Standout Papers

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-... 1995 2026 2005 2015 195
  1. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers (1995)
    T. W. Weeks, M. D. Bremser et al. Applied Physics Letters

Immediate Impact

25 by Nobel laureates 3 from Science/Nature 57 standout
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Citing Papers

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2 intermediate papers

Works of E.P. Carlson being referenced

Pendeoepitaxy of gallium nitride thin films
1999 Nobel
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 Nobel

Author Peers

Author Last Decade Papers Cites
E.P. Carlson 611 366 291 35 720
A. S. Usikov 627 310 353 44 720
T. W. Weeks 588 304 226 21 651
E.V. Yakovlev 581 270 234 38 661
Maosheng Hao 601 254 279 16 693
Benjamin Neuschl 596 285 343 37 733
V. Kirchner 636 232 324 20 730
Tomoyuki Tanikawa 678 275 371 77 813
E. Kohn 642 545 273 32 807
Lindsay Hussey 672 260 347 19 772
W. Van der Stricht 671 190 305 29 767

All Works

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