A. M. Dhote

607 total citations
24 papers, 518 citations indexed

About

A. M. Dhote is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, A. M. Dhote has authored 24 papers receiving a total of 518 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Materials Chemistry, 13 papers in Electrical and Electronic Engineering and 12 papers in Biomedical Engineering. Recurrent topics in A. M. Dhote's work include Ferroelectric and Piezoelectric Materials (17 papers), Semiconductor materials and devices (12 papers) and Electronic and Structural Properties of Oxides (9 papers). A. M. Dhote is often cited by papers focused on Ferroelectric and Piezoelectric Materials (17 papers), Semiconductor materials and devices (12 papers) and Electronic and Structural Properties of Oxides (9 papers). A. M. Dhote collaborates with scholars based in United States, India and South Korea. A. M. Dhote's co-authors include S. Aggarwal, R. Ramesh, S. B. Ogale, R. D. Narhe, A. V. Limaye, S. Madhukar, R. Ramesh, A. Krishnan, D. J. Keeble and Edward H. Poindexter and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. M. Dhote

24 papers receiving 511 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. M. Dhote United States 12 401 186 173 132 83 24 518
C. T. Wu Taiwan 11 293 0.7× 141 0.8× 207 1.2× 120 0.9× 74 0.9× 18 468
R. Tomašiūnas Lithuania 13 453 1.1× 95 0.5× 337 1.9× 212 1.6× 109 1.3× 73 668
Bao‐Hsien Wu Taiwan 8 306 0.8× 148 0.8× 206 1.2× 117 0.9× 103 1.2× 12 510
Shinji Nozaki Japan 16 405 1.0× 102 0.5× 441 2.5× 71 0.5× 49 0.6× 60 715
Emi Kano Japan 13 240 0.6× 68 0.4× 197 1.1× 55 0.4× 93 1.1× 32 408
S. Kasiviswanathan India 14 394 1.0× 141 0.8× 339 2.0× 107 0.8× 38 0.5× 64 569
Román Caudillo United States 11 413 1.0× 208 1.1× 183 1.1× 86 0.7× 100 1.2× 20 586
S. D. Bernstein United States 12 333 0.8× 118 0.6× 255 1.5× 97 0.7× 66 0.8× 18 497
J.T. Lue Taiwan 14 205 0.5× 94 0.5× 190 1.1× 130 1.0× 46 0.6× 46 425
J. D’Arcy-Gall United States 11 365 0.9× 71 0.4× 166 1.0× 83 0.6× 18 0.2× 14 496

Countries citing papers authored by A. M. Dhote

Since Specialization
Citations

This map shows the geographic impact of A. M. Dhote's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. M. Dhote with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. M. Dhote more than expected).

Fields of papers citing papers by A. M. Dhote

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. M. Dhote. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. M. Dhote. The network helps show where A. M. Dhote may publish in the future.

