В. А. Симаков

487 total citations
64 papers, 341 citations indexed

About

В. А. Симаков is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Instrumentation. According to data from OpenAlex, В. А. Симаков has authored 64 papers receiving a total of 341 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 40 papers in Atomic and Molecular Physics, and Optics and 11 papers in Instrumentation. Recurrent topics in В. А. Симаков's work include Semiconductor Quantum Structures and Devices (35 papers), Semiconductor Lasers and Optical Devices (34 papers) and Laser Design and Applications (27 papers). В. А. Симаков is often cited by papers focused on Semiconductor Quantum Structures and Devices (35 papers), Semiconductor Lasers and Optical Devices (34 papers) and Laser Design and Applications (27 papers). В. А. Симаков collaborates with scholars based in Russia and Ukraine. В. А. Симаков's co-authors include А. А. Маrmalyuk, М. А. Ладугин, N. A. Pikhtin, S. O. Slipchenko, I. S. Tarasov, А. А. Падалица, A. A. Podoskin, A. Yu. Leshko, V. V. Shamakhov and А. В. Иванов and has published in prestigious journals such as Journal of Applied Physics, Optics Express and IEEE Transactions on Electron Devices.

In The Last Decade

В. А. Симаков

54 papers receiving 317 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
В. А. Симаков Russia 11 305 220 55 34 18 64 341
A. A. Podoskin Russia 13 351 1.2× 273 1.2× 88 1.6× 28 0.8× 24 1.3× 76 398
М. А. Ладугин Russia 13 399 1.3× 316 1.4× 67 1.2× 63 1.9× 19 1.1× 98 448
V. V. Shamakhov Russia 11 333 1.1× 274 1.2× 19 0.3× 34 1.0× 5 0.3× 55 362
P. Thiagarajan United States 10 284 0.9× 204 0.9× 16 0.3× 37 1.1× 45 316
N. Lagay France 9 293 1.0× 168 0.8× 50 0.9× 13 0.4× 1 0.1× 34 315
Alexander Sahm Germany 12 283 0.9× 247 1.1× 6 0.1× 52 1.5× 1 0.1× 55 352
Zhibin Zhao China 11 287 0.9× 261 1.2× 18 0.3× 13 0.4× 23 341
Ranko Hatsuda Japan 8 316 1.0× 311 1.4× 10 0.2× 6 0.2× 15 372
Marwan Bou Sanayeh Germany 10 281 0.9× 187 0.8× 7 0.1× 19 0.6× 30 322
Gordon Morrison United States 9 256 0.8× 137 0.6× 3 0.1× 12 0.4× 4 0.2× 53 287

Countries citing papers authored by В. А. Симаков

Since Specialization
Citations

This map shows the geographic impact of В. А. Симаков's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В. А. Симаков with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В. А. Симаков more than expected).

Fields of papers citing papers by В. А. Симаков

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В. А. Симаков. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В. А. Симаков. The network helps show where В. А. Симаков may publish in the future.

Co-authorship network of co-authors of В. А. Симаков

This figure shows the co-authorship network connecting the top 25 collaborators of В. А. Симаков. A scholar is included among the top collaborators of В. А. Симаков based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В. А. Симаков. В. А. Симаков is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Podoskin, A. A., S. O. Slipchenko, N. A. Pikhtin, et al.. (2024). Temperature Dependence of the Output Optical Power of Semiconductor Lasers–Thyristors Based on AlGaAs/GaAs/InGaAs Heterostructures. Bulletin of the Lebedev Physics Institute. 51(S7). S525–S532.
2.
Slipchenko, S. O., et al.. (2024). Hetero-integrated high-peak-optical-power laser source (940 nm) for time-of-flight sensors. Chinese Optics Letters. 22(7). 72501–72501.
3.
Slipchenko, S. O., A. A. Podoskin, A. Yu. Leshko, et al.. (2023). Source of High-Power, High-Repetition-Rate, Pulsed Laser Radiation (1060 nm) Based on a Hybrid Stack of a Laser Diode Bar and a 2D Array of Optothyristors as a High-Speed Current Switch. Bulletin of the Lebedev Physics Institute. 50(S5). S527–S534.
4.
Slipchenko, S. O., A. A. Podoskin, N. A. Pikhtin, et al.. (2021). Low-Voltage Thyristor Heterostructure for High-Current Pulse Generation at High Repetition Rate. IEEE Transactions on Electron Devices. 68(6). 2855–2860. 3 indexed citations
5.
Slipchenko, S. O., A. A. Podoskin, M. G. Rastegaeva, et al.. (2020). High-Power and Repetion Rate Nanosecond Pulse Generation in “Diode Laser—Thyristor” Stacks. IEEE Photonics Technology Letters. 33(1). 11–14. 6 indexed citations
6.
Ладугин, М. А., А. А. Падалица, А. А. Маrmalyuk, et al.. (2020). Triple integrated laser – thyristor. Quantum Electronics. 50(11). 1001–1003. 1 indexed citations
7.
Podoskin, A. A., S. O. Slipchenko, N. A. Pikhtin, et al.. (2019). Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm). Semiconductor Science and Technology. 34(6). 65025–65025.
8.
Маrmalyuk, А. А., et al.. (2019). AlGaInAs/InP semiconductor lasers with an increased electron barrier. Quantum Electronics. 49(6). 519–521. 1 indexed citations
9.
Данилов, А. И., et al.. (2019). Experimental studies of 1.5 – 1.6 μm high-power asymmetric-waveguide multimode lasers. Quantum Electronics. 49(7). 649–652. 6 indexed citations
10.
Симаков, В. А., et al.. (2016). X-ray spectral determination of gold in geological samples after its concentration by low-temperature fire assay. Inorganic Materials. 52(14). 1440–1443.
11.
Podoskin, A. A., N. A. Pikhtin, I. S. Tarasov, et al.. (2016). Laser-thyristors as a source of high-power laser pulses with a pulse width of 1–100 ns. 62. R3–9. 1 indexed citations
12.
Slipchenko, S. O., A. A. Podoskin, N. A. Pikhtin, et al.. (2016). High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9751. 97510P–97510P. 3 indexed citations
13.
Podoskin, A. A., N. A. Pikhtin, I. S. Tarasov, et al.. (2015). Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures. Semiconductor Science and Technology. 30(12). 125011–125011. 12 indexed citations
14.
Slipchenko, S. O., A. A. Podoskin, A. V. Rozhkov, et al.. (2014). A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm. Journal of Applied Physics. 116(8). 15 indexed citations
15.
Маrmalyuk, А. А., et al.. (2014). Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures. Semiconductors. 48(1). 115–119. 1 indexed citations
16.
Ладугин, М. А., et al.. (2013). High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm. Quantum Electronics. 43(9). 819–821. 4 indexed citations
17.
Ладугин, М. А., et al.. (2009). High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm. Quantum Electronics. 39(8). 723–726. 9 indexed citations
18.
Vinokurov, D. A., М. А. Ладугин, А. А. Маrmalyuk, et al.. (2009). A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD. Semiconductors. 43(9). 1213–1216. 5 indexed citations
19.
Маrmalyuk, А. А., et al.. (2002). High-power semiconductor 0.89 — 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures. Quantum Electronics. 32(3). 213–215. 6 indexed citations
20.
Симаков, В. А., et al.. (1983). Fiber-optic ring interferometer with a multimode waveguide. Soviet Journal of Quantum Electronics. 13(10). 1403–1405. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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