSEC. 821–826. 22 indexed citations
9.
Manger, D., B. Kaczer, N. Menou, et al.. (2009). Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers. Microelectronic Engineering. 86(7-9). 1815–1817. 15 indexed citations
10.
Schroeder, Uwe, S. Jakschik, S. Kudelka, et al.. (2009). New Materials in Memory Development Sub 50 nm: Trends in Flash and DRAM. Advanced Engineering Materials. 11(4). 241–248. 29 indexed citations
11.
Manger, D., et al.. (2005). Highly scalable sub-50nm vertical double gate trench DRAM cell. 57–60. 2 indexed citations
12.
Álvarez, David, Bernd Goebel, D. Manger, et al.. (2004). High-resolution scanning spreading resistance microscopy of surrounding-gate transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 377–380. 2 indexed citations
13.
Goebel, Bernd, et al.. (2003). Fully depleted surrounding gate transistor (SGT) for 70 nm DRAM and beyond. 275–278. 12 indexed citations
14.
Ivers, T., P. McLaughlin, Alasdair McDonald, et al.. (2002). Integration of copper and fluorosilicate glass for 0.18 μm interconnections. 219–221.
15.
16.
Goldberg, Cindy, A. Upham, D. Manger, et al.. (1997). Barrier Properties of Titanium Nitride Films Grown by Low Temperature Chemical Vapor Deposition from Titanium Tetraiodide. Journal of The Electrochemical Society. 144(3). 1002–1008. 37 indexed citations
17.
Burke, Aaron R., D. Manger, Eric Eisenbraun, et al.. (1997). Profile simulation of conformality of chemical vapor deposited copper in subquarter-micron trench and via structures. Journal of Applied Physics. 82(9). 4651–4660. 24 indexed citations
18.
Goldberg, Cindy, A. Upham, D. Manger, et al.. (1997). ChemInform Abstract: Barrier Properties of Titanium Nitride Films Grown by Low Temperature Chemical Vapor Deposition from Titanium Tetraiodide.. ChemInform. 28(26). 1 indexed citations
19.
Manger, D., Aaron R. Burke, G. G. Peterson, et al.. (1996). Chemical vapor deposition of copper from CuI hexafluoroacetylacetonate trimethylvinylsilane for ultralarge scale integration applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 1828–1836. 29 indexed citations
20.
Burke, Aaron R., et al.. (1995). Chemical vapor deposition based copper interconnects for ULSI multilevel metallization schemes.. 331–333. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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