Co-authorship network of co-authors of A. M. Dhote

This figure shows the co-authorship network connecting the top 25 collaborators of A. M. Dhote. A scholar is included among the top collaborators of A. M. Dhote based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. M. Dhote. A. M. Dhote is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dhote, A. M., Andreas Meier, D. J. Towner, et al.. (2005). Low temperature deposition of epitaxial BaTiO3 films in a rotating disk vertical MOCVD reactor. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(4). 1674–1678. 13 indexed citations
2.
Auciello, Orlando, A. M. Dhote, R. Ramesh, et al.. (2002). Development of Materials Integration Strategies for Electroceramic Film-Based Devices Via Complementary In Situ and Ex Situ Studies of Film Growth and Interface Processes. Integrated ferroelectrics. 46(1). 295–306. 1 indexed citations
3.
Maki, Kazunari, S. Aggarwal, B. Nagaraj, et al.. (2002). Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer. Applied Physics Letters. 80(19). 3599–3601. 31 indexed citations
4.
Dhote, A. M., Orlando Auciello, D. M. Gruen, & R. Ramesh. (2001). Studies of thin film growth and oxidation processes for conductive Ti–Al diffusion barrier layers via in situ surface sensitive analytical techniques. Applied Physics Letters. 79(6). 800–802. 15 indexed citations
5.
Aggarwal, S., B. Nagaraj, I. G. Jenkins, et al.. (2000). Correlation between oxidation resistance and crystallinity of Ti–Al as a barrier layer for high-density memories. Acta Materialia. 48(13). 3387–3394. 22 indexed citations
6.
Krauss, A.R., et al.. (1999). Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors. Integrated ferroelectrics. 27(1-4). 147–157. 2 indexed citations
7.
Aggarwal, S., et al.. (1999). Conducting barriers for vertical integration of ferroelectric capacitors on Si. Applied Physics Letters. 74(2). 230–232. 15 indexed citations
8.
Madhukar, S., S. Aggarwal, A. M. Dhote, et al.. (1999). Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology. Journal of materials research/Pratt's guide to venture capital sources. 14(3). 940–947. 10 indexed citations
9.
Krauss, A.R., A. M. Dhote, D. M. Gruen, et al.. (1998). Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions. Applied Physics Letters. 72(20). 2529–2531. 6 indexed citations
10.
Aggarwal, S., et al.. (1998). Lead based ferroelectric capacitors for low voltage non-volatile memory applications. Integrated ferroelectrics. 19(1-4). 159–177. 4 indexed citations
11.
Aggarwal, S., et al.. (1998). Influence of cationic stoichiometry of La1−xSrxCoO3 electrodes on the ferroelectric properties of lead based thin film memory elements. Journal of Applied Physics. 83(3). 1617–1624. 10 indexed citations
12.
Madhukar, S., S. Aggarwal, A. M. Dhote, et al.. (1997). Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes. Journal of Applied Physics. 81(8). 3543–3547. 94 indexed citations
13.
Li, Hua, Bo Yang, A. M. Dhote, et al.. (1997). Microstructure Investigations and Structure-Property Correlations in Ferroelectric thin film Capacitors. MRS Proceedings. 493. 1 indexed citations
14.
Yang, Bo, et al.. (1997). La 0.5 Sr 0.5 CoO 3 /Pb(Nb 0.04 Zr 0.28 Ti 0.68 )O 3 /La 0.5 Sr 0.5 CoO 3 thin film heterostructures on Si using TiN/Pt conducting barrier. Applied Physics Letters. 71(3). 356–358. 51 indexed citations
15.
Wei, Wenqi, A. M. Dhote, R. Ramesh, & S. Sauvage. (1996). Reliability studies of polycrystalline La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors on silicon. Integrated ferroelectrics. 12(1). 53–62. 2 indexed citations
16.
Aggarwal, S., A. M. Dhote, R. Ramesh, et al.. (1996). Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes. Applied Physics Letters. 69(17). 2540–2542. 46 indexed citations
17.
Dhote, A. M., R. Shreekala, S. I. Patil, et al.. (1995). Pulsed excimer laser etching of La0.75Ca0.25MnOx thin films. Applied Physics Letters. 67(24). 3644–3646. 10 indexed citations
18.
Dhote, A. M. & Satishchandra Ogale. (1994). Deposition of tungsten films by pulsed excimer laser ablation technique. Applied Physics Letters. 64(21). 2809–2811. 16 indexed citations
19.
Dhote, A. M., et al.. (1992). Metallization of glass/ceramic from solutions of organometallic compounds by laser induced pyrolysis. Journal of materials research/Pratt's guide to venture capital sources. 7(7). 1685–1689. 3 indexed citations
20.
Koinkar, Vilas N., R. D. Vispute, R. Viswanathan, et al.. (1990). Process conditions for deposition of good quality thin films of Y1Ba2Cu3O7− superconductor on ZrO2, SrTio3 and Si/ZrO2 substrates by XeC1 pulsed excimer laser ablation. Solid State Communications. 73(5). 345–348. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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