A. Lietoila

1.0k total citations
18 papers, 752 citations indexed

About

A. Lietoila is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Biomedical Engineering. According to data from OpenAlex, A. Lietoila has authored 18 papers receiving a total of 752 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 12 papers in Computational Mechanics and 5 papers in Biomedical Engineering. Recurrent topics in A. Lietoila's work include Silicon and Solar Cell Technologies (10 papers), Thin-Film Transistor Technologies (9 papers) and Laser Material Processing Techniques (9 papers). A. Lietoila is often cited by papers focused on Silicon and Solar Cell Technologies (10 papers), Thin-Film Transistor Technologies (9 papers) and Laser Material Processing Techniques (9 papers). A. Lietoila collaborates with scholars based in United States. A. Lietoila's co-authors include J. F. Gibbons, R. B. Gold, T. W. Sigmon, Y. I. Nissim, Jiahui Peng, T. J. Magee, J. D. Hong, Jesús A. del Alamo, R.M. Swanson and A. Gat and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solid-State Electronics.

In The Last Decade

A. Lietoila

18 papers receiving 658 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Lietoila United States	13	530	334	265	204	121	18	752
Y. I. Nissim France	13	453 0.9×	226 0.7×	199 0.8×	231 1.1×	81 0.7×	54	660
H. C. Webber United Kingdom	13	516 1.0×	468 1.4×	398 1.5×	109 0.5×	104 0.9×	25	871
R. B. Gold United States	10	394 0.7×	184 0.6×	115 0.4×	145 0.7×	71 0.6×	16	538
S. R. Stiffler United States	15	497 0.9×	202 0.6×	307 1.2×	79 0.4×	67 0.6×	26	715
K. Affolter Switzerland	12	228 0.4×	148 0.4×	128 0.5×	106 0.5×	126 1.0×	26	394
R. V. Knoell United States	11	492 0.9×	208 0.6×	155 0.6×	228 1.1×	53 0.4×	21	600
R.D. Greenough United Kingdom	15	174 0.3×	89 0.3×	255 1.0×	300 1.5×	158 1.3×	75	827
C. Nobili Italy	16	483 0.9×	119 0.4×	265 1.0×	309 1.5×	99 0.8×	38	737
A. H. Eltoukhy United States	12	284 0.5×	231 0.7×	258 1.0×	116 0.6×	187 1.5×	18	518
R. Hendel United States	11	344 0.6×	119 0.4×	72 0.3×	224 1.1×	45 0.4×	21	489

Countries citing papers authored by A. Lietoila

Since Specialization

Citations

This map shows the geographic impact of A. Lietoila's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Lietoila with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Lietoila more than expected).

Fields of papers citing papers by A. Lietoila

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Lietoila. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Lietoila. The network helps show where A. Lietoila may publish in the future.

Co-authorship network of co-authors of A. Lietoila

This figure shows the co-authorship network connecting the top 25 collaborators of A. Lietoila. A scholar is included among the top collaborators of A. Lietoila based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Lietoila. A. Lietoila is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Alamo, Jesús A. del, R.M. Swanson, & A. Lietoila. (1983). Photovoltaic measurement of bandgap narrowing in moderately doped silicon. Solid-State Electronics. 26(5). 483–489. 21 indexed citations

Lietoila, A. & J. F. Gibbons. (1982). Computer modeling of the temperature rise and carrier concentration induced in silicon by nanosecond laser pulses. Journal of Applied Physics. 53(4). 3207–3213. 56 indexed citations

Lietoila, A. & J. F. Gibbons. (1982). Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulses. Applied Physics Letters. 40(7). 624–626. 47 indexed citations

Lietoila, A., R. B. Gold, & J. F. Gibbons. (1982). Temperature rise induced in Si by continuous xenon arc lamp radiation. Journal of Applied Physics. 53(2). 1169–1172. 16 indexed citations

Lietoila, A., et al.. (1982). Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous Si. Journal of Applied Physics. 53(6). 4399–4405. 106 indexed citations

Lietoila, A. & J. F. Gibbons. (1981). Calculation of Carrier and Lattice Temperatures Induced in Si and GaAs By Picosecond Laser Pulses. MRS Proceedings. 4. 2 indexed citations

Gibbons, J. F., L. A. Christel, & A. Lietoila. (1981). Surface Temperatures Produced In Silicon Using Large Diameter Scanning Cw Sources. MRS Proceedings. 4. 2 indexed citations

Lietoila, A., R. B. Gold, & J. F. Gibbons. (1981). The rate of cw laser induced solid phase epitaxial regrowth of amorphous silicon. Applied Physics Letters. 39(10). 810–812. 19 indexed citations

Lietoila, A., et al.. (1981). Metastable As-concentrations in Si achieved by ion implantation and rapid thermal annealing. Journal of Applied Physics. 52(1). 230–232. 36 indexed citations

10.

Nissim, Y. I., A. Lietoila, R. B. Gold, & J. F. Gibbons. (1980). Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam. Journal of Applied Physics. 51(1). 274–279. 214 indexed citations

11.

Mizuta, M., N.H. Sheng, J. L. Merz, et al.. (1980). Electron-beam-induced current investigations of cw laser-annealed silicon. Applied Physics Letters. 37(2). 154–156. 15 indexed citations

12.

Lietoila, A., J. F. Gibbons, & T. W. Sigmon. (1980). The solid solubility and thermal behavior of metastable concentrations of As in Si. Applied Physics Letters. 36(9). 765–768. 108 indexed citations

13.

Lietoila, A. & J. F. Gibbons. (1979). The effect of free-carrier absorption on the annealing of ion-implanted silicon by pulsed lasers. Applied Physics Letters. 34(5). 332–334. 17 indexed citations

14.

Gibbons, J. F., A. Gat, L. Gerzberg, et al.. (1979). Annealing of ion-implanted Si using scanned laser and electron beams. AIP conference proceedings. 50. 365–380. 1 indexed citations

15.

Lietoila, A., J. F. Gibbons, T. J. Magee, Jiahui Peng, & J. D. Hong. (1979). Solid solubility of As in Si as determined by ion implantation and cw laser annealing. Applied Physics Letters. 35(7). 532–534. 72 indexed citations

16.

Gat, A., A. Lietoila, & J. F. Gibbons. (1979). A study of the mechanism of cw laser annealing of arsenic-implanted silicon. Journal of Applied Physics. 50(4). 2926–2929. 14 indexed citations

17.

Gibbons, J. F., J.L. Regolini, A. Lietoila, et al.. (1979). Amorphous-crystalline transition of arsenic-implanted silicon caused by multiple-pulsed ruby laser. Journal of Applied Physics. 50(6). 4388–4390. 2 indexed citations

18.

Johnson, N. M., R. B. Gold, A. Lietoila, & J. F. Gibbons. (1979). Deep levels in ion-implanted, CW laser-annealed silicon. AIP conference proceedings. 50. 550–555. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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