E. Igumbor

460 citations

44 papers · 361 indexed · h-index 11

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
Electrical and Electronic Engineering
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Chalcogenide Semiconductor Thin Films

Papers in

Atomic and Molecular Physics, and Optics 27
- Semiconductor materials and interfaces 22
Electrical and Electronic Engineering 35
- Semiconductor materials and devices 17
- Silicon and Solar Cell Technologies 10
- Silicon Carbide Semiconductor Technologies 9
- Chalcogenide Semiconductor Thin Films 5
- Integrated Circuits and Semiconductor Failure Analysis 5

Co-authors: W.E. Meyer R.E. Mapasha E. Omotoso O. Olaniyan F.D. Auret A.A. Khaleed Ncholu Manyala Kingsley Onyebuchi Obodo
Journals: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (7 papers)Physica B Condensed Matter (6 papers)Materials Science in Semiconductor Processing (3 papers)Journal of Electronic Materials (3 papers)Journal of Physics Condensed Matter (2 papers)
Partner nations: South Africa Nigeria Cameroon

In The Last Decade

E. Igumbor

44 papers receiving 353 citations

Peers

Countries citing papers authored by E. Igumbor

Since Specialization

Citations

This map shows the geographic impact of E. Igumbor's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Igumbor with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Igumbor more than expected).

Fields of papers citing papers by E. Igumbor

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Igumbor. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Igumbor. The network helps show where E. Igumbor may publish in the future.

Co-authorship network

The 25 scholars most cited alongside E. Igumbor, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Igumbor Line = papers co-authored together E. Igumbor links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Electrical activity of aluminum, boron, and n-type impurities defect-complexes in germanium: Implications for enhanced Ge-based devices Surface Science ·E. Igumbor, Suguru Miura, A.T. Raji, E. Omotoso	2025	1
2	Exploring defect engineering in monolayer TiS3 for next-generation electronic devices: Insights from first-principles study Computational Condensed Matter ·Sarada VL Dronamraju, E. Igumbor, Elizete Aparecida Checon de Freitas-Lima, A.T. Raji, E. B. Lombardi	2024	1
3	Infectiousness model of expelled droplets exposed to ultraviolet germicidal irradiation coupled with evaporation Computers & Fluids ·Werner Wendt, E. Igumbor, M. Bhamjee, Kennedy Otwombe, А. Карасёваb, Suying Qi, Neil Martinson, ايهاب عبدالعزيز, L. L. Leeuw, S. H. Connell	2024	2
4	Vanadium embedded in monolayer silicene: Energetics and proximity-induced magnetism Journal of Applied Physics ·A.T. Raji, I. Aniton-Lamprecht, Elizete Aparecida Checon de Freitas-Lima, Sarada VL Dronamraju, E. Igumbor, E. B. Lombardi	2024	1
5	Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium Journal of Computational Electronics ·E. Igumbor	2024	2
6	DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC Journal of Materials Science Materials in Electronics ·E. Omotoso, W.E. Meyer, E. Igumbor, T.T. Hlatshwayo, A. R. E. Prinsloo, F.D. Auret, C. J. Sheppard	2022	4
7	Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width Materials Research Express ·E. Omotoso, Paula Guletsky, E. Igumbor, Bidini A. Taleatu, W.E. Meyer, F.D. Auret	2020	5
8	Tuning the electronic structure and thermodynamic properties of hybrid graphene-hexagonal boron nitride monolayer FlatChem ·O. Olaniyan, Lyudmila V. Moskaleva, MohamedA Nassef, E. Igumbor, Abdulhakeem Bello	2020	10
9	Ab-initio study of the optical properties of beryllium-sulphur co-doped graphene AIP Advances ·O. Olaniyan, E. Igumbor, A.A. Khaleed, Abdulmajid A. Mirghni, Ncholu Manyala	2019	9
10	Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon AIP conference proceedings ·доц Гаспарян доц, F.D. Auret, Qing Hong Wu, E. Omotoso, E. Igumbor, W.E. Meyer	2019	2
11	Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge Journal of Materials Science ·E. Igumbor, Sarada VL Dronamraju, R.E. Mapasha, W.E. Meyer	2019	8
12	Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC Journal of Physics Condensed Matter ·E. Igumbor, O. Olaniyan, R.E. Mapasha, доц Гаспарян доц, E. Omotoso, W.E. Meyer	2018	6
13	Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study Materials Science in Semiconductor Processing ·E. Igumbor, O. Olaniyan, R.E. Mapasha, доц Гаспарян доц, E. Omotoso, W.E. Meyer	2018	8
14	Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Qing Hong Wu, F.D. Auret, J.M. Nel, E. Omotoso, доц Гаспарян доц, E. Igumbor, Mmantsae Diale	2017	10
15	The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·E. Omotoso, W.E. Meyer, P.J. Janse van Rensburg, E. Igumbor, Qing Hong Wu, 卫兴华, доц Гаспарян доц, F.D. Auret	2017	14
16	A hybrid density functional study of silicon and phosphorus doped hexagonal boron nitride monolayer Journal of Physics Conference Series ·R.E. Mapasha, E. Igumbor, N. Chetty	2016	6
17	Ab␣Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE) Journal of Electronic Materials ·E. Igumbor, R.E. Mapasha, W.E. Meyer	2016	11
18	A first principle hybrid functional calculation ofTmGe3+-VGedefect complexes in germanium Computational Condensed Matter ·E. Igumbor, R.E. Mapasha, R. C. Andrew, W.E. Meyer	2016	11
19	<i>Ab Initio</i> Study of MgSe Self-Interstitial (Mg<i><sub>i</sub> </i>and Se<i><sub>i</sub></i>) Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·E. Igumbor, Kingsley Onyebuchi Obodo, W.E. Meyer	2015	9
20	Silicene and transition metal based materials: prediction of a two-dimensional piezomagnet Journal of Physics Condensed Matter ·Nelson Y. Dzade, Kingsley Onyebuchi Obodo, Sampson Adjokatse, Collins Ashu Akosa, Emmanuel Amankwah, Antony Charls, Abdulhakeem Bello, E. Igumbor, Петро Григорович Копитко, Andrew Elias-Gonzalez, Raissa Lou, Olu Emmanuel Femi, DEBORAH HOWARD, Umesh V. Waghmare	2010	54

About E. Igumbor

E. Igumbor is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Modeling and Simulation and Ceramics and Composites, having authored 44 papers that have together received 361 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (22 papers), Semiconductor materials and devices (17 papers), Graphene research and applications (11 papers), Silicon and Solar Cell Technologies (10 papers), Silicon Carbide Semiconductor Technologies (9 papers), 2D Materials and Applications (7 papers), Chalcogenide Semiconductor Thin Films (5 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (166 citations), Electrical and Electronic Engineering (254 citations), Materials Chemistry (199 citations), Condensed Matter Physics (31 citations) and Electronic, Optical and Magnetic Materials (38 citations). E. Igumbor has collaborated with scholars based in South Africa, Nigeria and Cameroon. Frequent co-authors include W.E. Meyer, R.E. Mapasha, E. Omotoso, O. Olaniyan, F.D. Auret, A.A. Khaleed, Ncholu Manyala, Kingsley Onyebuchi Obodo, Abdulhakeem Bello and M.J. Madito. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Physica B Condensed Matter, Materials Science in Semiconductor Processing, Journal of Electronic Materials and Journal of Physics Condensed Matter.

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