S. Odanaka

1.1k total citations
74 papers, 742 citations indexed

About

S. Odanaka is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, S. Odanaka has authored 74 papers receiving a total of 742 indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in S. Odanaka's work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (51 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). S. Odanaka is often cited by papers focused on Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (51 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). S. Odanaka collaborates with scholars based in Japan and United States. S. Odanaka's co-authors include Akira Hiroki, T. Ohzone, G. Fuse, K. Yamashita, Motoyuki Fukumoto, Masaru Sasago, Takashi Hori, N. Nakayama, S. Kumashiro and Akihiro Shinohara and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S. Odanaka

68 papers receiving 702 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Odanaka Japan 17 700 88 74 47 32 74 742
P.E. Cottrell United States 19 1.1k 1.6× 142 1.6× 101 1.4× 45 1.0× 74 2.3× 40 1.2k
H. C. Pfeiffer United States 13 437 0.6× 89 1.0× 207 2.8× 30 0.6× 17 0.5× 46 527
C. Prasad United States 15 494 0.7× 156 1.8× 31 0.4× 42 0.9× 36 1.1× 54 596
S. P. Klepner United States 10 443 0.6× 210 2.4× 70 0.9× 49 1.0× 78 2.4× 19 570
R.J. Lomax United States 12 400 0.6× 173 2.0× 28 0.4× 38 0.8× 48 1.5× 43 486
D. Herrell United States 14 316 0.5× 172 2.0× 52 0.7× 45 1.0× 24 0.8× 34 466
Timothy J. Maloney United States 18 1.0k 1.5× 235 2.7× 69 0.9× 49 1.0× 76 2.4× 71 1.1k
T. Toyabe Japan 16 945 1.4× 78 0.9× 47 0.6× 34 0.7× 56 1.8× 53 988
Tetsuro Nakamura Japan 12 365 0.5× 82 0.9× 87 1.2× 58 1.2× 18 0.6× 37 435
R.B. Iverson United States 9 518 0.7× 96 1.1× 41 0.6× 300 6.4× 36 1.1× 18 585

Countries citing papers authored by S. Odanaka

Since Specialization
Citations

This map shows the geographic impact of S. Odanaka's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Odanaka with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Odanaka more than expected).

Fields of papers citing papers by S. Odanaka

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Odanaka. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Odanaka. The network helps show where S. Odanaka may publish in the future.

Co-authorship network of co-authors of S. Odanaka

This figure shows the co-authorship network connecting the top 25 collaborators of S. Odanaka. A scholar is included among the top collaborators of S. Odanaka based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Odanaka. S. Odanaka is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Odanaka, S., et al.. (2015). A Fermi-Dirac Statistics Based Quantum Energy Transport Model for High Mobility MOSFETs. 2(1). 153–170. 1 indexed citations
3.
Miura–Mattausch, M., Hans Jürgen Mattausch, S. Kumashiro, et al.. (2003). Precise physical modeling of the reverse-short-channel effect for circuit simulation. 207–210.
4.
Matsuda, T., et al.. (2003). A test structure for spectrum analysis of hot-carrier-induced photoemission from mosfets. IEEE Transactions on Semiconductor Manufacturing. 16(2). 233–238. 2 indexed citations
5.
Odanaka, S., et al.. (2002). Improvement of RSF for a statistical design of lithographic process. 2440. 74–77.
7.
Yamashita, K., et al.. (2002). Impact of the reduction of the gate to drain capacitance on low voltage operated CMOS devices. 69–70. 1 indexed citations
8.
Odanaka, S., et al.. (1995). TCAD : CHALLENGED TO VIRTUAL PROCESS. 4. 197–202.
9.
Odanaka, S., et al.. (1995). Massively parallel computation using a splitting-up operator method for three-dimensional device simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 14(7). 824–832. 4 indexed citations
10.
Odanaka, S., et al.. (1991). SMART-II: a three-dimensional CAD model for submicrometer MOSFET's. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 10(5). 619–628. 12 indexed citations
11.
Odanaka, S., et al.. (1991). A Three-Dimensional Dynamic Simulation of Borophosphosilicate Glass Flow. 99–100. 4 indexed citations
12.
Odanaka, S., et al.. (1991). Three-dimensional numerical simulation of local oxidation of silicon. IEEE Transactions on Electron Devices. 38(3). 505–511. 12 indexed citations
14.
Odanaka, S., et al.. (1989). Numerical modeling of nonplanar oxidation coupled with stress effects. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 8(6). 599–607. 14 indexed citations
15.
Hiroki, Akira, et al.. (1988). A mobility model for submicrometer MOSFET simulations including hot-carrier-induced device degradation. IEEE Transactions on Electron Devices. 35(9). 1487–1493. 26 indexed citations
16.
Fuse, G., Motoyuki Fukumoto, Akihiro Shinohara, et al.. (1987). A new isolation method with boron-implanted sidewalls for controlling narrow-width effect. IEEE Transactions on Electron Devices. 34(2). 356–360. 27 indexed citations
17.
Fuse, G., Hiroshi Ogawa, S. Odanaka, et al.. (1987). A practical trench isolation technology with a novel planarization process. 732–735. 29 indexed citations
18.
Fuse, G., et al.. (1986). Depth Profiles of Boron Atoms with Large Tilt‐Angle Implantations. Journal of The Electrochemical Society. 133(5). 996–998. 23 indexed citations
19.
Odanaka, S., et al.. (1986). A new half-micrometer p-channel MOSFET with efficient punchthrough stops. IEEE Transactions on Electron Devices. 33(3). 317–321. 13 indexed citations
20.
Fuse, G., S. Odanaka, Masaru Sasago, et al.. (1985). Trench Isolation with Boron Implanted Side-Walls for Controlling Narrow-Width Effect of n-MOS Threshold Voltages. Symposium on VLSI Technology. 58–59. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026