T. Mimura

2.7k citations

118 papers · 2.0k indexed · h-index 24

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena

Papers in ⓘ

Electrical and Electronic Engineering 83
- Semiconductor materials and devices 63
- Advancements in Semiconductor Devices and Circuit Design 42
- Radio Frequency Integrated Circuit Design 28
Atomic and Molecular Physics, and Optics 51
- Semiconductor Quantum Structures and Devices 42
- Quantum and electron transport phenomena 6

Co-authors: Toshiaki Matsui (32 shared papers)S. Hiyamizu (24 shared papers)Masayuki Abe (32 shared papers)Masataka Higashiwaki (11 shared papers)K. Hikosaka (20 shared papers)Y. Yamashita (23 shared papers)Akira Endoh (23 shared papers)K. Shinohara (18 shared papers)
Journals: IEEE Electron Device Letters (15 papers)IEEE Transactions on Electron Devices (14 papers)Electronics Letters (5 papers)IEEE Journal of Solid-State Circuits (5 papers)IEEE Transactions on Microwave Theory and Techniques (3 papers)
Partner nations: Japan United States South Korea

In The Last Decade

T. Mimura

112 papers receiving 1.9k citations

Peers

Countries citing papers authored by T. Mimura

Since Specialization

Citations

This map shows the geographic impact of T. Mimura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Mimura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Mimura more than expected).

Fields of papers citing papers by T. Mimura

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Mimura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Mimura. The network helps show where T. Mimura may publish in the future.

Co-authors

The 25 scholars most cited alongside T. Mimura, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Mimura Line = papers co-authored together T. Mimura links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 118 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz IEEE Electron Device Letters ·Y. Yamashita, Akira Endoh, K. Shinohara, K. Hikosaka, Toshiaki Matsui, S. Hiyamizu, T. Mimura	2002	224
2	Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment IEEE Transactions on Electron Devices ·Yuji Awano, M. Kosugi, K. Kosemura, T. Mimura, Masayuki Abe	1989	132
3	AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN IEEE Electron Device Letters ·Masataka Higashiwaki, T. Mimura, Toshiaki Matsui	2006	95
4	547-GHz<tex>$f_t$</tex>In<tex>$_0.7$</tex>Ga<tex>$_0.3$</tex>As–In<tex>$_0.52$</tex>Al<tex>$_0.48$</tex>As HEMTs With Reduced Source and Drain Resistance IEEE Electron Device Letters ·K. Shinohara, Y. Yamashita, Akira Endoh, Iwao Watanabe, K. Hikosaka, Toshiaki Matsui, T. Mimura, S. Hiyamizu	2004	95
5	AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers IEEE Electron Device Letters ·Masataka Higashiwaki, Toshiaki Matsui, T. Mimura	2005	88
6	The early history of the high electron mobility transistor (HEMT) IEEE Transactions on Microwave Theory and Techniques ·T. Mimura	2002	80
7	Papillary microcarcinoma of the thyroid Journal of Endocrinological Investigation ·Kiminori Sugino, Kunihiko Ito, Osamu Ozaki, T. Mimura, Hiroyuki Iwasaki	1998	63
8	Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation Journal of Applied Physics ·Norio Onojima, Masataka Higashiwaki, Jun Suda, Tsunenobu Kimoto, T. Mimura, Toshiaki Matsui	2007	63
9	Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency IEEE Electron Device Letters ·K. Shinohara, Y. Yamashita, Akira Endoh, K. Hikosaka, Toshiaki Matsui, T. Mimura, S. Hiyamizu	2001	59
10	Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency IEEE Electron Device Letters ·Y. Yamashita, Akira Endoh, K. Shinohara, Masataka Higashiwaki, K. Hikosaka, T. Mimura, S. Hiyamizu, Toshiaki Matsui	2001	59
11	High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interface Applied Physics Letters ·S. Hiyamizu, T. Mimura, Toshio Fujii, K. Nanb	1980	55
12	Performance of a quarter-micrometer-gate ballistic electron HEMT IEEE Electron Device Letters ·Yuji Awano, M. Kosugi, T. Mimura, Masayuki Abe	1987	41
13	Low-temperature plasma oxidation of GaAs Applied Physics Letters ·N. Yokoyama, T. Mimura, K. Odani, M. Fukuta	1978	39
14	GaAs microwave MOSFET's IEEE Transactions on Electron Devices ·T. Mimura, K. Odani, Naoki Yokoyama, Y. Nakayama, M. Fukuta	1978	37
15	High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devices Journal of Crystal Growth ·S. Hiyamizu, T. Mimura	1982	36
16	Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integration N. Harada, S. Kuroda, T. Katakami, K. Hikosaka, T. Mimura, Masayuki Abe	2002	35
17	A self-aligned source/drain planar device for ultrahigh-speed GaAs MESFET VLSIs Naoki Yokoyama, T. Mimura, M. Fukuta, Hideaki Ishikawa	1981	34
18	New technology towards GaAs LSI/VLSI for computer applications IEEE Transactions on Electron Devices ·Masayuki Abe, T. Mimura, Naoki Yokoyama, Hideaki Ishikawa	1982	33
19	A 40-ps high electron mobility transistor 4.1 K gate array IEEE Journal of Solid-State Circuits ·Kiyoshi Kajii, Y. Watanabe, M. Suzuki, Isamu Hanyu, M. Kosugi, K. Odani, T. Mimura, Masayuki Abe	1988	30
20	4-GHz 15-W power GaAs MESFET IEEE Transactions on Electron Devices ·M. Fukuta, T. Mimura, Hitoshi Suzuki, K. Suyama	1978	26

About T. Mimura

T. Mimura is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Radiology, Nuclear Medicine and Imaging and Biomedical Engineering, having authored 118 papers that have together received 2.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (63 papers), Semiconductor Quantum Structures and Devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Radio Frequency Integrated Circuit Design (28 papers), GaN-based semiconductor devices and materials (22 papers), Optical Imaging and Spectroscopy Techniques (11 papers), Photoacoustic and Ultrasonic Imaging (9 papers) and Quantum and electron transport phenomena (6 papers). The work is most often cited by research in Condensed Matter Physics (574 citations), Atomic and Molecular Physics, and Optics (946 citations), Electrical and Electronic Engineering (1.6k citations), Electronic, Optical and Magnetic Materials (253 citations) and Materials Chemistry (229 citations). T. Mimura has collaborated with scholars based in Japan, United States and South Korea. Frequent co-authors include Toshiaki Matsui, S. Hiyamizu, Masayuki Abe, Masataka Higashiwaki, K. Hikosaka, Y. Yamashita, Akira Endoh, K. Shinohara, M. Fukuta and M. Kosugi. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Electronics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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