A. P. Perley

450 total citations
17 papers, 370 citations indexed

About

A. P. Perley is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, A. P. Perley has authored 17 papers receiving a total of 370 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in A. P. Perley's work include Semiconductor materials and devices (14 papers), Semiconductor Quantum Structures and Devices (6 papers) and Plasma Diagnostics and Applications (6 papers). A. P. Perley is often cited by papers focused on Semiconductor materials and devices (14 papers), Semiconductor Quantum Structures and Devices (6 papers) and Plasma Diagnostics and Applications (6 papers). A. P. Perley collaborates with scholars based in United States. A. P. Perley's co-authors include S. J. Pearton, U. K. Chakrabarti, R. F. Kopf, G. Livescu, W. S. Hobson, Milton Ohring, M. Lamont Schnoes, A. Katz, K. S. Jones and H. P. Wei and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. P. Perley

17 papers receiving 358 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. P. Perley United States 11 266 239 65 48 39 17 370
R. E. Mallard Canada 12 438 1.6× 390 1.6× 122 1.9× 86 1.8× 44 1.1× 38 524
H. Kräutle Germany 11 358 1.3× 287 1.2× 53 0.8× 28 0.6× 15 0.4× 34 409
S. N. G. Chu United States 11 331 1.2× 368 1.5× 89 1.4× 47 1.0× 28 0.7× 26 434
L.J. Sargent United States 9 257 1.0× 202 0.8× 33 0.5× 31 0.6× 43 1.1× 24 329
J.V. Thordson Sweden 11 203 0.8× 277 1.2× 60 0.9× 153 3.2× 31 0.8× 32 352
Kimihiro Ohta Poland 9 259 1.0× 328 1.4× 108 1.7× 86 1.8× 59 1.5× 22 428
S. Shastry United States 12 238 0.9× 292 1.2× 71 1.1× 65 1.4× 64 1.6× 45 452
Bob Wilson 2 455 1.7× 455 1.9× 109 1.7× 76 1.6× 38 1.0× 4 570
Ya. E. Pokrovskiı̆ Russia 6 159 0.6× 276 1.2× 126 1.9× 28 0.6× 23 0.6× 26 335
J.-Y. Emery France 16 674 2.5× 513 2.1× 122 1.9× 43 0.9× 47 1.2× 52 796

Countries citing papers authored by A. P. Perley

Since Specialization
Citations

This map shows the geographic impact of A. P. Perley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. P. Perley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. P. Perley more than expected).

Fields of papers citing papers by A. P. Perley

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. P. Perley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. P. Perley. The network helps show where A. P. Perley may publish in the future.

Co-authorship network of co-authors of A. P. Perley

This figure shows the co-authorship network connecting the top 25 collaborators of A. P. Perley. A scholar is included among the top collaborators of A. P. Perley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. P. Perley. A. P. Perley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Pearton, S. J., W. S. Hobson, C. R. Abernathy, et al.. (1993). Dry etching characteristics of III?V semiconductors in microwave BCl3 discharges. Plasma Chemistry and Plasma Processing. 13(2). 311–332. 28 indexed citations
2.
Kopf, R. F., H. P. Wei, A. P. Perley, & G. Livescu. (1992). Electron effective mass and band-gap dependence on alloy composition of AlyGaxIn1−y−xAs, lattice matched to InP. Applied Physics Letters. 60(19). 2386–2388. 35 indexed citations
3.
Kopf, R. F., et al.. (1992). Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs. Journal of Applied Physics. 71(10). 5004–5011. 114 indexed citations
4.
Pearton, S. J., U. K. Chakrabarti, E. Lane, et al.. (1992). Characteristics of III‐V Dry Etching In HBr ‐ Based Discharges. Journal of The Electrochemical Society. 139(3). 856–864. 25 indexed citations
5.
Pearton, S. J., U. K. Chakrabarti, W. S. Hobson, et al.. (1992). Hydrogen Iodide‐Based Dry Etching of GaAs , InP , and Related Compounds. Journal of The Electrochemical Society. 139(6). 1763–1772. 13 indexed citations
6.
Pearton, S. J., et al.. (1992). Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation. Journal of Applied Physics. 71(1). 215–220. 17 indexed citations
7.
Pearton, S. J., et al.. (1991). Use of CF3,Br/Al, discharges for reactive ion etching of III-V semiconductors. Plasma Chemistry and Plasma Processing. 11(2). 295–310. 3 indexed citations
8.
Pearton, S. J., U. K. Chakrabarti, A. P. Perley, C. Constantine, & D. Johnson. (1991). Degradation-free electron cyclotron resonance plasma etching of InP. Semiconductor Science and Technology. 6(9). 929–933. 7 indexed citations
9.
Pearton, S. J., J. M. Kuo, F. Ren, A. Katz, & A. P. Perley. (1991). Ion implantation doping and isolation of In0.5Ga0.5P. Applied Physics Letters. 59(12). 1467–1469. 13 indexed citations
10.
Pearton, S. J., J. M. Kuo, W. S. Hobson, et al.. (1991). Ion Implantation Doping of InGaP, InGaAs, and InAlAs. MRS Proceedings. 240. 3 indexed citations
11.
Pearton, S. J., U. K. Chakrabarti, A. Katz, et al.. (1991). Comparison of CH4/H2/Ar reactive ion etching and electron cyclotron resonance plasma etching of In-based III–V alloys. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(3). 1421–1432. 26 indexed citations
12.
Pearton, S. J., U. K. Chakrabarti, A. P. Perley, W. S. Hobson, & M. Geva. (1991). Dry Etching of GaAs , AlGaAs , and GaSb Using Electron Cyclotron Resonance and Radio Frequency  CH 4 /  H 2 / Ar or  C 2 H 6 /  H 2 / Ar Discharges. Journal of The Electrochemical Society. 138(5). 1432–1439. 10 indexed citations
13.
Pearton, S. J., U. K. Chakrabarti, A. Katz, et al.. (1991). Hybrid electron cyclotron resonance-radio-frequency plasma etching of III?V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds. Plasma Chemistry and Plasma Processing. 11(4). 405–422. 8 indexed citations
14.
Pearton, S. J., W. S. Hobson, U. K. Chakrabarti, A. Katz, & A. P. Perley. (1991). Hybrid electron cyclotron resonance-radio-frequency plasma etching of III?V semiconductors in Cl2-based discharges. Part II: InP and related compounds. Plasma Chemistry and Plasma Processing. 11(4). 423–438. 2 indexed citations
15.
Pearton, S. J., U. K. Chakrabarti, A. P. Perley, & K. S. Jones. (1990). Ion milling damage in InP and GaAs. Journal of Applied Physics. 68(6). 2760–2768. 44 indexed citations
16.
Pearton, S. J., U. K. Chakrabarti, & A. P. Perley. (1990). Ion Milling Damage in InP and GaAs. MRS Proceedings. 216. 1 indexed citations
17.
Pearton, S. J., U. K. Chakrabarti, W. S. Hobson, & A. P. Perley. (1990). Cl2 and SiCl4 Reactive Ion Etching of In‐Based III–V Semiconductors. Journal of The Electrochemical Society. 137(10). 3188–3202. 21 indexed citations

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