T. Sugeta

919 total citations
51 papers, 723 citations indexed

About

T. Sugeta is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computer Networks and Communications. According to data from OpenAlex, T. Sugeta has authored 51 papers receiving a total of 723 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 4 papers in Computer Networks and Communications. Recurrent topics in T. Sugeta's work include Semiconductor Quantum Structures and Devices (30 papers), Radio Frequency Integrated Circuit Design (21 papers) and Semiconductor Lasers and Optical Devices (14 papers). T. Sugeta is often cited by papers focused on Semiconductor Quantum Structures and Devices (30 papers), Radio Frequency Integrated Circuit Design (21 papers) and Semiconductor Lasers and Optical Devices (14 papers). T. Sugeta collaborates with scholars based in Japan, United States and United Kingdom. T. Sugeta's co-authors include Hiroshi Itô, Tadao Ishibashi, Yoshihiko Mizushima, O. Nakajima, Koichi Nagata, K. Ohwada, T. Urisu, H. Yanai, Tsuneo Urisu and M. Muraguchi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

T. Sugeta

46 papers receiving 680 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Sugeta Japan 14 670 463 78 72 37 51 723
S. P. Klepner United States 10 443 0.7× 210 0.5× 129 1.7× 70 1.0× 49 1.3× 19 570
M. Matloubian United States 16 764 1.1× 429 0.9× 112 1.4× 91 1.3× 41 1.1× 69 809
A. Oosenbrug Switzerland 9 253 0.4× 218 0.5× 136 1.7× 28 0.4× 22 0.6× 18 345
R.W.H. Engelmann United States 13 446 0.7× 395 0.9× 34 0.4× 30 0.4× 24 0.6× 39 506
A. Shibatomi Japan 15 549 0.8× 472 1.0× 69 0.9× 53 0.7× 47 1.3× 46 643
S. Bandy United States 13 490 0.7× 322 0.7× 51 0.7× 82 1.1× 24 0.6× 53 530
N.H. Sheng United States 16 787 1.2× 434 0.9× 129 1.7× 78 1.1× 35 0.9× 52 818
H. Fukui United States 10 873 1.3× 352 0.8× 141 1.8× 81 1.1× 36 1.0× 19 897
Y. Ayasli United States 16 906 1.4× 289 0.6× 175 2.2× 83 1.2× 16 0.4× 33 950
F.M. Klaassen Netherlands 17 965 1.4× 141 0.3× 19 0.2× 132 1.8× 63 1.7× 51 1.0k

Countries citing papers authored by T. Sugeta

Since Specialization
Citations

This map shows the geographic impact of T. Sugeta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Sugeta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Sugeta more than expected).

Fields of papers citing papers by T. Sugeta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Sugeta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Sugeta. The network helps show where T. Sugeta may publish in the future.

Co-authorship network of co-authors of T. Sugeta

This figure shows the co-authorship network connecting the top 25 collaborators of T. Sugeta. A scholar is included among the top collaborators of T. Sugeta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Sugeta. T. Sugeta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nagashima, Hiroshi, et al.. (2011). Prevention of Transformer Saturation at a Black Start by Resistor Insertion of 500kV CB. IEEJ Transactions on Power and Energy. 131(1). 72–77.
2.
Sugeta, T., et al.. (2009). CWDM-Based Switching Network Design for High Vision Real-Time Transmission. 721–725. 1 indexed citations
3.
Aikawa, M., Hideaki Ogawa, & T. Sugeta. (2003). MMIC progress in Japan. c 681. 1–6. 2 indexed citations
4.
Sugeta, T., T. Mizutani, M. Ino, & S. Horiguchi. (1986). High Speed Technology Comparison -GaAs VS Si-. 3–6. 3 indexed citations
5.
Nakajima, O., Koichi Nagata, Hiroshi Itô, Tadao Ishibashi, & T. Sugeta. (1985). Suppression of Emitter Size Effect on Current Gain in AlGaAs/GaAs HBTs. Japanese Journal of Applied Physics. 24(10R). 1368–1368. 55 indexed citations
6.
Itô, Hiroshi, et al.. (1984). High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors. IEEE Electron Device Letters. 5(6). 214–216. 51 indexed citations
7.
Itô, Hiroshi, Tadao Ishibashi, & T. Sugeta. (1984). High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Heavily Doped Base. 2 indexed citations
8.
Hirano, Makoto, Yoshifumi Takanashi, & T. Sugeta. (1984). Current—voltage characteristics of an AlGaAs/GaAs heterostructure FET for high gate voltages. IEEE Electron Device Letters. 5(11). 496–499. 5 indexed citations
9.
Tomizawa, M., et al.. (1984). Improvement in GaAs MESFET drain conductance by a steplike-gate structure. IEEE Transactions on Electron Devices. 31(4). 435–439.
10.
Imai, Yasuhiko, et al.. (1983). Ultra-broad-band GaAs monolithic direct-coupled feedback amplifiers. IEEE Electron Device Letters. 4(9). 323–325. 5 indexed citations
11.
Amemiya, Yoshiyuki, T. Sugeta, & Y. Mizushima. (1982). Novel low-loss and high-speed diode utilizing an "Ideal" ohmic contact. IEEE Transactions on Electron Devices. 29(2). 236–243. 16 indexed citations
12.
Amemiya, Yoshiyuki, T. Sugeta, & Y. Mizushima. (1981). VIA-6 novel low-loss and high speed diode utilizing an "IDEAL" ohmic contact. IEEE Transactions on Electron Devices. 28(10). 1256–1257. 15 indexed citations
13.
Urisu, Tsuneo, et al.. (1981). Stabilized injection locking light amplification of a 1.15-μm He-Ne laser. Journal of Applied Physics. 52(5). 3154–3158. 3 indexed citations
14.
Sugeta, T., et al.. (1980). Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits : B-4: OPTOELECTRONIC DEVICES. Japanese Journal of Applied Physics. 19(1). 459–464. 1 indexed citations
15.
Urisu, Tsuneo, T. Sugeta, & Yoshihiko Mizushima. (1980). Effects of dc electric fields on a dye laser amplifier. Journal of Applied Physics. 51(2). 904–907.
16.
Sugeta, T. & T. Urisu. (1979). WP-B2 high-gain metal—Semiconductor—Metal photodetectors for high-speed optoelectronic circuits. IEEE Transactions on Electron Devices. 26(11). 1855–1856. 39 indexed citations
17.
Sugeta, T., M. Ida, & Masaki Uchida. (1975). Microwave performance of GaAs-Schottky barrier gate FETs. Electronics and Communications in Japan. 23. 1182–1192. 1 indexed citations
18.
Tanimoto, M., H. Yanai, & T. Sugeta. (1974). Thermally induced FM noise in Gunn oscillators and jitter in Gunn-effect digital devices. IEEE Transactions on Electron Devices. 21(4). 258–265. 2 indexed citations
19.
Sugeta, T., M. Tanimoto, T. Ikoma, & H. Yanai. (1974). Characteristics and applications of a Schottky-barrier-gate Gunn-effect digital-device. IEEE Transactions on Electron Devices. 21(8). 504–515. 28 indexed citations
20.
Sugeta, T., H. Yanai, & T. Ikoma. (1970). Switching properties of bulk-effect digital devices. IEEE Transactions on Electron Devices. 17(10). 940–942. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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