C.M. Fortmann

1.1k total citations
113 papers, 868 citations indexed

About

C.M. Fortmann is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C.M. Fortmann has authored 113 papers receiving a total of 868 indexed citations (citations by other indexed papers that have themselves been cited), including 105 papers in Electrical and Electronic Engineering, 80 papers in Materials Chemistry and 21 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C.M. Fortmann's work include Thin-Film Transistor Technologies (94 papers), Silicon Nanostructures and Photoluminescence (73 papers) and Silicon and Solar Cell Technologies (68 papers). C.M. Fortmann is often cited by papers focused on Thin-Film Transistor Technologies (94 papers), Silicon Nanostructures and Photoluminescence (73 papers) and Silicon and Solar Cell Technologies (68 papers). C.M. Fortmann collaborates with scholars based in United States, Japan and Switzerland. C.M. Fortmann's co-authors include Isamu Shimizu, Toshio Kamiya, W. Futako, Kazuyuki NAKAHATA, Richard H. Bube, J. David Cohen, Thomas Unold, Alan L. Fahrenbruch, C. R. Wroński and W. Huber and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C.M. Fortmann

105 papers receiving 807 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.M. Fortmann United States 17 803 644 161 33 30 113 868
E. Iwaniczko United States 18 911 1.1× 632 1.0× 157 1.0× 77 2.3× 12 0.4× 81 950
J. A. Schmidt Argentina 16 503 0.6× 365 0.6× 129 0.8× 98 3.0× 48 1.6× 68 605
S. Aljishi United States 13 719 0.9× 584 0.9× 87 0.5× 32 1.0× 47 1.6× 52 765
J. Beichler Germany 8 721 0.9× 572 0.9× 111 0.7× 16 0.5× 60 2.0× 13 751
Mohammad M. Mandurah United States 7 687 0.9× 369 0.6× 201 1.2× 79 2.4× 8 0.3× 7 729
Y. Kishi Japan 9 354 0.4× 268 0.4× 47 0.3× 49 1.5× 18 0.6× 22 400
G. Agostinelli Belgium 11 621 0.8× 266 0.4× 197 1.2× 69 2.1× 14 0.5× 29 652
H.F.W. Dekkers Belgium 15 563 0.7× 272 0.4× 99 0.6× 66 2.0× 13 0.4× 31 601
M. Janai Israel 13 455 0.6× 310 0.5× 44 0.3× 39 1.2× 18 0.6× 31 517
R. Thompson United States 10 661 0.8× 359 0.6× 75 0.5× 72 2.2× 12 0.4× 34 678

Countries citing papers authored by C.M. Fortmann

Since Specialization
Citations

This map shows the geographic impact of C.M. Fortmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.M. Fortmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.M. Fortmann more than expected).

Fields of papers citing papers by C.M. Fortmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.M. Fortmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.M. Fortmann. The network helps show where C.M. Fortmann may publish in the future.

Co-authorship network of co-authors of C.M. Fortmann

This figure shows the co-authorship network connecting the top 25 collaborators of C.M. Fortmann. A scholar is included among the top collaborators of C.M. Fortmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.M. Fortmann. C.M. Fortmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Halada, Gary P., et al.. (2008). Phononic engineered materials and devices. Journal of Non-Crystalline Solids. 354(19-25). 2548–2551. 1 indexed citations
2.
Fortmann, C.M., A. H. Mahan, Scott Ward, et al.. (2003). Hot-wire photonics: materials, science, and technology. Thin Solid Films. 430(1-2). 278–282. 2 indexed citations
3.
4.
Fortmann, C.M., et al.. (2002). Progress in deposited refractive index engineered materials and devices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4459. 10–10. 2 indexed citations
5.
Güneş, M., Hongyue Liu, C.M. Fortmann, & C. R. Wroński. (2002). Direct correlations of bulk charged and neutral defect densities of states in a-Si:H films with characteristics of Schottky barrier solar cell structures. 1. 512–515. 1 indexed citations
6.
NAKAHATA, Kazuyuki, Toshio Kamiya, C.M. Fortmann, et al.. (2000). Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas. Journal of Non-Crystalline Solids. 266-269. 341–346. 5 indexed citations
7.
8.
Futako, W., Toshio Kamiya, C.M. Fortmann, & Isamu Shimizu. (1998). Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H. Journal of Non-Crystalline Solids. 227-230. 220–224. 5 indexed citations
9.
Futako, W., Takeshi Sugawara, Toshio Kamiya, C.M. Fortmann, & Isamu Shimizu. (1998). Wide Band Gap a-Si:H Based Ihgh Gain Vidicon Devices Prepared by Chemical Anniealing. MRS Proceedings. 507. 1 indexed citations
10.
11.
Fortmann, C.M.. (1994). Atomic vibration mediated electronic transport in amorphous silicon. Applied Physics Letters. 64(22). 3024–3026. 2 indexed citations
12.
Unold, Thomas, J. David Cohen, & C.M. Fortmann. (1992). Effect of Light-Soaking on the Density of States and Carrier Dynamics of a-Si1-xGex:H Alloys. MRS Proceedings. 258. 2 indexed citations
13.
Nighan, W. L., et al.. (1992). Free Carrier Lifetime in a-Si,Ge:H Alloys. MRS Proceedings. 258. 1 indexed citations
14.
Fortmann, C.M., Robin M. A. Dawson, & C. R. Wroński. (1991). Charge-Defect Equilibrium Description of the Staebler-Wronski Defect Concentration and Formation Energy. MRS Proceedings. 219. 2 indexed citations
15.
Nelson, A. J., A. Mason, A. B. Swartzlander, et al.. (1990). Auger line shape and electron energy loss spectroscopy analysis of amorphous, microcrystalline, and β‐SiC. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 8(3). 1538–1543. 6 indexed citations
16.
Fortmann, C.M., et al.. (1989). Stable high efficiency amorphous silicon based solar cells.. 56–59. 1 indexed citations
17.
Fortmann, C.M.. (1988). The Role of Structural Inhomogeneities on the Transport Properties of a-SiGe:H. MRS Proceedings. 118. 5 indexed citations
18.
Catalano, A., et al.. (1987). High performance, graded bandgap a-Si:H solar cells. Photovoltaic Specialists Conference. 1506. 4 indexed citations
19.
Anthony, Thomas, C.M. Fortmann, W. Huber, Richard H. Bube, & A. L. Fahrenbruch. (1984). CdS/CdTe solar cells by Close-Spaced Vapor Transport and Hot-Wall Vacuum Deposition. Photovoltaic Specialists Conference. 827–834. 1 indexed citations
20.
Huber, W., Alan L. Fahrenbruch, C.M. Fortmann, & Richard H. Bube. (1983). Grain boundary phenomena in n-type CdTe films grown by hot wall vacuum evaporation. Journal of Applied Physics. 54(7). 4038–4043. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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