JD Ganière

462 total citations
23 papers, 365 citations indexed

About

JD Ganière is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, JD Ganière has authored 23 papers receiving a total of 365 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Atomic and Molecular Physics, and Optics, 15 papers in Electrical and Electronic Engineering and 7 papers in Materials Chemistry. Recurrent topics in JD Ganière's work include Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and interfaces (6 papers) and Semiconductor materials and devices (5 papers). JD Ganière is often cited by papers focused on Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and interfaces (6 papers) and Semiconductor materials and devices (5 papers). JD Ganière collaborates with scholars based in Switzerland, Germany and Poland. JD Ganière's co-authors include B. Deveaud, F. K. Reinhart, Nguyen Hong Ky, D. Araújo, Ph. Buffat, Lorenzo Pavesi, F. K. Reinhart, M. Kutrowski, P. Kossacki and T. Wójtowicz and has published in prestigious journals such as The Journal of Chemical Physics, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

JD Ganière

23 papers receiving 357 citations

Peers

Countries citing papers authored by JD Ganière

Since Specialization

Citations

This map shows the geographic impact of JD Ganière's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by JD Ganière with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites JD Ganière more than expected).

Fields of papers citing papers by JD Ganière

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by JD Ganière. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by JD Ganière. The network helps show where JD Ganière may publish in the future.

Co-authorship network of co-authors of JD Ganière

This figure shows the co-authorship network connecting the top 25 collaborators of JD Ganière. A scholar is included among the top collaborators of JD Ganière based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with JD Ganière. JD Ganière is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Transverse and longitudinal space-charge-induced broadenings of ultrafast electron packets 2005 ·Journal of Applied Physics ·Stéphane Collin, Michele Merano, (unknown), S. Sonderegger, P. Renucci, JD Ganière, B. Deveaud	28
2	Tunnelling of spin-polarized holes in asymmetric double quantum well structures 2004 ·Semiconductor Science and Technology ·(unknown), M. Nawrocki, JD Ganière, B. Deveaud, E. Janik	2
3	Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm 2002 ·Applied Physics Letters ·A. Markus, Andrea Fiore, JD Ganière, U. Oesterlé, Jiangxi Chen, B. Deveaud, M. Ilegems, H. Riechert	40
4	Radiative behavior of negatively charged excitons in CdTe-based quantum wells: A spectral and temporal analysis 2000 ·Physical review. B, Condensed matter ·(unknown), P. Kossacki, Stefan Haacke, JD Ganière, B. Deveaud, A. Esser, M. Kutrowski, T. Wójtowicz	64
5	Effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multiple-quantum-well structures 1999 ·Journal of Applied Physics ·Nguyen Hong Ky, F. K. Reinhart, JD Ganière, B. Deveaud, B. Blanchard	6
6	Picosecond studies of the intramolecular relaxation processes in isolated C60 and C70 molecules 1999 ·The Journal of Chemical Physics ·A. Sassara, G. Zerza, Majed Chergui, (unknown), JD Ganière, B. Deveaud	19
7	ZnSe Growth on Lattice-Matched In_xGa_1-xAs Substrates 1998 ·Surface Review and Letters ·Stefan Heun, (unknown), J. J. Paggel, Lucia Sorba, S. Rubini, B. Bonanni, A. Franciosi, M. Lomascolo, R. Cingolani, J.-M. Bonard, JD Ganière	3
8	Comparison of the lateral carrier transport between a GaAs single quantum well and the AlGaAs barrier during cathodoluminescence excitation 1994 ·Journal of Applied Physics ·D. Araújo, G. Oelgart, JD Ganière, F. K. Reinhart	10
9	High-reflectance GaInP/GaAs distributed Bragg reflector 1993 ·Electronics Letters ·(unknown), A. Rudra, JD Ganière, M. Ilegems	4
10	Effects of post-diffusion annealing on Zn-diffused GaAs:Si 1993 ·Journal of Applied Physics ·Nguyen Hong Ky, JD Ganière, F. K. Reinhart, B. Blanchard, J. C. Pfister	7
11	Investigation of InGaAs/InP interdiffusion by simultaneous transmission electron microscopy and photoluminescence analysis 1993 ·Materials Science and Engineering B ·J. Oshinowo, A. Forchel, JD Ganière, P. Ruterana, PA Stadelmann, (unknown), G. Laube, E. Zielinski	4
12	Reactions of Gallium Vacancies during Annealing and Zn Diffusion in GaAs: Si 1993 ·Materials science forum ·Nguyen Hong Ky, JD Ganière, F. K. Reinhart, B. Blanchard	1
13	A model for the Zn diffusion in GaAs by a photoluminescence study 1991 ·Journal of Applied Physics ·Nguyen Hong Ky, Lorenzo Pavesi, D. Araújo, JD Ganière, F. K. Reinhart	45
14	Low threshold 1.5 μm SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growths 1991 ·Journal of Crystal Growth ·A. Ougazzaden, JD Ganière, (unknown), E. V. K. Rao, B. Sermage, C. Kazmierski, A. Mircéa	1
15	Characterization by transmission electron microscopy of wedge shaped semiconductor samples 1989 ·Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·JD Ganière, F. K. Reinhart, (unknown), A. Catana, P. Ruterana, PA Stadelmann, (unknown)	3
16	Characterization of GaAs/(GaAs)n(AlAs)m surface-emitting laser structures through reflectivity and high-resolution electron microscopy measurements 1989 ·Journal of Applied Physics ·(unknown), JD Ganière, Ph. Buffat, (unknown), F. K. Reinhart	48
17	Transmission and reflection electron microscopy on cleaved edges of III-V multilayered structures in evaluation of Advanced Semiconductor Materials by Electron Microscopy 1988 ·Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·(unknown), JD Ganière, PA Stadelmann	1
18	High resolution observation and image simulation on cleaved wedges of III-V semiconductor 1988 ·Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·P. A. Buffat, JD Ganière, PA Stadelmann	2
19	Natural and etched surfaces in para- and ferroelectric KTa1- xNbx O3: A study by scanning electron microscopy and x-ray topography 1986 ·Journal of Crystal Growth ·Ph. Buffat, JD Ganière, M. Rappaz, Daniel Rytz	19
20	Calculation of homogeneous nucleation for a source of clusters with thermalizing carrier gas 1981 ·Surface Science ·(unknown), JD Ganière	5

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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