Yoshihiro Ueta

510 total citations
11 papers, 434 citations indexed

About

Yoshihiro Ueta is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Yoshihiro Ueta has authored 11 papers receiving a total of 434 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Condensed Matter Physics, 7 papers in Atomic and Molecular Physics, and Optics and 4 papers in Electrical and Electronic Engineering. Recurrent topics in Yoshihiro Ueta's work include GaN-based semiconductor devices and materials (11 papers), Semiconductor Quantum Structures and Devices (7 papers) and ZnO doping and properties (3 papers). Yoshihiro Ueta is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Semiconductor Quantum Structures and Devices (7 papers) and ZnO doping and properties (3 papers). Yoshihiro Ueta collaborates with scholars based in Japan and United States. Yoshihiro Ueta's co-authors include Shiro Sakai, Takayuki Yuasa, M. Taneya, Masataka Ohta, Pablo O. Vaccaro, Yoshinobu Kawaguchi, Masaya Ishida, Naoki Wada, Tomoki Ohno and Hisao Satô and has published in prestigious journals such as Japanese Journal of Applied Physics, Journal of Crystal Growth and physica status solidi (b).

In The Last Decade

Yoshihiro Ueta

11 papers receiving 415 citations

Peers

Yoshihiro Ueta
P. Drechsel Germany
A. Weimar Germany
Rafael I. Aldaz United States
B. Yavich Brazil
P. Riblet Japan
P. Drechsel Germany
Yoshihiro Ueta
Citations per year, relative to Yoshihiro Ueta Yoshihiro Ueta (= 1×) peers P. Drechsel

Countries citing papers authored by Yoshihiro Ueta

Since Specialization
Citations

This map shows the geographic impact of Yoshihiro Ueta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yoshihiro Ueta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yoshihiro Ueta more than expected).

Fields of papers citing papers by Yoshihiro Ueta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yoshihiro Ueta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yoshihiro Ueta. The network helps show where Yoshihiro Ueta may publish in the future.

Co-authorship network of co-authors of Yoshihiro Ueta

This figure shows the co-authorship network connecting the top 25 collaborators of Yoshihiro Ueta. A scholar is included among the top collaborators of Yoshihiro Ueta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yoshihiro Ueta. Yoshihiro Ueta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

11 of 11 papers shown
1.
Ohta, Masataka, et al.. (2008). Blue Laser Diodes Fabricated onm-Plane GaN Substrates. Applied Physics Express. 1(1). 11104–11104. 41 indexed citations
2.
Ueta, Yoshihiro, et al.. (2007). High power violet laser diodes with crack‐free layers on GaN substrates. physica status solidi (a). 204(6). 2073–2076. 5 indexed citations
3.
Ohno, Tomoki, et al.. (2004). AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio. Japanese Journal of Applied Physics. 43(1). 96–99. 15 indexed citations
4.
Araki, Masahiro, et al.. (2003). Characterization of the GaN‐rich side of GaNP grown by metal‐organic chemical vapor deposition. physica status solidi (b). 240(2). 404–407. 5 indexed citations
5.
Ohno, Tomoki, et al.. (2003). AlGaInN violet laser diodes grown on GaN substrates with low aspect ratio. physica status solidi (a). 200(1). 131–134. 7 indexed citations
6.
Yuasa, Takayuki, et al.. (1999). Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN. Japanese Journal of Applied Physics. 38(7A). L703–L703. 47 indexed citations
7.
Ueta, Yoshihiro, et al.. (1994). Acceptor Binding Energy And Band Lineup Of III-V Nitride Alloys And Mocvd Growth Of GaN On GaAs - Or GaP-Coated Si. MRS Proceedings. 339. 2 indexed citations
8.
Ueta, Yoshihiro, Hisao Satô, Shiro Sakai, & Masuo Fukui. (1994). X-ray photoelectron spectroscopy study of GaN and GaP surfaces annealed in PH3 and NH3 and metalorganic chemical vapor deposition growth of GaN / GaP heterostructures. Journal of Crystal Growth. 145(1-4). 203–208. 4 indexed citations
9.
Sakai, Shiro, et al.. (1993). Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron. Japanese Journal of Applied Physics. 32(10R). 4413–4413. 302 indexed citations
10.
Ueta, Yoshihiro, Naoki Wada, Shiro Sakai, & Yoshihiro Shintani. (1992). Growth mechanism of AlGaAs on terraced substrates by low pressure MOVPE. Journal of Electronic Materials. 21(3). 355–359. 4 indexed citations
11.
Wada, Naoki, Shiro Sakai, Yoshihiro Ueta, & Koji Kawasaki. (1991). Thermal Stress in Partially Separated GaAs Layers Grown Epitaxially on Si Substrates. MRS Proceedings. 221. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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