W. I. Wang

909 citations

36 papers · 724 indexed · h-index 16

Atomic and Molecular Physics, and Optics top 5%
Electrical and Electronic Engineering top 10%
Condensed Matter Physics top 10%
Materials Chemistry
Spectroscopy

Co-authors: E. E. Méndez R. Beresford L. F. Luo Hideo Ohno E. Calleja Y. Zhang B. V. Shanabrook O. J. Glembocki
Topics: Semiconductor Quantum Structures and Devices (31 papers)Quantum and electron transport phenomena (15 papers)Advanced Semiconductor Detectors and Materials (8 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Physical review. B, Condensed matter Applied Physics Letters Journal of Applied Physics
Partner nations: United States Germany Spain

In The Last Decade

W. I. Wang

36 papers receiving 694 citations

Peers

Countries citing papers authored by W. I. Wang

Since Specialization

Citations

This map shows the geographic impact of W. I. Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. I. Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. I. Wang more than expected).

Fields of papers citing papers by W. I. Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. I. Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. I. Wang. The network helps show where W. I. Wang may publish in the future.

Co-authorship network of co-authors of W. I. Wang

This figure shows the co-authorship network connecting the top 25 collaborators of W. I. Wang. A scholar is included among the top collaborators of W. I. Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. I. Wang. W. I. Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Mechanism of the reduction of dislocation density in epilayers grown on compliant substrates 2001 ·Journal of Applied Physics ·(unknown),(unknown),W. I. Wang,T. S. Kuan	9
2	Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures 2000 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·(unknown),(unknown),W. I. Wang,Sheyum Syed,D. Simonian,H. L. Störmer,D. V. Lang	3
3	Low threshold InGaAsN/GaAs single quantum welllasers grown by molecular beam epitaxy using Sb surfactant 1999 ·Electronics Letters ·Xiaoguang Yang,M. J. Jurkovic,J. B. Héroux,W. I. Wang	17
4	Positive and negative persistent photoconductivity in a two-side-dopedIn0.53Ga0.47As/In0.52Al0.48Asquantum well 1999 ·Physical review. B, Condensed matter ·Da‐Ren Hang,Y. F. Chen,F. F. Fang,W. I. Wang	4
5	Characterization of AuGe‐ and AuTe‐Based Ohmic Contacts on InAs n‐Channel High Electron Mobility Transistors 1997 ·Journal of The Electrochemical Society ·Yun Zhao,M. J. Jurkovic,W. I. Wang	8
6	Nitrogen Vacancy as the Donor: Experimental Evidence in the Ammonia‐Assisted Molecular Beam Epitaxy of GaN 1997 ·Journal of The Electrochemical Society ·Zhenhai Yang,(unknown),(unknown),W. I. Wang	11
7	Intrinsic bistability by charge accumulation in anL-valley state in GaSb-AlSb resonant-tunneling diodes 1995 ·Physical review. B, Condensed matter ·J. L. Jiménez,E. E. Méndez,(unknown),W. I. Wang	9
8	NORMAL-INCIDENCE INTERSUBBAND TRANSITIONS FOR INFRARED ELECTRO-OPTICAL MODULATION AND SECOND-HARMONIC GENERATION 1995 ·Journal of Nonlinear Optical Physics & Materials ·Huimin Xie,W. I. Wang,J. R. Meyer,C. A. Hoffman,L. R. Ram‐Mohan	1
9	Infrared electroabsorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells 1994 ·Journal of Applied Physics ·Huimin Xie,W. I. Wang,J. R. Meyer	9
10	Conservation of momentum, and its consequences, in interband resonant tunneling 1992 ·Physical review. B, Condensed matter ·E. E. Méndez,J. Nocera,W. I. Wang	23
11	Excitonic spectrum of [111] GaAs/GaxAl1−xAs quantum wells 1992 ·Physical review. B, Condensed matter ·L. Viña,(unknown),F. Calle,N. Mestres,J. M. Calleja,W. I. Wang	11
12	The Problem of Doping Wide Gap II-VI Compound Semiconductors and Its Solutions 1991 ·MRS Proceedings ·W. I. Wang	2
13	Magnetoresistance measurements of doping symmetry and strain effects in GaSb-AlSb quantum wells 1990 ·Applied Physics Letters ·(unknown),T. P. Smith,(unknown),R. Beresford,W. I. Wang	6
14	Molecular-beam epitaxial growth of metastable Ge1−xSnx alloys 1990 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·(unknown),R. Beresford,(unknown),W. I. Wang,H. Homma	34
15	Term spectrum of magnetoexcitons in quasi-two-dimensional systems 1990 ·Physical review. B, Condensed matter ·(unknown),G. Bauer,M. Potemski,J. C. Maan,E. E. Méndez,W. I. Wang	30
16	Effects of carrier mass differences on the current-voltage characteristics of resonant tunneling structures 1990 ·Applied Physics Letters ·Hideo Ohno,E. E. Méndez,W. I. Wang	23
17	Luttinger parameters for GaAs determined from the intersubband transitions inGaAs/AlxGa1−xAsmultiple quantum wells 1989 ·Physical review. B, Condensed matter ·B. V. Shanabrook,O. J. Glembocki,D. A. Broido,W. I. Wang	61
18	Enhancement of modulation bandwidth in InGaAs strained-layer single quantum well lasers 1989 ·Applied Physics Letters ·Kam Y. Lau,Sixu Xin,W. I. Wang,(unknown),M. Mittelstein	54
19	High angular-momentum excitons inGaAsGa1−xAlxAsquantum wells 1988 ·Physical review. B, Condensed matter ·L. Viña,G. Bauer,M. Potemski,J. C. Maan,E. E. Méndez,W. I. Wang	14
20	Orientation dependence of valence-subband structures in GaAs-Ga1−xAlxAs quantum-well structures 1988 ·Journal of Applied Physics ·Mau‐Phon Houng,Yia‐Chung Chang,W. I. Wang	46

About W. I. Wang

W. I. Wang is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 36 papers that have together received 724 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (31 papers), Quantum and electron transport phenomena (15 papers) and Advanced Semiconductor Detectors and Materials (8 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (658 citations), Electrical and Electronic Engineering (529 citations) and Condensed Matter Physics (98 citations). W. I. Wang has collaborated with scholars based in United States, Germany and Spain. Frequent co-authors include E. E. Méndez, R. Beresford, L. F. Luo, Hideo Ohno, E. Calleja, Y. Zhang, B. V. Shanabrook, O. J. Glembocki, Yia‐Chung Chang and Mau‐Phon Houng. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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