Y. I. Nissim

883 total citations
54 papers, 660 citations indexed

About

Y. I. Nissim is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Y. I. Nissim has authored 54 papers receiving a total of 660 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 19 papers in Materials Chemistry. Recurrent topics in Y. I. Nissim's work include Semiconductor materials and devices (24 papers), Thin-Film Transistor Technologies (17 papers) and Semiconductor Quantum Structures and Devices (13 papers). Y. I. Nissim is often cited by papers focused on Semiconductor materials and devices (24 papers), Thin-Film Transistor Technologies (17 papers) and Semiconductor Quantum Structures and Devices (13 papers). Y. I. Nissim collaborates with scholars based in France, United States and Israel. Y. I. Nissim's co-authors include Christian Licoppe, J. F. Gibbons, R. B. Gold, A. Lietoila, E. Rosencher, J. M. Moison, Matthias Schneider, C. Vieu, H. Launois and A. Pépin and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Y. I. Nissim

50 papers receiving 571 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Y. I. Nissim France	13	453	231	226	199	89	54	660
R. V. Knoell United States	11	492 1.1×	228 1.0×	208 0.9×	155 0.8×	44 0.5×	21	600
E. Lugujjo United States	10	360 0.8×	212 0.9×	117 0.5×	217 1.1×	85 1.0×	15	539
M. Mäenpää United States	14	378 0.8×	264 1.1×	110 0.5×	179 0.9×	53 0.6×	25	567
J.C. Oberlin France	15	400 0.9×	254 1.1×	74 0.3×	241 1.2×	132 1.5×	41	617
Kiyoshi Miyake Japan	17	520 1.1×	178 0.8×	208 0.9×	219 1.1×	79 0.9×	51	719
A. Manuaba Hungary	14	274 0.6×	95 0.4×	316 1.4×	251 1.3×	61 0.7×	48	550
D. Sigurd Sweden	16	527 1.2×	468 2.0×	160 0.7×	275 1.4×	63 0.7×	29	826
C. Nobili Italy	16	483 1.1×	309 1.3×	119 0.5×	265 1.3×	70 0.8×	38	737
C. Ascheron Germany	14	383 0.8×	186 0.8×	278 1.2×	207 1.0×	35 0.4×	46	586
G. Mezey Hungary	14	290 0.6×	110 0.5×	319 1.4×	206 1.0×	50 0.6×	50	533

Countries citing papers authored by Y. I. Nissim

Since Specialization

Citations

This map shows the geographic impact of Y. I. Nissim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. I. Nissim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. I. Nissim more than expected).

Fields of papers citing papers by Y. I. Nissim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. I. Nissim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. I. Nissim. The network helps show where Y. I. Nissim may publish in the future.

Co-authorship network of co-authors of Y. I. Nissim

This figure shows the co-authorship network connecting the top 25 collaborators of Y. I. Nissim. A scholar is included among the top collaborators of Y. I. Nissim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. I. Nissim. Y. I. Nissim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Maher, Hassan, et al.. (1999). A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications. IEEE Transactions on Electron Devices. 46(1). 32–37. 11 indexed citations

Pépin, A., C. Vieu, Matthias Schneider, et al.. (1996). GaAs/AlGaAs quantum wires fabricated by SiO2 capping-induced intermixing. Applied Physics Letters. 69(1). 61–63. 5 indexed citations

Nissim, Y. I., et al.. (1994). Integration of plasma cleaning and light-assisted CVD for the passivation of III–V semiconductor surfaces. Microelectronic Engineering. 25(2-4). 265–275. 1 indexed citations

Licoppe, Christian, Y. I. Nissim, & J. M. Moison. (1992). Surface chemistry and growth modes in the photochemical deposition of silica films. Physical review. B, Condensed matter. 45(11). 6275–6278. 4 indexed citations

Licoppe, Christian, et al.. (1991). Evidence for a transitory composition pattern in the early stages of the photochemical deposition of silica films on semiconductors. Applied Physics Letters. 59(1). 43–45. 4 indexed citations

Nissim, Y. I., et al.. (1991). Silicon epitaxial growth on GaAs using a rapid thermal chemical vapor deposition process. Applied Physics Letters. 59(6). 656–658. 3 indexed citations

Houzay, F., J. M. Moison, Christian Licoppe, & Y. I. Nissim. (1990). Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates. Vacuum. 41(1-3). 718–719. 2 indexed citations

Licoppe, Christian, et al.. (1990). A combination of rapid thermal processing and photochemical deposition for the growth of SiO2 suitable for InP device applications. Journal of Applied Physics. 68(11). 5636–5640. 13 indexed citations

Nissim, Y. I., et al.. (1990). Photo-assisted deposition of thin films on III–V semiconductors with UV and IR lamps. Applied Surface Science. 46(1-4). 175–188. 20 indexed citations

10.

Nissim, Y. I., et al.. (1989). Light Assisted CVD For Thin Dielectric Film Deposition. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1033. 273–273. 5 indexed citations

11.

Nissim, Y. I. & E. Rosencher. (1989). Heterostructures on Silicon: One Step Further with Silicon. 46 indexed citations

12.

Nissim, Y. I., et al.. (1988). Deposition of Silicon Dioxide Layers on Inp by Flash C.V.D for Misfet Applications. MRS Proceedings. 126. 3 indexed citations

13.

Licoppe, Christian, J. M. Moison, Y. I. Nissim, J.L. Regolini, & D. Bensahel. (1988). Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices. Applied Physics Letters. 53(14). 1291–1293. 13 indexed citations

14.

Nissim, Y. I., et al.. (1986). Le dépôt et la cristallisation d’une couche mince organique au moyen d’un faisceau laser. Annals of Telecommunications. 41(1-2). 74–78. 1 indexed citations

15.

Licoppe, Christian, et al.. (1986). Interface structure evolution and impurity effects during solid-phase-epitaxial growth in GaAs. Journal of Applied Physics. 60(4). 1352–1358. 17 indexed citations

16.

Sapriel, J., et al.. (1984). RAMAN VIBRATIONAL STUDIES OF TRANSIENT ANNEALING OF GaAs AMORPHOUS THIN FILMS. Le Journal de Physique Colloques. 45(C5). C5–75. 2 indexed citations

17.

Nissim, Y. I., J. Sapriel, & J Oudar. (1983). Microprobe Raman analysis of picosecond laser annealed implanted silicon. Applied Physics Letters. 42(6). 504–506. 21 indexed citations

18.

Sapriel, J. & Y. I. Nissim. (1983). Raman Vibrational Study of Pulsed Laser Annealing of Implanted GaAs. MRS Proceedings. 23. 1 indexed citations

19.

Nissim, Y. I., et al.. (1983). Annealing of High Dose Implanted GaAs with Halogen Lamps. MRS Proceedings. 23. 2 indexed citations

20.

Nissim, Y. I., A. Lietoila, R. B. Gold, & J. F. Gibbons. (1980). Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam. Journal of Applied Physics. 51(1). 274–279. 214 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact