C. Nyamhere

545 citations

41 papers · 454 indexed · h-index 11

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Chalcogenide Semiconductor Thin Films
- Silicon Carbide Semiconductor Technologies

Papers in

Atomic and Molecular Physics, and Optics 29
- Semiconductor materials and interfaces 29
Electrical and Electronic Engineering 40
- Semiconductor materials and devices 24
- Silicon and Solar Cell Technologies 21
- Integrated Circuits and Semiconductor Failure Analysis 15
- Thin-Film Transistor Technologies 3

Co-authors: F.D. Auret W. Mtangi A. Chawanda P.J. Janse van Rensburg J.M. Nel Mmantsae Diale W.E. Meyer S.M.M. Coelho
Journals: Physica B Condensed Matter (17 papers)Journal of Applied Physics (5 papers)Materials Science and Engineering B (3 papers)Journal of Alloys and Compounds (2 papers)Materials Science in Semiconductor Processing (2 papers)
Partner nations: South Africa Zimbabwe Germany

In The Last Decade

C. Nyamhere

41 papers receiving 444 citations

Peers

Countries citing papers authored by C. Nyamhere

Since Specialization

Citations

This map shows the geographic impact of C. Nyamhere's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Nyamhere with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Nyamhere more than expected).

Fields of papers citing papers by C. Nyamhere

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Nyamhere. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Nyamhere. The network helps show where C. Nyamhere may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. Nyamhere, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Nyamhere Line = papers co-authored together C. Nyamhere links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Remote poultry management system for small to medium scale producers using IoT Scientific African ·Bárbara Vieira Pimentel, Nola Mahingen, C. Nyamhere, Hana Sýkorová, Brad Dennis	2022	15
2	Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range Materials Science and Engineering B ·Edo Kozorog, F.D. Auret, доц Гаспарян доц, Qing Hong Wu, C. Nyamhere, E. Igumbor, A. Chawanda	2019	26
3	Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide Physica B Condensed Matter ·Edo Kozorog, A. Chawanda, C. Nyamhere, F.D. Auret, Nola Mahingen, Magdalena Figueredo, Maria Cristina Andrioti, E. Omotoso, доц Гаспарян доц, Qing Hong Wu	2017	29
4	A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices Journal of Applied Physics ·C. Nyamhere, О.Б. Поливанова, Andreas Schenk, V.S. Garkushevsky, Liang‐Ying Chou, F. Cristiano	2015	6
5	Ar plasma induced deep levels in epitaxial n-GaAs Journal of Applied Physics ·Josef Mari M. Ocampo, C. Nyamhere, J.R. Botha, F.D. Auret, P.J. Janse van Rensburg, W.E. Meyer, S.M.M. Coelho, F. Mavie	2012	5
6	Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO Physica B Condensed Matter ·W. Mtangi, J.M. Nel, F.D. Auret, A. Chawanda, Mmantsae Diale, C. Nyamhere	2011	9
7	Electrical characterisation of ruthenium Schottky contacts on n-Ge (100) Physica B Condensed Matter ·A. Chawanda, C. Nyamhere, F.D. Auret, J.M. Nel, W. Mtangi, Tianci Ren	2011	4
8	Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100) Journal of Alloys and Compounds ·A. Chawanda, S.M.M. Coelho, F.D. Auret, W. Mtangi, C. Nyamhere, J.M. Nel, Mmantsae Diale	2011	10
9	dc-Hydrogen plasma induced defects in bulk n-Ge Physica B Condensed Matter ·C. Nyamhere, Josef Mari M. Ocampo, М.Х. Холиков, F.D. Auret, S.M.M. Coelho, J.R. Botha	2011	3
10	Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes Journal of the Korean Physical Society ·A. Chawanda, J.M. Nel, F.D. Auret, W. Mtangi, C. Nyamhere, Mmantsae Diale, Hugo Boissevain	2010	10
11	Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range Materials Science and Engineering B ·W. Mtangi, P.J. Janse van Rensburg, Mmantsae Diale, F.D. Auret, C. Nyamhere, J.M. Nel, A. Chawanda	2010	26
12	Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·A. Chawanda, C. Nyamhere, F.D. Auret, W. Mtangi, Mmantsae Diale, J.M. Nel	2010	9
13	Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process Physica B Condensed Matter ·A. Chawanda, C. Nyamhere, F.D. Auret, W. Mtangi, T.T. Hlatshwayo, Mmantsae Diale, J.M. Nel	2009	11
14	A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation Surface and Coatings Technology ·pTanya Moseleyp, C. Nyamhere, F.D. Auret, M. Hayes	2009	5
15	Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0) Journal of Alloys and Compounds ·A. Chawanda, C. Nyamhere, F.D. Auret, W. Mtangi, Mmantsae Diale, J.M. Nel	2009	26
16	Deep level transient spectroscopy characterization of defects introduced inp-Si by electron beam deposition and proton irradiation Journal of Physics Conference Series ·C. Nyamhere, pTanya Moseleyp, F.D. Auret, Nick DiNardi	2008	2
17	IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·S.M.M. Coelho, F.D. Auret, Olga A. Ukhanova, C. Nyamhere, J.M. Nel, M. Hayes	2007	2
18	Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge Journal of Electronic Materials ·F.D. Auret, S.M.M. Coelho, W.E. Meyer, C. Nyamhere, M. Hayes, J.M. Nel	2007	9
19	Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition Physica B Condensed Matter ·C. Nyamhere, A. Chawanda, pTanya Moseleyp, F.D. Auret, M. Hayes	2007	2
20	Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·F.D. Auret, pTanya Moseleyp, C. Nyamhere, M. Hayes, N.G. van der Berg	2005	3

About C. Nyamhere

C. Nyamhere is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Computational Mechanics and Materials Chemistry, having authored 41 papers that have together received 454 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (29 papers), Semiconductor materials and devices (24 papers), Silicon and Solar Cell Technologies (21 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers), Ion-surface interactions and analysis (4 papers), Electron and X-Ray Spectroscopy Techniques (3 papers), Silicon Nanostructures and Photoluminescence (3 papers) and Thin-Film Transistor Technologies (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (299 citations), Electrical and Electronic Engineering (360 citations), Materials Chemistry (137 citations), Condensed Matter Physics (30 citations) and Polymers and Plastics (21 citations). C. Nyamhere has collaborated with scholars based in South Africa, Zimbabwe and Germany. Frequent co-authors include F.D. Auret, W. Mtangi, A. Chawanda, P.J. Janse van Rensburg, J.M. Nel, Mmantsae Diale, W.E. Meyer, S.M.M. Coelho, J.R. Botha and M. Hayes. Their work appears in journals such as Physica B Condensed Matter, Journal of Applied Physics, Materials Science and Engineering B, Journal of Alloys and Compounds and Materials Science in Semiconductor Processing.

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