A. Shibatomi

841 total citations
46 papers, 643 citations indexed

About

A. Shibatomi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, A. Shibatomi has authored 46 papers receiving a total of 643 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 8 papers in Condensed Matter Physics. Recurrent topics in A. Shibatomi's work include Semiconductor Quantum Structures and Devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Semiconductor materials and devices (22 papers). A. Shibatomi is often cited by papers focused on Semiconductor Quantum Structures and Devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Semiconductor materials and devices (22 papers). A. Shibatomi collaborates with scholars based in Japan. A. Shibatomi's co-authors include Naoki Yokoyama, Shunichi Muto, H. Ohnìshì, Hidetoshi Onodera, Tsuguo Inata, T. Ohnishi, N. Yokoyama, Masayuki Abe, Kuninori Kitahara and Masaaki Kobayashi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

A. Shibatomi

45 papers receiving 608 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Shibatomi Japan 15 549 472 69 53 47 46 643
P G Eliseev Russia 14 650 1.2× 565 1.2× 52 0.8× 35 0.7× 40 0.9× 81 730
B. Pezeshki United States 16 788 1.4× 467 1.0× 45 0.7× 46 0.9× 47 1.0× 82 857
L.D. Westbrook United Kingdom 20 1.1k 2.0× 671 1.4× 32 0.5× 41 0.8× 36 0.8× 59 1.2k
J.S. Roberts United Kingdom 14 467 0.9× 444 0.9× 63 0.9× 53 1.0× 69 1.5× 49 597
T. Sugeta Japan 14 670 1.2× 463 1.0× 78 1.1× 72 1.4× 37 0.8× 51 723
Kunihiro Arai Japan 15 594 1.1× 603 1.3× 164 2.4× 56 1.1× 102 2.2× 47 785
J. Walker United States 11 543 1.0× 354 0.8× 26 0.4× 68 1.3× 93 2.0× 31 654
P. Kelkar United States 12 341 0.6× 402 0.9× 39 0.6× 66 1.2× 64 1.4× 28 496
W. Susaki Japan 16 758 1.4× 549 1.2× 78 1.1× 37 0.7× 39 0.8× 100 803
T. Brock United States 15 505 0.9× 342 0.7× 70 1.0× 56 1.1× 41 0.9× 48 553

Countries citing papers authored by A. Shibatomi

Since Specialization
Citations

This map shows the geographic impact of A. Shibatomi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Shibatomi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Shibatomi more than expected).

Fields of papers citing papers by A. Shibatomi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Shibatomi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Shibatomi. The network helps show where A. Shibatomi may publish in the future.

Co-authorship network of co-authors of A. Shibatomi

This figure shows the co-authorship network connecting the top 25 collaborators of A. Shibatomi. A scholar is included among the top collaborators of A. Shibatomi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Shibatomi. A. Shibatomi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Amaha, S., T. Hatano, S. Teraoka, et al.. (2008). Laterally coupled self-assembled InAs quantum dots embedded in resonant tunnel diode with multigate electrodes. Applied Physics Letters. 92(20). 30 indexed citations
2.
Ohnìshì, H., Naoki Yokoyama, & A. Shibatomi. (1989). Transient analysis of resonant tunneling hot electron transistor (RHET). Solid-State Electronics. 32(12). 1905–1909. 4 indexed citations
3.
Futatsugi, T., Yasuhiro Yamaguchi, Shunichi Muto, Naoki Yokoyama, & A. Shibatomi. (1989). Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures. Journal of Applied Physics. 65(4). 1771–1775. 13 indexed citations
4.
5.
Shibatomi, A., Yasuhiro Yamaguchi, T. Futatsugi, Shunichi Muto, & Naoki Yokoyama. (1987). Fabrication Process Of Resonant Tunneling Bipolar Transistor (RBT). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 797. 348–348. 1 indexed citations
6.
Ohnìshì, H., Tsuguo Inata, Shunichi Muto, Naoki Yokoyama, & A. Shibatomi. (1986). Self-consistent analysis of resonant tunneling current. Applied Physics Letters. 49(19). 1248–1250. 129 indexed citations
7.
Futatsugi, T., Yoshinori Yamaguchi, K. Imamura, et al.. (1986). A resonant-tunneling bipolar transistor (RBT): A proposal and demonstration for new functional devices with high current gains. 286–289. 13 indexed citations
8.
Mimura, T., Masayuki Abe, A. Shibatomi, & Masaaki Kobayashi. (1986). HEMT technology: Potential and advances. Surface Science. 174(1-3). 343–351. 8 indexed citations
9.
Imamura, K., Shunichi Muto, Takuro Fujii, et al.. (1986). InGaAs/InAlGaAs hot-electron transistors with current gain of 15. Electronics Letters. 22(21). 1148–1149. 16 indexed citations
10.
Saito, J. & A. Shibatomi. (1985). Highly uniform GaAs and AlGaAs epitaxial layers grown by molecular beam epitaxy. 21(2). 190–197. 4 indexed citations
11.
Kobayashi, Naoki, et al.. (1985). A Fully Operational 1Kb HEMT Static RAM. 207–210. 3 indexed citations
12.
Onodera, Hidetoshi, Hiroki Kawata, Naoki Yokoyama, H. Nishi, & A. Shibatomi. (1984). A high-transconductance self-aligned GaAs MESFET fabricated by through-AIN implantation. IEEE Transactions on Electron Devices. 31(12). 1808–1813. 6 indexed citations
13.
Yokoyama, Naoki, et al.. (1984). A 3ns GaAs 4K × 1b SRAM. 44–45. 1 indexed citations
14.
Onodera, Hidetoshi, Naoki Yokoyama, Hiroki Kawata, H. Nishi, & A. Shibatomi. (1984). High-transconductance self aligned GaAs MESFET using implantation through an AlN layer. Electronics Letters. 20(1). 45–47. 9 indexed citations
15.
Ohnishi, T., et al.. (1983). Characterization of WSix/GaAs Schottky contacts. Applied Physics Letters. 43(6). 600–602. 62 indexed citations
16.
Ohnishi, T., et al.. (1983). A GaAs 1K static RAM using tungsten-silicide gate self alignment technology. 44–45. 9 indexed citations
17.
Abe, Masayuki, et al.. (1983). HEMT LSI Technology for High Speed Computers. 158–161. 8 indexed citations
18.
Ozeki, Masashi, K. Kodama, M. Takikawa, & A. Shibatomi. (1982). Analysis of electrical and optical properties of insulating film–GaAs interfaces using MESFET-type structures. Journal of Vacuum Science and Technology. 21(2). 438–441. 26 indexed citations
19.
Komeno, J., et al.. (1981). A new method for controlling doping profiles of GaAs VPE layers. Journal of Crystal Growth. 52. 250–256. 1 indexed citations
20.
Kitahara, Kuninori, et al.. (1978). Current-voltage characteristics and deep levels in chromium-doped semi-insulating GaAs. Applied Physics Letters. 32(4). 259–260. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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