Atsushi Noya

793 total citations
74 papers, 705 citations indexed

About

Atsushi Noya is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Atsushi Noya has authored 74 papers receiving a total of 705 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 42 papers in Electronic, Optical and Magnetic Materials and 30 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Atsushi Noya's work include Semiconductor materials and devices (44 papers), Copper Interconnects and Reliability (42 papers) and Semiconductor materials and interfaces (29 papers). Atsushi Noya is often cited by papers focused on Semiconductor materials and devices (44 papers), Copper Interconnects and Reliability (42 papers) and Semiconductor materials and interfaces (29 papers). Atsushi Noya collaborates with scholars based in Japan. Atsushi Noya's co-authors include Mayumi B. Takeyama, Katsutaka Sasaki, Eiji Aoyagi, Takaomi Itoi, Akira Ohta, Masaru Sato, Yuichiro Hayasaka, Yoshihiro Nakata, T. Nakamura and Yasushi Kobayashi and has published in prestigious journals such as Journal of Applied Physics, Applied Surface Science and Thin Solid Films.

In The Last Decade

Atsushi Noya

71 papers receiving 684 citations

Peers

Countries citing papers authored by Atsushi Noya

Since Specialization

Citations

This map shows the geographic impact of Atsushi Noya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Atsushi Noya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Atsushi Noya more than expected).

Fields of papers citing papers by Atsushi Noya

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Atsushi Noya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Atsushi Noya. The network helps show where Atsushi Noya may publish in the future.

Co-authorship network of co-authors of Atsushi Noya

This figure shows the co-authorship network connecting the top 25 collaborators of Atsushi Noya. A scholar is included among the top collaborators of Atsushi Noya based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Atsushi Noya. Atsushi Noya is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Room-temperature deposition of HfN 2016 ·Japanese Journal of Applied Physics ·Masaru Sato, Mayumi B. Takeyama, Atsushi Noya	1
2	Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics 2016 ·Japanese Journal of Applied Physics ·Masaru Sato, Mayumi B. Takeyama, Yoshihiro Nakata, Yasushi Kobayashi, T. Nakamura, Atsushi Noya	6
3	Barrier properties of ultrathin VN films of low resistivity and high density for Cu interconnects 2016 ·Japanese Journal of Applied Physics ·Mayumi B. Takeyama, Masaru Sato, Takaomi Itoi, Eiji Aoyagi, Atsushi Noya	4
4	Preparation of nanocrystalline HfN 2014 ·Japanese Journal of Applied Physics ·Mayumi B. Takeyama, Masaru Sato, Eiji Aoyagi, Atsushi Noya	8
5	Preparation of nanocrystalline HfN_x films as a thin barrier for through-Si via interconnects in three-dimensional integration 2014 ·Japanese Journal of Applied Physics ·Mayumi B. Takeyama, Masaru Sato, Eiji Aoyagi, Atsushi Noya	7
6	Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at low temperatures 2014 ·Japanese Journal of Applied Physics ·Mayumi B. Takeyama, Masaru Sato, Yoshihiro Nakata, Yasushi Kobayashi, T. Nakamura, Atsushi Noya	18
7	Barrier Properties of Thin ZrN_x Films Prepared by Radical-Assisted Surface Reaction 2011 ·Japanese Journal of Applied Physics ·Masaru Sato, Mayumi B. Takeyama, (unknown), Eiji Aoyagi, Atsushi Noya	4
8	Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC 2008 ·Japanese Journal of Applied Physics ·Masaru Sato, Mayumi B. Takeyama, Eiji Aoyagi, Atsushi Noya	11
9	Formation of Preferentially Oriented Cu [111] Layer on Nb [110] Barrier on SiO₂ 2004 ·Japanese Journal of Applied Physics ·Md. Maniruzzaman, Mayumi B. Takeyama, Yuichiro Hayasaka, Eiji Aoyagi, Atsushi Noya	7
10	Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO_2 2002 ·Md. Maniruzzaman, Mayumi B. Takeyama, Atsushi Noya	0
11	Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP 1999 ·Japanese Journal of Applied Physics ·Mayumi B. Takeyama, Atsushi Noya, (unknown)	8
12	Oxidation Behavior of Ta Thin Films as a Passivation Layer Deposited on Cu 1996 ·Japanese Journal of Applied Physics ·(unknown), (unknown), Atsushi Noya	9
13	Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers on SiO₂ 1996 ·Japanese Journal of Applied Physics ·Mayumi B. Takeyama, Atsushi Noya, (unknown), (unknown)	19
14	Properties of TaNx films as diffusion barriers in the thermally stable Cu/Si contact systems 1996 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Mayumi B. Takeyama, Atsushi Noya, (unknown), Akira Ohta, Katsutaka Sasaki	103
15	Formation of metal-rich silicides in the initial stage of interfacial reactions in Nb/Si systems 1995 ·Journal of Applied Physics ·(unknown), Mayumi B. Takeyama, Atsushi Noya, Katsutaka Sasaki	24
16	The oxidation process and dissipation factor of Al/Ta/Hf multilayered anodized thin‐film capacitors 1994 ·Electronics and Communications in Japan (Part II Electronics) ·(unknown), (unknown), Katsutaka Sasaki, Atsushi Noya	1
17	Thermal Stability of W₂N Film as a Diffusion Barrier between Al and Si 1994 ·Japanese Journal of Applied Physics ·Atsushi Noya, Mayumi B. Takeyama, Katsutaka Sasaki, Eiji Aoyagi, (unknown)	5
18	Improvement of the Electrical Properties of Al/Hf bi-Layered Anodized Capacitor by Interposing a Ta Layer 1993 ·Transactions of the Institute of Electronics, Information and Communication Engineers ·(unknown), (unknown), Katsutaka Sasaki, Atsushi Noya	1
19	Preparation of the CuTi_2 Intermetallic Compound Film and Its Application to the Cu/CuTi_2/Si Contact Structure 1992 ·(unknown), Takahiro Sasaki, Katsutaka Sasaki, Atsushi Noya	1
20	Auger Electron Spectroscopy Study on the Stability of the Interface between Deposited Cu₉Al₄ Intermetallic Compound Film and Si 1991 ·Japanese Journal of Applied Physics ·Atsushi Noya, Katsutaka Sasaki, (unknown), N. Sasao	5

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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