Fangzhen Wu

469 total citations
34 papers, 389 citations indexed

About

Fangzhen Wu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Fangzhen Wu has authored 34 papers receiving a total of 389 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Fangzhen Wu's work include Silicon Carbide Semiconductor Technologies (31 papers), Silicon and Solar Cell Technologies (26 papers) and Thin-Film Transistor Technologies (14 papers). Fangzhen Wu is often cited by papers focused on Silicon Carbide Semiconductor Technologies (31 papers), Silicon and Solar Cell Technologies (26 papers) and Thin-Film Transistor Technologies (14 papers). Fangzhen Wu collaborates with scholars based in United States, Japan and China. Fangzhen Wu's co-authors include Michael Dudley, Balaji Raghothamachar, Edward Sanchez, Mark J. Loboda, Stephan G. Mueller, Shayan Byrappa, Gil Yong Chung, David Hansen, Tianyi Zhou and Yu Yang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Fangzhen Wu

34 papers receiving 383 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Fangzhen Wu United States	13	330	105	77	64	57	34	389
Shiyang Ji Japan	13	398 1.2×	161 1.5×	122 1.6×	49 0.8×	91 1.6×	58	470
Hervé Peyre France	12	331 1.0×	101 1.0×	98 1.3×	50 0.8×	93 1.6×	55	372
M. P. Shcheglov Russia	8	159 0.5×	77 0.7×	66 0.9×	138 2.2×	103 1.8×	64	294
Katsuki Furukawa Japan	10	359 1.1×	117 1.1×	91 1.2×	55 0.9×	109 1.9×	17	426
M. Roth United States	12	364 1.1×	121 1.2×	119 1.5×	131 2.0×	79 1.4×	25	441
E. Downey United States	8	376 1.1×	93 0.9×	75 1.0×	55 0.9×	76 1.3×	11	424
弘之松波	3	393 1.2×	97 0.9×	79 1.0×	25 0.4×	122 2.1×	5	450
Stephan G. Mueller United States	12	283 0.9×	106 1.0×	139 1.8×	176 2.8×	102 1.8×	32	454
Takashi Aigo Japan	12	436 1.3×	115 1.1×	90 1.2×	42 0.7×	43 0.8×	38	481
Véronique Soulière France	11	312 0.9×	153 1.5×	68 0.9×	23 0.4×	122 2.1×	74	388

Countries citing papers authored by Fangzhen Wu

Since Specialization

Citations

This map shows the geographic impact of Fangzhen Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fangzhen Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fangzhen Wu more than expected).

Fields of papers citing papers by Fangzhen Wu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fangzhen Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fangzhen Wu. The network helps show where Fangzhen Wu may publish in the future.

Co-authorship network of co-authors of Fangzhen Wu

This figure shows the co-authorship network connecting the top 25 collaborators of Fangzhen Wu. A scholar is included among the top collaborators of Fangzhen Wu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fangzhen Wu. Fangzhen Wu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yang, Yu, Fangzhen Wu, Joseph J. Sumakeris, et al.. (2016). Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method. Materials science forum. 858. 15–18. 10 indexed citations

Yang, Yu, et al.. (2015). Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method. Journal of Crystal Growth. 452. 39–43. 7 indexed citations

Yang, Yu, Fangzhen Wu, Balaji Raghothamachar, et al.. (2015). Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers. ECS Transactions. 69(11). 39–46. 1 indexed citations

Wu, Fangzhen, Yu Yang, Balaji Raghothamachar, et al.. (2015). Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC. Materials science forum. 821-823. 85–89. 4 indexed citations

Yang, Yu, et al.. (2015). Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method. ECS Transactions. 69(11). 33–38. 1 indexed citations

Wu, Fangzhen, Yu Yang, Balaji Raghothamachar, et al.. (2014). Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer. Materials science forum. 778-780. 332–337. 8 indexed citations

Wang, Huanhuan, Fangzhen Wu, Balaji Raghothamachar, et al.. (2014). Studies of Relaxation Processes and Basal Plane Dislocations in CVD Grown Homoepitaxial Layers of 4H-SiC. ECS Transactions. 64(7). 213–222. 3 indexed citations

Wang, H., Michael Dudley, Fangzhen Wu, et al.. (2014). Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC. Journal of Electronic Materials. 44(5). 1268–1274. 7 indexed citations

Wu, Fangzhen, Huanhuan Wang, Balaji Raghothamachar, et al.. (2014). Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC. MRS Proceedings. 1693. 3 indexed citations

10.

Wu, Fangzhen, Huanhuan Wang, Balaji Raghothamachar, et al.. (2014). A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images. Journal of Applied Physics. 116(10). 1 indexed citations

11.

Wu, Fangzhen, Michael Dudley, Balaji Raghothamachar, et al.. (2014). Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography. Materials science forum. 778-780. 328–331. 13 indexed citations

12.

Wu, Fangzhen, Michael Dudley, Balaji Raghothamachar, et al.. (2013). The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC. Materials science forum. 740-742. 217–220. 19 indexed citations

13.

Zhou, Tianyi, Balaji Raghothamachar, Fangzhen Wu, & Michael Dudley. (2013). Grazing Incidence X-ray Topographic Studies of Threading Dislocations in Hydrothermal Grown ZnO Single Crystal Substrates. MRS Proceedings. 1494. 121–126. 11 indexed citations

14.

Wu, Fangzhen, Balaji Raghothamachar, Michael Dudley, et al.. (2012). Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults. Materials science forum. 717-720. 347–350. 11 indexed citations

15.

Wu, Fangzhen, Balaji Raghothamachar, Michael Dudley, et al.. (2012). Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC. Materials science forum. 717-720. 327–330. 14 indexed citations

16.

Wu, Fangzhen, Balaji Raghothamachar, Michael Dudley, et al.. (2012). Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC. Materials science forum. 717-720. 343–346. 13 indexed citations

17.

Dudley, Michael, Fangzhen Wu, Shayan Byrappa, et al.. (2011). Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC. Applied Physics Letters. 98(23). 56 indexed citations

18.

Müller, St.G., Edward Sanchez, David M. Hansen, et al.. (2011). Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications. Journal of Crystal Growth. 352(1). 39–42. 24 indexed citations

19.

Dudley, Michael, Shayan Byrappa, Huanhuan Wang, et al.. (2010). Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals. MRS Proceedings. 1246. 20 indexed citations

20.

Chichibu, Shigefusa F., Takeyoshi Onuma, Tadao Hashimoto, et al.. (2007). Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method. Applied Physics Letters. 91(25). 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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