Ya. E. Pokrovskiı̆

422 total citations
26 papers, 335 citations indexed

About

Ya. E. Pokrovskiı̆ is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Ya. E. Pokrovskiı̆ has authored 26 papers receiving a total of 335 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Atomic and Molecular Physics, and Optics, 14 papers in Electrical and Electronic Engineering and 7 papers in Materials Chemistry. Recurrent topics in Ya. E. Pokrovskiı̆'s work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and interfaces (10 papers) and Silicon and Solar Cell Technologies (8 papers). Ya. E. Pokrovskiı̆ is often cited by papers focused on Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and interfaces (10 papers) and Silicon and Solar Cell Technologies (8 papers). Ya. E. Pokrovskiı̆ collaborates with scholars based in Russia, Canada and Germany. Ya. E. Pokrovskiı̆'s co-authors include G. A. Thomas, D. Labrie and M. L. W. Thewalt and has published in prestigious journals such as Physical review. B, Condensed matter, Solid State Communications and physica status solidi (b).

In The Last Decade

Ya. E. Pokrovskiı̆

22 papers receiving 304 citations

Peers

Ya. E. Pokrovskiı̆
Ahmet Elçi United States
Roland Zimmermann Germany
O. Hildebrand Germany
L. L. Abels United States
Peter Vogl Germany
V. V. Paranjape Canada
R. Schwabe Germany
S. N. G. Chu United States
D. Drakova Germany
A. M. Jean‐Louis France
Ahmet Elçi United States
Ya. E. Pokrovskiı̆
Citations per year, relative to Ya. E. Pokrovskiı̆ Ya. E. Pokrovskiı̆ (= 1×) peers Ahmet Elçi

Countries citing papers authored by Ya. E. Pokrovskiı̆

Since Specialization
Citations

This map shows the geographic impact of Ya. E. Pokrovskiı̆'s research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ya. E. Pokrovskiı̆ with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ya. E. Pokrovskiı̆ more than expected).

Fields of papers citing papers by Ya. E. Pokrovskiı̆

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ya. E. Pokrovskiı̆. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ya. E. Pokrovskiı̆. The network helps show where Ya. E. Pokrovskiı̆ may publish in the future.

Co-authorship network of co-authors of Ya. E. Pokrovskiı̆

This figure shows the co-authorship network connecting the top 25 collaborators of Ya. E. Pokrovskiı̆. A scholar is included among the top collaborators of Ya. E. Pokrovskiı̆ based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ya. E. Pokrovskiı̆. Ya. E. Pokrovskiı̆ is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pokrovskiı̆, Ya. E.. (2005). Spectroscopic Study of Ga-Doped Ge under Uniaxial Pressure. Semiconductors. 39(2). 182–182. 1 indexed citations
2.
Pokrovskiı̆, Ya. E., et al.. (2004). Resonance states of gallium impurity in uniaxially compressed germanium. Journal of Experimental and Theoretical Physics Letters. 80(5). 335–338. 1 indexed citations
3.
Pokrovskiı̆, Ya. E., et al.. (2004). Impurity pairs and excitation relaxation in doped silicon. Journal of Experimental and Theoretical Physics Letters. 79(12). 650–656. 1 indexed citations
4.
Pokrovskiı̆, Ya. E., et al.. (2003). Impurity pairs and relaxation of excitation in silicon doped with group III and V impurities. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 707–710. 1 indexed citations
5.
Pokrovskiı̆, Ya. E., et al.. (2002). Infrared absorption by pairs of group III and V impurities in silicon. Journal of Experimental and Theoretical Physics. 95(1). 83–86. 1 indexed citations
6.
Pokrovskiı̆, Ya. E., et al.. (1997). Long-lived excited impurity states in diamond-like semiconductors. Journal of Experimental and Theoretical Physics. 85(1). 121–129. 6 indexed citations
7.
Pokrovskiı̆, Ya. E., et al.. (1995). Longliving excited states of impurities in Si. Solid State Communications. 93(5). 405–408. 7 indexed citations
8.
Labrie, D., et al.. (1993). Observation of autodissociating excited states of excitonic molecules. Physical review. B, Condensed matter. 47(3). 1628–1631. 4 indexed citations
9.
Pokrovskiı̆, Ya. E., et al.. (1991). Slow relaxation of excited acceptor states in silicon. 54(2). 97–101.
10.
Pokrovskiı̆, Ya. E., et al.. (1990). Relaxation of extrinsic excitation in silicon with group III and V dopants. JETPL. 51. 377. 1 indexed citations
11.
Pokrovskiı̆, Ya. E., et al.. (1983). Multiparticle exciton-impurity complexes in semiconductors. Uspekhi Fizicheskih Nauk. 141(12). 713–713.
12.
Pokrovskiı̆, Ya. E., et al.. (1982). Luminescence analysis of group III and V impurities in silicon. Journal of Applied Spectroscopy. 36(5). 516–520. 12 indexed citations
13.
Pokrovskiı̆, Ya. E., et al.. (1980). Luminescence of excitons bound to phosphorus atoms in silicon subjected to a magnetic field. Journal of Experimental and Theoretical Physics. 52. 211. 1 indexed citations
14.
Thomas, G. A. & Ya. E. Pokrovskiı̆. (1978). Electron-hole liquid in germanium under infinite uniaxial compression. Physical review. B, Condensed matter. 18(2). 864–870. 10 indexed citations
15.
Pokrovskiı̆, Ya. E.. (1972). Condensation of non-equilibrium charge carriers in semiconductors. physica status solidi (a). 11(2). 385–410. 259 indexed citations
16.
Pokrovskiı̆, Ya. E., et al.. (1971). Condensation of Nonequilibrium Carriers in Silicon. JETP. 32. 1048. 2 indexed citations
17.
Pokrovskiı̆, Ya. E., et al.. (1971). Light Scattering by Drops of the Condensed Phase of Nonequilibrium Carriers in Germanium. 13. 212. 15 indexed citations
18.
Pokrovskiı̆, Ya. E., et al.. (1970). Recombination Radiation of the Condensed Phase of Nonequilibrium Carriers in Silicon. JETPL. 11. 255.
19.
Pokrovskiı̆, Ya. E., et al.. (1969). Occurrence of a Condensed Phase of Nonequilibrium Carriers in Germanium. ZhETF Pisma Redaktsiiu. 9. 261. 2 indexed citations
20.
Pokrovskiı̆, Ya. E., et al.. (1969). On the Problem of Electron Capture Coefficients of the Group III Acceptors in Silicon. physica status solidi (b). 33(2). 517–521. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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