Immediate Impact

3 from Science/Nature 12 standout
Sub-graph 1 of 6

Citing Papers

Developing fatigue-resistant ferroelectrics using interlayer sliding switching
2024 StandoutScience
The future transistors
2023 StandoutNature
2 intermediate papers

Works of Arnab Biswas being referenced

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric
2016

Author Peers

Author Last Decade Papers Cites
Arnab Biswas 348 26 13 52 19 358
Kaushik Nayak 347 51 8 62 22 361
Lucian Barbut 366 22 10 103 15 375
Władysław Torbicz 228 34 4 108 17 302
Min-Feng Hung 290 59 3 54 27 300
Rich Liu 310 141 21 29 17 343
Jaeman Jang 299 98 11 80 28 333
Seong‐Wan Ryu 273 119 16 43 26 323
Tewook Bang 296 68 9 99 16 321
Kavicharan Mummaneni 304 32 2 97 34 319
Ralf Pijper 293 16 3 24 23 304

All Works

Loading papers...

Rankless by CCL
2026