Standout Papers

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon 1997 2026 2006 2016 466
  1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon (1997)
    P.A. Stolk, H.‐J. Gossmann et al. Journal of Applied Physics

Immediate Impact

5 by Nobel laureates 24 from Science/Nature 60 standout
Sub-graph 1 of 25

Citing Papers

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2 intermediate papers

Works of C.S. Rafferty being referenced

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
1997 Standout

Author Peers

Author Last Decade Papers Cites
C.S. Rafferty 1652 831 483 57 1.8k
Lourdes Pelaz 1653 691 702 117 1.9k
N. E. B. Cowern 1298 781 285 66 1.4k
P.A. Stolk 2658 1254 740 67 2.9k
H. Hieslmair 1540 987 126 58 1.7k
Ray Duffy 1425 538 163 130 1.7k
J. Barbolla 1670 677 511 123 1.9k
D. Arnold 1190 477 192 32 1.5k
Michiharu Tabe 1365 736 191 99 1.6k
J.P. Kalejs 1171 391 129 90 1.5k
J.M.C. Stork 1891 757 74 48 2.0k

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